The QS5U34 is a combined N-channel MOSFET and Schottky barrier diode in a TSMT5 package, designed for load switching and DC/DC conversion. It features a 20 V drain-source voltage rating, 1.5 A continuous drain current, and 1.8 V gate drive capability. The MOSFET has a drain-source on-state resistance of 220 mΩ max at VGS = 1.8 V and ID = 0.8 A. The integrated Schottky diode has a forward voltage of 0.47 V max at IF = 0.5 A and a reverse voltage rating of 20 V. Total power dissipation is 1.25 W, and the device operates with a junction temperature up to 150 °C. The package dimensions are 1.0 mm maximum height, with a footprint of 6.1 mm by 2.9 mm. The part is rated for storage temperatures from -55 °C to +150 °C and meets RoHS standards.
ROHM MOSFETs are made as low RDS(on) resistance devices utilizing the micro-processing technologies and available in wide lineup including hybrid types (MOSFET + Schottky Barrier Diode) to meet various needs in the market.
ROHM MOSFETs are made as low RDS(on) resistance devices utilizing the micro-processing technologies and available in wide lineup including hybrid types (MOSFET + Schottky Barrier Diode) to meet various needs in the market.
1.8V Drive Nch+SBD MOSFET Product overview: QS5U34 from ROHM Semiconductor is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1.8V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 1.8V, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-QS5U34 can be used for catalog matching and distributor lookup.
Manufacturer: Rohm Semiconductor
Win Source Part Number: 1241317-QS5U34
Manufacturer Homepage: www.rohm.com
Popularity: Medium
Fake Threat In the Open Market: 29 pct.
Supply and Demand Status: Balance
| ROHM Semiconductor GmbH | ROHM Semiconductor USA, LLC | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | |
|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | QS5U34 | QS5U34 | 285-QS5U34 | 1241317-QS5U34 |
| Product Name | 1.8V Drive Nch+SBD MOSFET | 1.8V Drive Nch+SBD MOSFET | 1.8V MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - QS5U34 |
| Polarity | N-Channel | N-Channel | ||
| V(BR)DSS | 20 volts | 20 volts | ||
| IDSS | 1500 milliamps | 1500 milliamps | ||
| PD | 900 milliwatts | 900 milliwatts |
