Littelfuse, Inc. 55V - 300V Trench Gate Power MOSFETs with HiPerFET™ Options IXTP160N10T

Description
Trench Gate Power MOSFETs are ideally suited for low voltage/ high current applications, requiring an exceedingly low RDS(on), thus guaranteeing very low power Dissipation. This, combined with wide ranging operating junction temperature from -40 °C to 175 °C make them suitable candidates for automobile applications and other similar demanding applications in harsh environments. Advantages: Easy to Mount Space Savings High power density International Standard Packages Low RDS(ON) Avalanche rated High Current Handling Capability Fast Intrinsic Rectifier
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Description
Trench Gate Power MOSFETs are ideally suited for low voltage/ high current applications, requiring an exceedingly low RDS(on), thus guaranteeing very low power Dissipation. This, combined with wide ranging operating junction temperature from -40 °C to 175 °C make them suitable candidates for automobile applications and other similar demanding applications in harsh environments. Advantages: Easy to Mount Space Savings High power density International Standard Packages Low RDS(ON) Avalanche rated High Current Handling Capability Fast Intrinsic Rectifier
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Datasheet
Datasheet Summary
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The IXTP160N10T is a 100V N-channel enhancement mode MOSFET in a TO-220 package, designed for high-current switching applications such as automotive systems, motor drives, and DC/DC converters. It has a maximum continuous drain current of 160 A at 25°C and an on-resistance of 7.0 mΩ at 10V gate drive and 25A drain current. The device is avalanche rated with an energy rating of 500 mJ and operates at junction temperatures from -55°C to 175°C. It features an ultra-low on-resistance, low package inductance, and a fast intrinsic diode. The thermal resistance from junction to case is 0.50 °C/W. The part meets the AEC-Q200 automotive qualification standard and is RoHS compliant. Its package weighs 3.0 g.

Datasheet Summary
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The IXTP160N10T is a 100V N-channel enhancement mode MOSFET in a TO-220 package, designed for high-current switching applications such as automotive systems, motor drives, and DC/DC converters. It has a maximum continuous drain current of 160 A at 25°C and an on-resistance of 7.0 mΩ at 10V gate drive and 25A drain current. The device is avalanche rated with an energy rating of 500 mJ and operates at junction temperatures from -55°C to 175°C. It features an ultra-low on-resistance, low package inductance, and a fast intrinsic diode. The thermal resistance from junction to case is 0.50 °C/W. The part meets the AEC-Q200 automotive qualification standard and is RoHS compliant. Its package weighs 3.0 g.

Suppliers

Company
Product
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Supplier Links
55V - 300V Trench Gate Power MOSFETs with HiPerFET™ Options - IXTP160N10T - Littelfuse, Inc.
Rosemont, IL, United States
55V - 300V Trench Gate Power MOSFETs with HiPerFET™ Options
IXTP160N10T
55V - 300V Trench Gate Power MOSFETs with HiPerFET™ Options IXTP160N10T
Trench Gate Power MOSFETs are ideally suited for low voltage/ high current applications, requiring an exceedingly low RDS(on), thus guaranteeing very low power Dissipation. This, combined with wide ranging operating junction temperature from -40 °C to 175 °C make them suitable candidates for automobile applications and other similar demanding applications in harsh environments. Advantages: Easy to Mount Space Savings High power density International Standard Packages Low RDS(ON) Avalanche rated High Current Handling Capability Fast Intrinsic Rectifier

Trench Gate Power MOSFETs are ideally suited for low voltage/ high current applications, requiring an exceedingly low RDS(on), thus guaranteeing very low power Dissipation. This, combined with wide ranging operating junction temperature from -40 °C to 175 °C make them suitable candidates for automobile applications and other similar demanding applications in harsh environments. Advantages: Easy to Mount Space Savings High power density International Standard Packages Low RDS(ON) Avalanche rated High Current Handling Capability Fast Intrinsic Rectifier

Supplier's Site Datasheet
Singapore, Singapore
MOSFET Transistor
278-IXTP160N10T
MOSFET Transistor 278-IXTP160N10T
Power Field-Effect Transistor, Product overview: IXTP160N10T from Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXTP160N10T can be used for catalog matching and distributor lookup.

Power Field-Effect Transistor, Product overview: IXTP160N10T from Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXTP160N10T can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet

Technical Specifications

  Littelfuse, Inc. ERSAELECTRONICS PTE. LTD.
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number IXTP160N10T 278-IXTP160N10T
Product Name 55V - 300V Trench Gate Power MOSFETs with HiPerFET™ Options MOSFET Transistor
Polarity N-Channel
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