ROHM Semiconductor USA, LLC Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single R6004JNJGTL

Description
Win Source Part Number: 1201455-R6004JNJGTL Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Package: Tape & Reel Standard Package: 1,000 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Rds On (Max) @ Id, Vgs: 1.43Ohm @ 2A, 15V Vgs(th) (Max) @ Id: 7V @ 450µA Power Dissipation (Max): 60W (Tc) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: LPTS Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 100 V Vgs (Max): ±30V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 49 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Affected HTSUS: 8541.29.0095 Mfr: Rohm Semiconductor Other Names: R6004JNJGTLTR,R6004J NJGTLDKR,R6004JNJGTL CT Base Product Number: R6004 Drive Voltage (Max Rds On, Min Rds On): 15V
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Description
Win Source Part Number: 1201455-R6004JNJGTL Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Package: Tape & Reel Standard Package: 1,000 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Rds On (Max) @ Id, Vgs: 1.43Ohm @ 2A, 15V Vgs(th) (Max) @ Id: 7V @ 450µA Power Dissipation (Max): 60W (Tc) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: LPTS Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 100 V Vgs (Max): ±30V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 49 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Affected HTSUS: 8541.29.0095 Mfr: Rohm Semiconductor Other Names: R6004JNJGTLTR,R6004J NJGTLDKR,R6004JNJGTL CT Base Product Number: R6004 Drive Voltage (Max Rds On, Min Rds On): 15V
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Datasheet
Datasheet Summary
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The 1201455-R6004JNJGTL is an N-channel MOSFET designed for power applications, featuring a maximum drain-to-source voltage (Vdss) of 600V and a continuous drain current (Id) rating of 4A at a case temperature of 25¬8C. It has a low on-resistance (Rds(on)) of 1.43Oc at 2A and 15V gate voltage, which contributes to efficient operation. The device supports a maximum power dissipation of 60W and operates within a temperature range of -55¬8C to 150¬8C. Key electrical characteristics include a gate threshold voltage (Vgs(th)) of 7V at 450OºA, a total gate charge (Qg) of 10.5 nC at 15V, and an input capacitance (Ciss) of 260 pF at 100V. The MOSFET is packaged in a TO-263-3 case and is suitable for surface mount technology (SMT) applications. It is compliant with RoHS standards and features Pb-free plating. The device is also characterized by fast switching speeds and low gate drive requirements, making it suitable for various switching applications.

Datasheet Summary
Powered by GS/AI

The 1201455-R6004JNJGTL is an N-channel MOSFET designed for power applications, featuring a maximum drain-to-source voltage (Vdss) of 600V and a continuous drain current (Id) rating of 4A at a case temperature of 25¬8C. It has a low on-resistance (Rds(on)) of 1.43Oc at 2A and 15V gate voltage, which contributes to efficient operation. The device supports a maximum power dissipation of 60W and operates within a temperature range of -55¬8C to 150¬8C. Key electrical characteristics include a gate threshold voltage (Vgs(th)) of 7V at 450OºA, a total gate charge (Qg) of 10.5 nC at 15V, and an input capacitance (Ciss) of 260 pF at 100V. The MOSFET is packaged in a TO-263-3 case and is suitable for surface mount technology (SMT) applications. It is compliant with RoHS standards and features Pb-free plating. The device is also characterized by fast switching speeds and low gate drive requirements, making it suitable for various switching applications.

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Product
Description
Supplier Links
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1201455-R6004JNJGTL - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
1201455-R6004JNJGTL
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 1201455-R6004JNJGTL
Win Source Part Number: 1201455-R6004JNJGTL Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Package: Tape & Reel Standard Package: 1,000 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Rds On (Max) @ Id, Vgs: 1.43Ohm @ 2A, 15V Vgs(th) (Max) @ Id: 7V @ 450µA Power Dissipation (Max): 60W (Tc) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: LPTS Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 100 V Vgs (Max): ±30V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 49 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Affected HTSUS: 8541.29.0095 Mfr: Rohm Semiconductor Other Names: R6004JNJGTLTR,R6004J NJGTLDKR,R6004JNJGTL CT Base Product Number: R6004 Drive Voltage (Max Rds On, Min Rds On): 15V

