ROHM Semiconductor USA, LLC 10V Drive Nch MOSFET R5009ANX

Description
MOSFET, one of Fild Effect Transistors. ROHM has low current type power MOSFETs of high-efficiency / high breakdown resistance for switching power supply to meet various needs in the market.
Request a Quote Datasheet
Description
MOSFET, one of Fild Effect Transistors. ROHM has low current type power MOSFETs of high-efficiency / high breakdown resistance for switching power supply to meet various needs in the market.
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
10V Drive Nch MOSFET - R5009ANX - ROHM Semiconductor USA, LLC
Santa Clara, CA, USA
10V Drive Nch MOSFET
R5009ANX
10V Drive Nch MOSFET R5009ANX
MOSFET, one of Fild Effect Transistors. ROHM has low current type power MOSFETs of high-efficiency / high breakdown resistance for switching power supply to meet various needs in the market.

MOSFET, one of Fild Effect Transistors. ROHM has low current type power MOSFETs of high-efficiency / high breakdown resistance for switching power supply to meet various needs in the market.

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - R5009ANX - 1241553-R5009ANX - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - R5009ANX
1241553-R5009ANX
TRANSISTORS - Transistors - FETs, MOSFETs - RF - R5009ANX 1241553-R5009ANX
Manufacturer: Rohm Semiconductor Win Source Part Number: 1241553-R5009ANX Packaging: Bulk Mounting Style: Through Hole Operating Temperature Range: 150°C (TJ) Package: TO-220-2 Full Pack Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Family Name: R5009ANX Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Manufacturer Homepage: www.rohm.com Manufacturer Package: TO-220FM Channel Type Type: N Drain Source Voltage: 500V Vgs(th) (Maximum) @ Id: 4.5V @ 1mA Gate Charge (Qg) (Maximum) @ Vgs: 21nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 650pF @ 25V Vgs (Maximum): ±30V Power Dissipation (Maximum): 50W (Tc) Rds On (Maximum) @ Id, Vgs: 720 mOhm @ 4.5A, 10V Alternative Parts (Cross-Reference): TK10A50D(LBS1CNO,Q; TK10A50D(STA4,Q); TK10A50D(Q); Introduction Date: January 31, 2008 ECCN: EAR99 Estimated EOL Date: 2019 Popularity: Medium Fake Threat In the Open Market: 35 pct. Supply and Demand Status: Limited

Manufacturer: Rohm Semiconductor
Win Source Part Number: 1241553-R5009ANX
Packaging: Bulk
Mounting Style: Through Hole
Operating Temperature Range: 150°C (TJ)
Package: TO-220-2 Full Pack
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Family Name: R5009ANX
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Manufacturer Homepage: www.rohm.com
Manufacturer Package: TO-220FM
Channel Type Type: N
Drain Source Voltage: 500V
Vgs(th) (Maximum) @ Id: 4.5V @ 1mA
Gate Charge (Qg) (Maximum) @ Vgs: 21nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 650pF @ 25V
Vgs (Maximum): ±30V
Power Dissipation (Maximum): 50W (Tc)
Rds On (Maximum) @ Id, Vgs: 720 mOhm @ 4.5A, 10V
Alternative Parts (Cross-Reference): TK10A50D(LBS1CNO,Q; TK10A50D(STA4,Q); TK10A50D(Q);
Introduction Date: January 31, 2008
ECCN: EAR99
Estimated EOL Date: 2019
Popularity: Medium
Fake Threat In the Open Market: 35 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Single FETs, MOSFETs - R5009ANX-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
R5009ANX-ND
Single FETs, MOSFETs R5009ANX-ND
N-Channel 500V 9A (Tc) 50W (Tc) Through Hole TO-220FM

N-Channel 500V 9A (Tc) 50W (Tc) Through Hole TO-220FM

Buy Now Datasheet
Single FETs, MOSFETs - 846-R5009ANX-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
846-R5009ANX-ND
Single FETs, MOSFETs 846-R5009ANX-ND
N-Channel 500V 9A (Tc) 50W (Tc) Through Hole TO-220FM

N-Channel 500V 9A (Tc) 50W (Tc) Through Hole TO-220FM

Buy Now Datasheet
Singapore, Singapore
500V 9A TO220 MOSFET Transistor
278-R5009ANX
500V 9A TO220 MOSFET Transistor 278-R5009ANX
MOSFET N-CH 500V 9A TO220 Product overview: R5009ANX from ROHM Semiconductor is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 500V, 9A, TO220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 500V, 9A, TO220, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-R5009ANX can be used for catalog matching and distributor lookup.

MOSFET N-CH 500V 9A TO220 Product overview: R5009ANX from ROHM Semiconductor is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 500V, 9A, TO220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 500V, 9A, TO220, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-R5009ANX can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
MOSFET N-CH 500V 9A TO220 - 687-R5009ANX - Utmel Electronic Limited
Hong Kong, China
MOSFET N-CH 500V 9A TO220
687-R5009ANX
MOSFET N-CH 500V 9A TO220 687-R5009ANX
MOSFET N-CH 500V 9A TO220

MOSFET N-CH 500V 9A TO220

Supplier's Site
Sheung Wan, Hong Kong
MOSFET
R5009ANX
MOSFET R5009ANX
MOSFET Silicon N-channel MOSFET, 10V Drive, N-Channel, Contains G-S protection diode, Low on-resistance, Fast switching, Wide SOA

MOSFET Silicon N-channel MOSFET, 10V Drive, N-Channel, Contains G-S protection diode, Low on-resistance, Fast switching, Wide SOA

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - R5009ANX - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
R5009ANX
Discrete Semiconductor Products - Transistors - FETs, MOSFETs R5009ANX
MOSFET N-CH 500V 9A TO220

MOSFET N-CH 500V 9A TO220

Supplier's Site

Technical Specifications

  ROHM Semiconductor USA, LLC Win Source Electronics DigiKey ERSAELECTRONICS PTE. LTD. Utmel Electronic Limited VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number R5009ANX 1241553-R5009ANX R5009ANX-ND 278-R5009ANX 687-R5009ANX R5009ANX R5009ANX
Product Name 10V Drive Nch MOSFET TRANSISTORS - Transistors - FETs, MOSFETs - RF - R5009ANX Single FETs, MOSFETs 500V 9A TO220 MOSFET Transistor MOSFET N-CH 500V 9A TO220 MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel N-Channel
V(BR)DSS 500 volts 500 volts
IDSS 9000 milliamps
PD 50000 milliwatts 50000 milliwatts 51 milliwatts 50000 milliwatts
TJ -55 to 150 C (-67 to 302 F) 150 C (302 F) 150 C (302 F) 150 C (302 F)
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