QS6J11 is a P-channel dual MOSFET for DC/DC converter applications, housed in a TSMT6 surface-mount package. It has a drain-source voltage rating of -12 V and a continuous drain current of ±2 A. The static drain-source on-state resistance is 75 mΩ typ. at -4.5 V gate-source voltage and -2 A drain current. The device includes built-in gate-source protection diodes and is RoHS compliant. Operating junction and storage temperature range is -55°C to +150°C. Thermal resistance junction-to-ambient is 100°C/W max. on a ceramic board. The part meets RoHS standards.
Complex type MOSFETs(P+P) are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications. Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.
Complex type MOSFETs(P+P) are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications.Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.
Manufacturer: Rohm Semiconductor
Win Source Part Number: 1241319-QS6J11
Manufacturer Homepage: www.rohm.com
Popularity: Medium
Fake Threat In the Open Market: 62 pct.
Supply and Demand Status: Balance
1.5V Drive Pch+Pch MOSFET Product overview: QS6J11 from ROHM Semiconductor is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1.5V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 1.5V, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-QS6J11 can be used for catalog matching and distributor lookup.
| ROHM Semiconductor GmbH | ROHM Semiconductor USA, LLC | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | |
|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | QS6J11 | QS6J11 | 1241319-QS6J11 | 285-QS6J11 |
| Product Name | 1.5V Drive Pch+Pch MOSFET | 1.5V Drive Pch+Pch MOSFET | TRANSISTORS - Transistors - FETs, MOSFETs - RF - QS6J11 | 1.5V MOSFET Transistor |
| Polarity | P-Channel | P-Channel | ||
| V(BR)DSS | -12 volts | -12 volts | ||
| IDSS | -2000 milliamps | -2000 milliamps | ||
| PD | 1250 milliwatts | 1250 milliwatts |
