The EM6K33 is a dual N-channel MOSFET in an EMT6 package designed for low-voltage switching applications with 1.2V drive capability. It has a 50V drain-source voltage rating, ±200mA continuous drain current, and a maximum total power dissipation of 150mW. The device exhibits a maximum on-state resistance of 7.2Ω at 1.2V gate-source voltage and 20mA drain current. It operates across a junction temperature range of -55°C to +150°C and is packaged in an 8mm tape reel with 8000 pieces per reel. The package is SOT-563 (EMT6).
Complex type MOSFETs(N+N) are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications. Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.
Complex type MOSFETs(N+N) are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications.Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.
| ROHM Semiconductor GmbH | ROHM Semiconductor USA, LLC | |
|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | EM6K33 | EM6K33 |
| Product Name | 1.2V Drive Nch+Nch MOSFET | 1.2V Drive Nch+Nch MOSFET |
| Polarity | N-Channel | N-Channel |
| V(BR)DSS | 50 volts | 50 volts |
| IDSS | 200 milliamps | 200 milliamps |
| PD | 150 milliwatts | 150 milliwatts |
