The EM6J1 is a dual P-channel MOSFET in an SOT-563 package designed for low-voltage switching applications with 1.2V drive capability. It has a drain-source voltage rating of -20 V and a continuous drain current of ±200 mA. The device features a maximum on-state resistance of 1.2 Ω at -4.5 V gate-source voltage and includes built-in gate-source protection diodes. Total power dissipation is 150 mW with a junction temperature range of -55 °C to +150 °C. The package is surface-mount and tape-reel packed with an 180 mm reel size and 8 mm tape width, ordered in units of 8000 pieces. It meets no stated industry qualifications beyond standard semiconductor operating limits.
Complex type MOSFETs(P+P) are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications. Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.
Complex type MOSFETs(P+P) are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications.Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.
| ROHM Semiconductor GmbH | ROHM Semiconductor USA, LLC | |
|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | EM6J1 | EM6J1 |
| Product Name | 1.2V Drive Pch+Pch MOSFET | 1.2V Drive Pch+Pch MOSFET |
| Polarity | P-Channel | P-Channel |
| V(BR)DSS | -20 volts | -20 volts |
| IDSS | -200 milliamps | -200 milliamps |
| PD | 150 milliwatts | 150 milliwatts |
