N-Channel 600V 11A (Tc) 124W (Tc) Surface Mount TO-252
N-Channel 600V 11A (Tc) 124W (Tc) Surface Mount TO-252
N-Channel 600V 11A (Tc) 124W (Tc) Surface Mount TO-252
Win Source Part Number: 972159-R6011END3TL1
Category: Discrete Semiconductor Products>Transistors
Package: Tape & Reel
Standard Package: 2,500
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 390mOhm @ 3.8A, 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 124W (Tc)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V
Vgs (Max): ±20V
Temperature Range - Operating: 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 65 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Rohm Semiconductor
Other Names: 846-R6011END3TL1TR,8
Base Product Number: R6011
Drive Voltage (Max Rds On, Min Rds On): 10V
MOSFET N-CH 600V 11A TO252 Product overview: R6011END3TL1 from ROHM Semiconductor is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 11A, TO252. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 11A, TO252, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-R6011END3TL1 can be used for catalog matching and distributor lookup.
MOSFET, N-CH, 600V, 11A, 150DEG C, 124W; Transistor Polarity:N Channel; Continuous Drain Current Id:11A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.34ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power RoHS Compliant: Yes
MOSFET NCH 600V 11A POWER MOSFET
NCH 600V 11A POWER MOSFET. POWE
MOSFET N-CH 600V 11A TO252
| DigiKey | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Utmel Electronic Limited | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Power MOSFET | RF Transistors |
| Product Number | 846-R6011END3TL1TR-ND | 972159-R6011END3TL1 | 278-R6011END3TL1 | 38AH5896 | R6011END3TL1 | 687-R6011END3TL1 | R6011END3TL1 |
| Product Name | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | 600V 11A TO252 MOSFET Transistor | Mosfet, N-Ch, 600V, 11A, 150Deg C, 124W; Transistor Polarity Rohm | MOSFET | NCH 600V 11A POWER MOSFET. POWE | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel | N-Channel | ||||
| Package Type | TO-252 (DPAK); TO-252-3, DPAK (2 Leads + Tab), SC-63 | SOT3; TO-252 (DPAK) | Tape & Reel (TR) | TO-3 | TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63 | ||
| PD | 124000 milliwatts | 124 milliwatts | 124000 milliwatts | ||||
| TJ | 150 C (302 F) | 150 C (302 F) | 150 C (302 F) | ||||
| MOSFET Operating Mode | Enhancement |