ROHM Semiconductor USA, LLC Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single R6006JNJGTL

Description
Win Source Part Number: 1201365-R6006JNJGTL Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Package: Tape & Reel Standard Package: 1,000 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Rds On (Max) @ Id, Vgs: 936mOhm @ 3A, 15V Vgs(th) (Max) @ Id: 7V @ 800µA Power Dissipation (Max): 86W (Tc) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: LPTS Gate Charge (Qg) (Max) @ Vgs: 15.5 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 410 pF @ 100 V Vgs (Max): ±30V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 63 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Affected HTSUS: 8541.29.0095 Mfr: Rohm Semiconductor Other Names: R6006JNJGTLTR,R6006J NJGTLCT,R6006JNJGTLD KR Base Product Number: R6006 Drive Voltage (Max Rds On, Min Rds On): 15V
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1201365-R6006JNJGTL - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - R6006JNJGTLTR-ND - DigiKey
    DigiKey
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - R6006JNJGTL - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • Mosfet, N-Ch, 6A, 600V, To-263S; Transistor Polarity Rohm - 01AH7803 - Newark, An Avnet Company
    Newark, An Avnet Company
Request a Quote Datasheet
Description
Win Source Part Number: 1201365-R6006JNJGTL Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Package: Tape & Reel Standard Package: 1,000 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Rds On (Max) @ Id, Vgs: 936mOhm @ 3A, 15V Vgs(th) (Max) @ Id: 7V @ 800µA Power Dissipation (Max): 86W (Tc) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: LPTS Gate Charge (Qg) (Max) @ Vgs: 15.5 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 410 pF @ 100 V Vgs (Max): ±30V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 63 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Affected HTSUS: 8541.29.0095 Mfr: Rohm Semiconductor Other Names: R6006JNJGTLTR,R6006J NJGTLCT,R6006JNJGTLD KR Base Product Number: R6006 Drive Voltage (Max Rds On, Min Rds On): 15V
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1201365-R6006JNJGTL - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
1201365-R6006JNJGTL
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 1201365-R6006JNJGTL
Win Source Part Number: 1201365-R6006JNJGTL Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Package: Tape & Reel Standard Package: 1,000 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Rds On (Max) @ Id, Vgs: 936mOhm @ 3A, 15V Vgs(th) (Max) @ Id: 7V @ 800µA Power Dissipation (Max): 86W (Tc) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: LPTS Gate Charge (Qg) (Max) @ Vgs: 15.5 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 410 pF @ 100 V Vgs (Max): ±30V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 63 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Affected HTSUS: 8541.29.0095 Mfr: Rohm Semiconductor Other Names: R6006JNJGTLTR,R6006J NJGTLCT,R6006JNJGTLD KR Base Product Number: R6006 Drive Voltage (Max Rds On, Min Rds On): 15V

Win Source Part Number: 1201365-R6006JNJGTL
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Package: Tape & Reel
Standard Package: 1,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 936mOhm @ 3A, 15V
Vgs(th) (Max) @ Id: 7V @ 800µA
Power Dissipation (Max): 86W (Tc)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: LPTS
Gate Charge (Qg) (Max) @ Vgs: 15.5 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 410 pF @ 100 V
Vgs (Max): ±30V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 63 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Affected
HTSUS: 8541.29.0095
Mfr: Rohm Semiconductor
Other Names: R6006JNJGTLTR,R6006JNJGTLCT,R6006JNJGTLDKR
Base Product Number: R6006
Drive Voltage (Max Rds On, Min Rds On): 15V

Buy Now Datasheet
Single FETs, MOSFETs - R6006JNJGTLTR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
R6006JNJGTLTR-ND
Single FETs, MOSFETs R6006JNJGTLTR-ND
N-Channel 600V 6A (Tc) 86W (Tc) Surface Mount LPTS

N-Channel 600V 6A (Tc) 86W (Tc) Surface Mount LPTS

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - R6006JNJGTL - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
R6006JNJGTL
Discrete Semiconductor Products - Transistors - FETs, MOSFETs R6006JNJGTL
MOSFET N-CH 600V 6A LPTS

MOSFET N-CH 600V 6A LPTS

Supplier's Site
Mosfet, N-Ch, 6A, 600V, To-263S; Transistor Polarity Rohm - 01AH7803 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 6A, 600V, To-263S; Transistor Polarity Rohm
01AH7803
Mosfet, N-Ch, 6A, 600V, To-263S; Transistor Polarity Rohm 01AH7803
MOSFET, N-CH, 6A, 600V, TO-263S; Transistor Polarity:N Channel; Continuous Drain Current Id:6A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.72ohm; Rds(on) Test Voltage Vgs:15V; Threshold Voltage Vgs:6V; Power Dissipation RoHS Compliant: Yes

MOSFET, N-CH, 6A, 600V, TO-263S; Transistor Polarity:N Channel; Continuous Drain Current Id:6A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.72ohm; Rds(on) Test Voltage Vgs:15V; Threshold Voltage Vgs:6V; Power Dissipation RoHS Compliant: Yes

Supplier's Site Datasheet
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
R6006JNJGTL
MOSFET R6006JNJGTL
MOSFET NCH 600V 6A POWER

MOSFET NCH 600V 6A POWER

Buy Now Datasheet

Technical Specifications

  Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1201365-R6006JNJGTL R6006JNJGTLTR-ND R6006JNJGTL 01AH7803 R6006JNJGTL
Product Name Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs Mosfet, N-Ch, 6A, 600V, To-263S; Transistor Polarity Rohm MOSFET
Polarity N-Channel N-Channel
PD 86000 milliwatts
TJ -55 to 150 C (-67 to 302 F)
Package Type SOT3 TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB TO-3; TO-263
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