MOSFET, one of Fild Effect Transistors. ROHM has low current type power MOSFETs of high-efficiency / high breakdown resistance for switching power supply to meet various needs in the market.
N-Channel 600V 20A (Ta) 50W (Tc) Through Hole TO-220FM
MOSFET N-CH 600V 20A TO220FM Product overview: R6020ANX from ROHM Semiconductor is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 20A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 20A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-R6020ANX can be used for catalog matching and distributor lookup.
MOSFET N-CH 600V 20A TO220FM
Manufacturer: Rohm Semiconductor
Win Source Part Number: 1091367-R6020ANX
Packaging: Bulk
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 50W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Not For New Designs
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-220FM
Dimension: TO-220-2 Full Pack
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 20A (Ta)
Gate-Source Threshold Voltage: 4.5V @ 1mA
Max Gate Charge: 65nC @ 10V
Max Input Capacitance: 2040pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 220 mOhm @ 10A, 10V
Popularity: Medium
Fake Threat In the Open Market: 31 pct.
Supply and Demand Status: Balance
MOSFET N-CH 600V 20A TO220FM
| ROHM Semiconductor USA, LLC | DigiKey | ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | R6020ANX | R6020ANX-ND | 278-R6020ANX | R6020ANX | 1091367-R6020ANX | R6020ANX | R6020ANX |
| Product Name | 10V Drive Nch MOSFET | Single FETs, MOSFETs | 600V 20A MOSFET Transistor | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - R6020ANX | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel; N-Channel | |||
| V(BR)DSS | 600 volts | 600 volts | 600 volts | ||||
| IDSS | 20000 milliamps | 20000 milliamps | |||||
| PD | 50000 milliwatts | 85000 milliwatts | 85000 milliwatts | 50000 milliwatts |
