Littelfuse, Inc. Datasheets for Metal-Oxide Semiconductor FET (MOSFET)
Metal-oxide semiconductor field-effect transistors (MOSFETs) are electronic switching devices with a conducting channel as the output. An electrode called a gate controls the width of the channel and determines how well the MOSFET conducts.
Metal-Oxide Semiconductor FET (MOSFET): Learn more
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| Product Name | Notes |
|---|---|
| As opposed to the enhancement-mode MOSFETs, these depletion-mode devices operate in a ‘normally-on’ mode, requiring zero turn-on voltage at the gate terminal. With blocking voltages up to 1700V and low... | |
| Depletion mode MOSFETs, unlike the regular enhancement type MOSFETs, require a negative gate bias to turn off. Consequently they remain on at or above zero gate bias voltage but otherwise... | |
| Description: Ultra Junction X4 86A/94A, 200V, MOSFET Low Qg Low Rdson High power dispassion High Eas | |
| Developed using a charge compensation principle and proprietary process technology, these Ultra Junction MOSFETs provide the best-in-class Figure of Merit (on-resistance times gate charge), which translates into lowest conduction and... | |
| Developed using the charge compensation principle and proprietary process technology, these new devices exhibit the lowest on-state resistances, along with low gate charges and superior dv/dt performance. Their avalanche capability... | |
| Enhancement Mode | |
| Industrial grade, single switch SiC mosfets built in a TO268 high voltage package with extra clearance and creepage for harsh, dirty industrial environmental conditions. | |
| Littelfuse 1700V, 750mOhm Silicon Carbide (SiC) MOSFET bring SiC fast switching and energy saving performance to the 1700V voltage range, focusing on auxiliary power supplies. The MOSFET is available in... | |
| Littelfuse SiC MOSFETs are available in 14A, 18A, 25A, 50A and 70A nominal current rating. They are available in TO-247-4L package with a Kelvin source connection. Not only does the... | |
| Littelfuse Silicon Carbide (SiC) MOSFET LSIC1MO120E0080 1200 V come in ratings of 1200 V, 80 mOhm in a TO-247-3L package. Optimized for high frequency, high-efficiency applications Extremely low gate charge... | |
| Littelfuse Silicon Carbide (SiC) MOSFET LSIC1MO120E0120 1200 V come in ratings of 1200 V, 120 mOhm in a TO-247-3L package. Optimized for high frequency, high-efficiency applications Extremely low gate charge... | |
| Littelfuse Silicon Carbide (SiC) MOSFET LSIC1MO120E0160 1200 V come in ratings of 1200 V, 160 mOhm in a TO-247-3L package. Optimized for high frequency, high-efficiency applications Extremely low gate charge... | |
| Our new 1700V, 750mOhm Silicon Carbide (SiC) MOSFETs are presented in TO-263-7L package. The separated source pin reduces significantly the parasitic source inductance path to the driver, which helps improve... | |
| P-Channel Standard Power MOSFETs are available in voltage rating from -100V to -600V in industry-popular TO-247 and surface mountable TO-268 packages. They are ideal for Buck Converters and for loads... | |
| Polar™ P-Channel MOSFETS are fabricated using our Polar technology platform, which significantly reduces the on-state resistance (RDSon) by 30% and gate charge (Qg) by 40% in comparison to legacy counterparts,... | |
| Polar™ Standard Power MOSFETs are tailored to provide designers with a device solution that offers the best compromise between performance and cost. These devices incorporate the Polar technology platform to... | |
| Polar2™ Standard Power MOSFETs are tailored to provide designers with a device solution that offers the best compromise between performance and cost. These devices incorporate the Polar technology platform to... | |
| Polar3™ Standard Power MOSFETs are suitable for a wide variety of power switching systems, including high-voltage power supplies, capacitor discharge circuits, pulse circuits, laser and x-ray generation systems, high-voltage automated... | |
| Tailored specifically for applications requiring Power MOSFETs to operate in their current saturation regions, these unique devices feature low thermal resistances, high power density, and extended Forward Bias Safe Operating... | |
| The High Voltage series of N-Channel Standard MOSFETs are suitable for a wide variety of power switching systems, including high-voltage power supplies, capacitor discharge circuits, pulse circuits, and current regulators. | |
| The new 200V X4 Ultra Junction MOSFETs are designed with the latest Ultra Junction technology for high efficiency power applications. They are available in TO-247 and TO-268HV Packages. They offer... | |
| The Very High Voltage series of N-Channel Standard MOSFETs are specifically designed to address demanding, fast-switching power conversion applications requiring very high blocking voltages up to 4.5kV. Thanks to the... | |
| These 40V TrenchT4™ Power MOSFETs constitute a new generation of high-current Trench devices. Available at either 270A or 340A current rating, they are optimized for synchronous rectification in switched-mode power... | |
| These devices are developed using a charge compensation principle and proprietary process technology, resulting in Power MOSFETs with significantly reduced resistance RDS(on) and gate charge Qg. A low on-state resistance... | |
| These devices are offered with drain-to-source voltage ratings from 40V to 170V and provide high current capabilities of up to 600 Amperes (Tc=@25oC). The combined high current ratings of these... | |
| Trench Gate Power MOSFETs are ideally suited for low voltage/ high current applications, requiring an exceedingly low RDS(ON), thus guaranteeing very low power Dissipation. This, combined with wide ranging operating... | |
| Trench P-Channel MOSFETs are well suited for ‘high side’ switching applications where a simple drive circuit referenced to ground can be employed, avoiding additional ‘high side’ driver circuitry commonly involved... | |
| Weighing only 8g, the SMPD package is much lighter (typically by 50%) than comparable conventional power modules, thereby enabling lower weight power systems. Due to its compact and ultra-low profile... | |
| When Power MOSFETs are used in the linear-mode operation, as opposed to their conventional switch-mode one, they are required to endure substantially high thermal and electrical stresses due to the... |
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