Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications.Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.
MOSFET N-CH 600V 12A TO220FM Product overview: R6012FNX from ROHM Semiconductor is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 12A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 12A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-R6012FNX can be used for catalog matching and distributor lookup.
Manufacturer: Rohm Semiconductor
Win Source Part Number: 1091363-R6012FNX
Packaging: Bulk
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 50W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-220FM
Dimension: TO-220-2 Full Pack
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 12A (Tc)
Gate-Source Threshold Voltage: 5V @ 1mA
Max Gate Charge: 35nC @ 10V
Max Input Capacitance: 1300pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 510 mOhm @ 6A, 10V
Popularity: Medium
Fake Threat In the Open Market: 67 pct.
Supply and Demand Status: Balance
N-Channel 600V 12A (Tc) 50W (Tc) Through Hole TO-220FM
MOSFET N-CH 600V 12A TO220FM
MOSFET Trans MOSFET N-CH 600V 12A
MOSFET, N-CH, 600V, 12A, TO-220FM-3; Transistor Polarity:N Channel; Continuous Drain Current Id:12A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.39ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V; Power RoHS Compliant: Yes
| ROHM Semiconductor USA, LLC | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | R6012FNX | 278-R6012FNX | 1091363-R6012FNX | R6012FNX-ND | R6012FNX | R6012FNX | 10AC9007 |
| Product Name | 10V Drive Nch MOSFET | 600V 12A MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - R6012FNX | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Mosfet, N-Ch, 600V, 12A, To-220Fm-3; Transistor Polarity Rohm |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | |||
| V(BR)DSS | 600 volts | 600 volts | |||||
| IDSS | 12000 milliamps | 12000 milliamps | |||||
| PD | 50000 milliwatts | 50 milliwatts | 50000 milliwatts | ||||
| TJ | -55 to 150 C (-67 to 302 F) | 150 C (302 F) | 150 C (302 F) |
