The QS5U12 is a 30V N-channel MOSFET with an integrated Schottky barrier diode in a TSMT5 package, designed for load switching and DC/DC conversion applications. It supports a continuous drain current of ±2.0A and has a maximum on-state resistance of 154mΩ at 2.5V gate drive. The device features low-voltage operation (2.5V drive), a body diode forward voltage of 1.2V, and a Schottky diode with a reverse voltage rating of 20V and forward voltage of 0.45V. It complies with RoHS standards and has a maximum power dissipation of 1.25W. The operating junction temperature range is -55°C to +150°C.
ROHM MOSFETs are made as low RDS(on) resistance devices utilizing the micro-processing technologies and available in wide lineup including hybrid types (MOSFET + Schottky Barrier Diode) to meet various needs in the market.
ROHM MOSFETs are made as low RDS(on) resistance devices utilizing the micro-processing technologies and available in wide lineup including hybrid types (MOSFET + Schottky Barrier Diode) to meet various needs in the market.
| ROHM Semiconductor GmbH | ROHM Semiconductor USA, LLC | |
|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | QS5U12 | QS5U12 |
| Product Name | 2.5V Drive Nch+SBD MOSFET | 2.5V Drive Nch+SBD MOSFET |
| Polarity | N-Channel | N-Channel |
| V(BR)DSS | 30 volts | 30 volts |
| IDSS | 2000 milliamps | 2000 milliamps |
| PD | 900 milliwatts | 900 milliwatts |
