The 1201455-R6004JNJGTL is an N-channel MOSFET designed for power applications, featuring a maximum drain-to-source voltage (Vdss) of 600V and a continuous drain current (Id) rating of 4A at a case temperature of 25¬8C. It has a low on-resistance (Rds(on)) of 1.43Oc at 2A and 15V gate voltage, which contributes to efficient operation. The device supports a maximum power dissipation of 60W and operates within a temperature range of -55¬8C to 150¬8C. Key electrical characteristics include a gate threshold voltage (Vgs(th)) of 7V at 450OºA, a total gate charge (Qg) of 10.5 nC at 15V, and an input capacitance (Ciss) of 260 pF at 100V. The MOSFET is packaged in a TO-263-3 case and is suitable for surface mount technology (SMT) applications. It is compliant with RoHS standards and features Pb-free plating. The device is also characterized by fast switching speeds and low gate drive requirements, making it suitable for various switching applications.
MOSFET N-CH 600V 4A LPTS Product overview: R6004JNJGTL from ROHM Semiconductor is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 4A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 4A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-R6004JNJGTL can be used for catalog matching and distributor lookup.
Win Source Part Number: 1201455-R6004JNJGTL
Category: Discrete Semiconductor Products>Transistors
Package: Tape & Reel
Standard Package: 1,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 1.43Ohm @ 2A, 15V
Vgs(th) (Max) @ Id: 7V @ 450µA
Power Dissipation (Max): 60W (Tc)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: LPTS
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 100 V
Vgs (Max): ±30V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 49 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Affected
HTSUS: 8541.29.0095
Mfr: Rohm Semiconductor
Other Names: R6004JNJGTLTR,R6004J
Base Product Number: R6004
Drive Voltage (Max Rds On, Min Rds On): 15V
N-Channel 600V 4A (Tc) 60W (Tc) Surface Mount LPTS
N-Channel 600V 4A (Tc) 60W (Tc) Surface Mount LPTS
MOSFET, N-CH, 4A, 600V, TO-263S; Transistor Polarity:N Channel; Continuous Drain Current Id:4A; Drain Source Voltage Vds:600V; On Resistance Rds(on):1.1ohm; Rds(on) Test Voltage Vgs:15V; Threshold Voltage Vgs:6V; Power Dissipation RoHS Compliant: Yes
MOSFET N-CH 600V 4A LPTS
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 278-R6004JNJGTL | 1201455-R6004JNJGTL | R6004JNJGTLTR-ND | 01AH7800 | R6004JNJGTL | R6004JNJGTL |
| Product Name | 600V 4A MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Single FETs, MOSFETs | Mosfet, N-Ch, 4A, 600V, To-263S; Transistor Polarity Rohm | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel | N-Channel | |||
| MOSFET Operating Mode | Enhancement | |||||
| PD | 60 milliwatts | 60000 milliwatts | ||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
