The QS8K21 is a 45V N-channel + N-channel dual MOSFET in a TSMT8 surface-mount package, designed for switching applications. It has a continuous drain current rating of ±4A, a maximum on-resistance of 53mΩ at 10V gate-source voltage, and a power dissipation of 1.5W. The device includes built-in gate-source protection diodes and is RoHS compliant. Thermal resistance junction-to-ambient is 83.3°C/W when mounted on a ceramic board. Junction temperature ranges from -55°C to +150°C. The part meets RoHS standards and is packaged in an 180mm tape reel with a 3000-piece unit quantity.
Complex type MOSFETs(N+N) are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications. Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.
Complex type MOSFETs(N+N) are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications.Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.
| ROHM Semiconductor GmbH | ROHM Semiconductor USA, LLC | |
|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | QS8K21 | QS8K21 |
| Product Name | 4V Drive Nch+Nch MOSFET | 4V Drive Nch+Nch MOSFET |
| Polarity | N-Channel | N-Channel |
| V(BR)DSS | 45 volts | 45 volts |
| IDSS | 4000 milliamps | 4000 milliamps |
| PD | 1500 milliwatts | 1500 milliwatts |
