ROHM Semiconductor USA, LLC Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single R6006JNJGTL

Description
Win Source Part Number: 1201365-R6006JNJGTL Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Package: Tape & Reel Standard Package: 1,000 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Rds On (Max) @ Id, Vgs: 936mOhm @ 3A, 15V Vgs(th) (Max) @ Id: 7V @ 800µA Power Dissipation (Max): 86W (Tc) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: LPTS Gate Charge (Qg) (Max) @ Vgs: 15.5 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 410 pF @ 100 V Vgs (Max): ±30V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 63 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Affected HTSUS: 8541.29.0095 Mfr: Rohm Semiconductor Other Names: R6006JNJGTLTR,R6006J NJGTLCT,R6006JNJGTLD KR Base Product Number: R6006 Drive Voltage (Max Rds On, Min Rds On): 15V
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Description
Win Source Part Number: 1201365-R6006JNJGTL Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Package: Tape & Reel Standard Package: 1,000 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Rds On (Max) @ Id, Vgs: 936mOhm @ 3A, 15V Vgs(th) (Max) @ Id: 7V @ 800µA Power Dissipation (Max): 86W (Tc) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: LPTS Gate Charge (Qg) (Max) @ Vgs: 15.5 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 410 pF @ 100 V Vgs (Max): ±30V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 63 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Affected HTSUS: 8541.29.0095 Mfr: Rohm Semiconductor Other Names: R6006JNJGTLTR,R6006J NJGTLCT,R6006JNJGTLD KR Base Product Number: R6006 Drive Voltage (Max Rds On, Min Rds On): 15V
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Suppliers

Company
Product
Description
Supplier Links
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1201365-R6006JNJGTL - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
1201365-R6006JNJGTL
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 1201365-R6006JNJGTL
Win Source Part Number: 1201365-R6006JNJGTL Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Package: Tape & Reel Standard Package: 1,000 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Rds On (Max) @ Id, Vgs: 936mOhm @ 3A, 15V Vgs(th) (Max) @ Id: 7V @ 800µA Power Dissipation (Max): 86W (Tc) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: LPTS Gate Charge (Qg) (Max) @ Vgs: 15.5 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 410 pF @ 100 V Vgs (Max): ±30V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 63 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Affected HTSUS: 8541.29.0095 Mfr: Rohm Semiconductor Other Names: R6006JNJGTLTR,R6006J NJGTLCT,R6006JNJGTLD KR Base Product Number: R6006 Drive Voltage (Max Rds On, Min Rds On): 15V

Win Source Part Number: 1201365-R6006JNJGTL
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Package: Tape & Reel
Standard Package: 1,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 936mOhm @ 3A, 15V
Vgs(th) (Max) @ Id: 7V @ 800µA
Power Dissipation (Max): 86W (Tc)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: LPTS
Gate Charge (Qg) (Max) @ Vgs: 15.5 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 410 pF @ 100 V
Vgs (Max): ±30V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 63 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Affected
HTSUS: 8541.29.0095
Mfr: Rohm Semiconductor
Other Names: R6006JNJGTLTR,R6006JNJGTLCT,R6006JNJGTLDKR
Base Product Number: R6006
Drive Voltage (Max Rds On, Min Rds On): 15V

Buy Now Datasheet
Single FETs, MOSFETs - R6006JNJGTLTR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
R6006JNJGTLTR-ND
Single FETs, MOSFETs R6006JNJGTLTR-ND
N-Channel 600V 6A (Tc) 86W (Tc) Surface Mount LPTS

N-Channel 600V 6A (Tc) 86W (Tc) Surface Mount LPTS

Buy Now Datasheet
Sheung Wan, Hong Kong
MOSFET NCH 600V 6A POWER

MOSFET NCH 600V 6A POWER

Buy Now Datasheet
Mosfet, N-Ch, 6A, 600V, To-263S; Transistor Polarity Rohm - 01AH7803 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 6A, 600V, To-263S; Transistor Polarity Rohm
01AH7803
Mosfet, N-Ch, 6A, 600V, To-263S; Transistor Polarity Rohm 01AH7803
MOSFET, N-CH, 6A, 600V, TO-263S; Transistor Polarity:N Channel; Continuous Drain Current Id:6A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.72ohm; Rds(on) Test Voltage Vgs:15V; Threshold Voltage Vgs:6V; Power Dissipation RoHS Compliant: Yes

MOSFET, N-CH, 6A, 600V, TO-263S; Transistor Polarity:N Channel; Continuous Drain Current Id:6A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.72ohm; Rds(on) Test Voltage Vgs:15V; Threshold Voltage Vgs:6V; Power Dissipation RoHS Compliant: Yes

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - R6006JNJGTL - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
R6006JNJGTL
Discrete Semiconductor Products - Transistors - FETs, MOSFETs R6006JNJGTL
MOSFET N-CH 600V 6A LPTS

MOSFET N-CH 600V 6A LPTS

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey VAST STOCK CO., LIMITED Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 1201365-R6006JNJGTL R6006JNJGTLTR-ND R6006JNJGTL 01AH7803 R6006JNJGTL
Product Name Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single Single FETs, MOSFETs MOSFET Mosfet, N-Ch, 6A, 600V, To-263S; Transistor Polarity Rohm Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel
PD 86000 milliwatts
TJ -55 to 150 C (-67 to 302 F)
Package Type SOT3 TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB TO-3; TO-263 TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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4 suppliers