Win Source Part Number: 1201455-R6004JNJGTL
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Package: Tape & Reel
Standard Package: 1,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 1.43Ohm @ 2A, 15V
Vgs(th) (Max) @ Id: 7V @ 450µA
Power Dissipation (Max): 60W (Tc)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: LPTS
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 100 V
Vgs (Max): ±30V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 49 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Affected
HTSUS: 8541.29.0095
Mfr: Rohm Semiconductor
Other Names: R6004JNJGTLTR,R6004JNJGTLDKR,R6004JNJGTLCT
Base Product Number: R6004
Drive Voltage (Max Rds On, Min Rds On): 15V

Buy Now Datasheet
Single FETs, MOSFETs - R6004JNJGTLTR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
R6004JNJGTLTR-ND
Single FETs, MOSFETs R6004JNJGTLTR-ND
N-Channel 600V 4A (Tc) 60W (Tc) Surface Mount LPTS

N-Channel 600V 4A (Tc) 60W (Tc) Surface Mount LPTS

Buy Now Datasheet
Single FETs, MOSFETs - R6004JNJGTLCT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
R6004JNJGTLCT-ND
Single FETs, MOSFETs R6004JNJGTLCT-ND
N-Channel 600V 4A (Tc) 60W (Tc) Surface Mount LPTS

N-Channel 600V 4A (Tc) 60W (Tc) Surface Mount LPTS

Buy Now Datasheet
Singapore
600V 4A MOSFET Transistor
278-R6004JNJGTL
600V 4A MOSFET Transistor 278-R6004JNJGTL
MOSFET N-CH 600V 4A LPTS Product overview: R6004JNJGTL from ROHM Semiconductor is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 4A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 4A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-R6004JNJGTL can be used for catalog matching and distributor lookup.

MOSFET N-CH 600V 4A LPTS Product overview: R6004JNJGTL from ROHM Semiconductor is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 4A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 4A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-R6004JNJGTL can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - R6004JNJGTL - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
R6004JNJGTL
Discrete Semiconductor Products - Transistors - FETs, MOSFETs R6004JNJGTL
MOSFET N-CH 600V 4A LPTS

MOSFET N-CH 600V 4A LPTS

Supplier's Site
Sheung Wan, Hong Kong
MOSFET NCH 600V 4A POWER

MOSFET NCH 600V 4A POWER

Buy Now Datasheet
Mosfet, N-Ch, 4A, 600V, To-263S; Transistor Polarity Rohm - 01AH7800 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 4A, 600V, To-263S; Transistor Polarity Rohm
01AH7800
Mosfet, N-Ch, 4A, 600V, To-263S; Transistor Polarity Rohm 01AH7800
MOSFET, N-CH, 4A, 600V, TO-263S; Transistor Polarity:N Channel; Continuous Drain Current Id:4A; Drain Source Voltage Vds:600V; On Resistance Rds(on):1.1ohm; Rds(on) Test Voltage Vgs:15V; Threshold Voltage Vgs:6V; Power Dissipation RoHS Compliant: Yes

MOSFET, N-CH, 4A, 600V, TO-263S; Transistor Polarity:N Channel; Continuous Drain Current Id:4A; Drain Source Voltage Vds:600V; On Resistance Rds(on):1.1ohm; Rds(on) Test Voltage Vgs:15V; Threshold Voltage Vgs:6V; Power Dissipation RoHS Compliant: Yes

Supplier's Site Datasheet

Technical Specifications

  Win Source Electronics DigiKey ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED Newark, An Avnet Company
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1201455-R6004JNJGTL R6004JNJGTLTR-ND 278-R6004JNJGTL R6004JNJGTL R6004JNJGTL 01AH7800
Product Name Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single Single FETs, MOSFETs 600V 4A MOSFET Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET Mosfet, N-Ch, 4A, 600V, To-263S; Transistor Polarity Rohm
Polarity N-Channel N-Channel N-Channel
PD 60000 milliwatts 60 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type SOT3 TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB TO-3; TO-263
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