ROHM Semiconductor USA, LLC Single FETs, MOSFETs R6011END3TL1

Description
N-Channel 600V 11A (Tc) 124W (Tc) Surface Mount TO-252
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Description
N-Channel 600V 11A (Tc) 124W (Tc) Surface Mount TO-252
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - 846-R6011END3TL1TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
846-R6011END3TL1TR-ND
Single FETs, MOSFETs 846-R6011END3TL1TR-ND
N-Channel 600V 11A (Tc) 124W (Tc) Surface Mount TO-252

N-Channel 600V 11A (Tc) 124W (Tc) Surface Mount TO-252

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Single FETs, MOSFETs - 846-R6011END3TL1CT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
846-R6011END3TL1CT-ND
Single FETs, MOSFETs 846-R6011END3TL1CT-ND
N-Channel 600V 11A (Tc) 124W (Tc) Surface Mount TO-252

N-Channel 600V 11A (Tc) 124W (Tc) Surface Mount TO-252

Buy Now Datasheet
Single FETs, MOSFETs - 846-R6011END3TL1DKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
846-R6011END3TL1DKR-ND
Single FETs, MOSFETs 846-R6011END3TL1DKR-ND
N-Channel 600V 11A (Tc) 124W (Tc) Surface Mount TO-252

N-Channel 600V 11A (Tc) 124W (Tc) Surface Mount TO-252

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 972159-R6011END3TL1 - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
972159-R6011END3TL1
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 972159-R6011END3TL1
Win Source Part Number: 972159-R6011END3TL1 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Package: Tape & Reel Standard Package: 2,500 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 390mOhm @ 3.8A, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Power Dissipation (Max): 124W (Tc) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: TO-252 Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V Vgs (Max): ±20V Temperature Range - Operating: 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 65 pct. MSL Level: 1 (Unlimited) HTSUS: 8541.29.0095 Mfr: Rohm Semiconductor Other Names: 846-R6011END3TL1TR,8 46-R6011END3TL1DKR,8 46-R6011END3TL1CT Base Product Number: R6011 Drive Voltage (Max Rds On, Min Rds On): 10V

Win Source Part Number: 972159-R6011END3TL1
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Package: Tape & Reel
Standard Package: 2,500
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 390mOhm @ 3.8A, 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 124W (Tc)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V
Vgs (Max): ±20V
Temperature Range - Operating: 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 65 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Rohm Semiconductor
Other Names: 846-R6011END3TL1TR,846-R6011END3TL1DKR,846-R6011END3TL1CT
Base Product Number: R6011
Drive Voltage (Max Rds On, Min Rds On): 10V

Buy Now Datasheet
Singapore
600V 11A TO252 MOSFET Transistor
278-R6011END3TL1
600V 11A TO252 MOSFET Transistor 278-R6011END3TL1
MOSFET N-CH 600V 11A TO252 Product overview: R6011END3TL1 from ROHM Semiconductor is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 11A, TO252. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 11A, TO252, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-R6011END3TL1 can be used for catalog matching and distributor lookup.

MOSFET N-CH 600V 11A TO252 Product overview: R6011END3TL1 from ROHM Semiconductor is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 11A, TO252. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 11A, TO252, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-R6011END3TL1 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Mosfet, N-Ch, 600V, 11A, 150Deg C, 124W; Transistor Polarity Rohm - 38AH5896 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 600V, 11A, 150Deg C, 124W; Transistor Polarity Rohm
38AH5896
Mosfet, N-Ch, 600V, 11A, 150Deg C, 124W; Transistor Polarity Rohm 38AH5896
MOSFET, N-CH, 600V, 11A, 150DEG C, 124W; Transistor Polarity:N Channel; Continuous Drain Current Id:11A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.34ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power RoHS Compliant: Yes

MOSFET, N-CH, 600V, 11A, 150DEG C, 124W; Transistor Polarity:N Channel; Continuous Drain Current Id:11A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.34ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power RoHS Compliant: Yes

Supplier's Site Datasheet
Sheung Wan, Hong Kong
MOSFET NCH 600V 11A POWER MOSFET

MOSFET NCH 600V 11A POWER MOSFET

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NCH 600V 11A POWER MOSFET. POWE - 687-R6011END3TL1 - Utmel Electronic Limited
Hong Kong, China
NCH 600V 11A POWER MOSFET. POWE
687-R6011END3TL1
NCH 600V 11A POWER MOSFET. POWE 687-R6011END3TL1
NCH 600V 11A POWER MOSFET. POWE

NCH 600V 11A POWER MOSFET. POWE

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - R6011END3TL1 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
R6011END3TL1
Discrete Semiconductor Products - Transistors - FETs, MOSFETs R6011END3TL1
MOSFET N-CH 600V 11A TO252

MOSFET N-CH 600V 11A TO252

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics ERSAELECTRONICS PTE. LTD. Newark, An Avnet Company VAST STOCK CO., LIMITED Utmel Electronic Limited Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Power MOSFET RF Transistors
Product Number 846-R6011END3TL1TR-ND 972159-R6011END3TL1 278-R6011END3TL1 38AH5896 R6011END3TL1 687-R6011END3TL1 R6011END3TL1
Product Name Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 600V 11A TO252 MOSFET Transistor Mosfet, N-Ch, 600V, 11A, 150Deg C, 124W; Transistor Polarity Rohm MOSFET NCH 600V 11A POWER MOSFET. POWE Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel N-Channel
Package Type TO-252 (DPAK); TO-252-3, DPAK (2 Leads + Tab), SC-63 SOT3; TO-252 (DPAK) Tape & Reel (TR) TO-3 TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63
PD 124000 milliwatts 124 milliwatts 124000 milliwatts
TJ 150 C (302 F) 150 C (302 F) 150 C (302 F)
MOSFET Operating Mode Enhancement
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