MOSFET N-CH 600V 20A LPTS
N-Channel 600V 20A (Tc) 40W (Tc) Surface Mount LPTS
N-Channel 600V 20A (Tc) 40W (Tc) Surface Mount LPTS
N-Channel 600V 20A (Tc) 40W (Tc) Surface Mount LPTS
MOSFET N-CH 600V 20A LPTS
MOSFET, N-CH, 600V, 20A, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:20A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.17ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation RoHS Compliant: Yes
| ODG (Origin Data Global) | DigiKey | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | R6020ENJTL | R6020ENJTLCT-ND | R6020ENJTL | R6020ENJTL | 99Y2397 |
| Product Name | Single FETs, MOSFETs | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Mosfet, N-Ch, 600V, 20A, To-263; Transistor Polarity Rohm |
| Polarity | N-Channel; N-Channel | N-Channel | |||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||
| V(BR)DSS | 600 volts | ||||
| IDSS | 20000 milliamps | 20000 milliamps | |||
| PD | 40000 milliwatts |
