R6024ENZ is an N-channel 600V 24A power MOSFET in a TO-3PF package, designed for switching applications with low on-resistance and fast switching. It has a maximum drain-source voltage of 600 V, continuous drain current of ±24 A at 25°C, and on-resistance of up to 0.165 Ω at 25°C. The device supports a peak pulsed drain current of ±72 A and has a maximum power dissipation of 120 W. Gate-source voltage is rated at ±20 V, with junction and storage temperatures ranging from -55°C to 150°C. The package meets RoHS compliance and features avalanche energy ratings of 497 mJ for single pulse and 0.75 mJ for repetitive operation. Thermal resistance from junction to case is 1.04°C/W and from junction to ambient is 40°C/W.
R6024ENZ is a power MOSFET with low ON-resistance and fast switching, suitable for the switching application.
Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications.Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.
| ROHM Semiconductor GmbH | ROHM Semiconductor USA, LLC | |
|---|---|---|
| Product Category | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | R6024ENZ | R6024ENZ |
| Product Name | 600V 24A TO-3PF, Low-noise Power MOSFET | 10V Drive Nch MOSFET |
| Polarity | N-Channel | N-Channel |
| V(BR)DSS | 600 volts | 600 volts |
| IDSS | 24000 milliamps | 24000 milliamps |
| QG | 70 nC | |
| PD | 120000 milliwatts | 120000 milliwatts |
