ROHM Semiconductor USA, LLC TRANSISTORS - Transistors - FETs, MOSFETs - RF - R6006ANDTL R6006ANDTL

Description
Manufacturer: Rohm Semiconductor Win Source Part Number: 1091355-R6006ANDTL Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 40W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Not For New Designs Temperature Range - Operating: 150°C (TJ) Case / Package: CPT3 Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 6A (Tc) Gate-Source Threshold Voltage: 4.5V @ 1mA Max Gate Charge: 15nC @ 10V Max Input Capacitance: 460pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 1.2 Ohm @ 3A, 10V Alternative Parts (Cross-Reference): IPD60R1K4C6; STD5NM60; TSM60NB1R4CP ROG; Popularity: Medium Fake Threat In the Open Market: 64 pct. Supply and Demand Status: Balance
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Description
Manufacturer: Rohm Semiconductor Win Source Part Number: 1091355-R6006ANDTL Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 40W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Not For New Designs Temperature Range - Operating: 150°C (TJ) Case / Package: CPT3 Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 6A (Tc) Gate-Source Threshold Voltage: 4.5V @ 1mA Max Gate Charge: 15nC @ 10V Max Input Capacitance: 460pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 1.2 Ohm @ 3A, 10V Alternative Parts (Cross-Reference): IPD60R1K4C6; STD5NM60; TSM60NB1R4CP ROG; Popularity: Medium Fake Threat In the Open Market: 64 pct. Supply and Demand Status: Balance
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Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - R6006ANDTL - 1091355-R6006ANDTL - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - R6006ANDTL
1091355-R6006ANDTL
TRANSISTORS - Transistors - FETs, MOSFETs - RF - R6006ANDTL 1091355-R6006ANDTL
Manufacturer: Rohm Semiconductor Win Source Part Number: 1091355-R6006ANDTL Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 40W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Not For New Designs Temperature Range - Operating: 150°C (TJ) Case / Package: CPT3 Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 6A (Tc) Gate-Source Threshold Voltage: 4.5V @ 1mA Max Gate Charge: 15nC @ 10V Max Input Capacitance: 460pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 1.2 Ohm @ 3A, 10V Alternative Parts (Cross-Reference): IPD60R1K4C6; STD5NM60; TSM60NB1R4CP ROG; Popularity: Medium Fake Threat In the Open Market: 64 pct. Supply and Demand Status: Balance

Manufacturer: Rohm Semiconductor
Win Source Part Number: 1091355-R6006ANDTL
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 40W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Not For New Designs
Temperature Range - Operating: 150°C (TJ)
Case / Package: CPT3
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 6A (Tc)
Gate-Source Threshold Voltage: 4.5V @ 1mA
Max Gate Charge: 15nC @ 10V
Max Input Capacitance: 460pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 1.2 Ohm @ 3A, 10V
Alternative Parts (Cross-Reference): IPD60R1K4C6; STD5NM60; TSM60NB1R4CP ROG;
Popularity: Medium
Fake Threat In the Open Market: 64 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Single FETs, MOSFETs - 846-R6006ANDTLTR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
846-R6006ANDTLTR-ND
Single FETs, MOSFETs 846-R6006ANDTLTR-ND
MOSFET N-CH 600V 6A CPT

MOSFET N-CH 600V 6A CPT

Buy Now Datasheet
Singapore
600V 6A MOSFET Transistor
278-R6006ANDTL
600V 6A MOSFET Transistor 278-R6006ANDTL
MOSFET N-CH 600V 6A CPT Product overview: R6006ANDTL from ROHM Semiconductor is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 6A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 6A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-R6006ANDTL can be used for catalog matching and distributor lookup.

MOSFET N-CH 600V 6A CPT Product overview: R6006ANDTL from ROHM Semiconductor is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 6A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 6A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-R6006ANDTL can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - R6006ANDTL - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
R6006ANDTL
Discrete Semiconductor Products - Transistors - FETs, MOSFETs R6006ANDTL
MOSFET N-CH 600V 6A CPT

MOSFET N-CH 600V 6A CPT

Supplier's Site
Sheung Wan, Hong Kong
MOSFET LO CURR HI EFF MOSFT HI BREAKDWN RESIST

MOSFET LO CURR HI EFF MOSFT HI BREAKDWN RESIST

Buy Now Datasheet

Technical Specifications

  Win Source Electronics DigiKey ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1091355-R6006ANDTL 846-R6006ANDTLTR-ND 278-R6006ANDTL R6006ANDTL R6006ANDTL
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - R6006ANDTL Single FETs, MOSFETs 600V 6A MOSFET Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel; N-Channel N-Channel N-Channel
V(BR)DSS 600 volts
PD 40000 milliwatts 40 milliwatts
TJ 150 C (302 F) 150 C (302 F)
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