The ES6U42 is a 2.5V drive P-channel MOSFET combined with a Schottky barrier diode, designed for applications requiring low on-resistance and high-speed switching. It features a maximum drain-source voltage of -20V and a continuous drain current rating of ¬±1.0A, with a maximum on-resistance of 390mOc. The device is housed in a compact SOT-563T package, making it suitable for space-constrained designs. The integrated Schottky diode has a forward voltage drop of approximately -1.2V and supports a forward current of up to 0.5A. The product operates within a junction temperature range of -55¬8C to +150¬8C, ensuring reliability in various environmental conditions. This MOSFET is particularly advantageous for low-voltage applications, providing efficient performance in power management circuits.
ROHM MOSFETs are made as low RDS(on) resistance devices utilizing the micro-processing technologies and available in wide lineup including hybrid types (MOSFET + Schottky Barrier Diode) to meet various needs in the market.
MOSFET P-CH 20V 1A WEMT6 Product overview: ES6U42 from ROHM Semiconductor is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 1A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 1A, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-ES6U42 can be used for catalog matching and distributor lookup.
Manufacturer: Rohm Semiconductor
Win Source Part Number: 24329-ES6U42
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
FET Feature: Schottky Diode (Body)
Polarity: P-Channel
Power Dissipation (Max): 700mW (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: 6-WEMT
Dimension: SOT-563, SOT-666
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 1A (Ta)
Gate-Source Threshold Voltage: 2V @ 1mA
Max Gate Charge: 2.1nC @ 4.5V
Max Input Capacitance: 150pF @ 10V
Maximum Gate-Source Voltage: ±12V
Maximum Rds On at Id,Vgs: 390 mOhm @ 1A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 54 pct.
Supply and Demand Status: Sufficient
| ROHM Semiconductor USA, LLC | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | |
|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | ES6U42 | 285-ES6U42 | 24329-ES6U42 |
| Product Name | 2.5V Drive Pch+SBD MOSFET | 20V 1A MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - ES6U42 |
| Polarity | P-Channel | P-Channel | P-Channel; P-Channel |
| V(BR)DSS | -20 volts | 20 volts | |
| IDSS | -1000 milliamps | ||
| PD | 700 milliwatts | 700 milliwatts | 700 milliwatts |
