Littelfuse, Inc. 100V - 1200V N-Channel Standard Power MOSFETs IXTQ30N60P

Description
Polar™ Standard Power MOSFETs are tailored to provide designers with a device solution that offers the best compromise between performance and cost. These devices incorporate the Polar technology platform to achieve low on-state resistances (Rdson). Polar Standard MOSFETs feature low gate charge Qg values, resulting in more efficient switching at all frequencies. This gives the designer the option to operate at higher frequencies, which enables the use of smaller passive components in a variety of load switching designs. The avalanche capabilities of these devices add an additional safeguard against over-voltage transients. Advantages: Easy to mount Space savings High power density International Standard Packages Dynamic dv/dt rating Low RDS(on) and Qg Avalanche Rated Low Package Inductance
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Description
Polar™ Standard Power MOSFETs are tailored to provide designers with a device solution that offers the best compromise between performance and cost. These devices incorporate the Polar technology platform to achieve low on-state resistances (Rdson). Polar Standard MOSFETs feature low gate charge Qg values, resulting in more efficient switching at all frequencies. This gives the designer the option to operate at higher frequencies, which enables the use of smaller passive components in a variety of load switching designs. The avalanche capabilities of these devices add an additional safeguard against over-voltage transients. Advantages: Easy to mount Space savings High power density International Standard Packages Dynamic dv/dt rating Low RDS(on) and Qg Avalanche Rated Low Package Inductance
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Datasheet
Datasheet Summary
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The IXTQ30N60P is an N-channel enhancement mode MOSFET in a TO-3P package, rated for 600 V drain-source voltage and 30 A continuous drain current at 25°C. It has a maximum on-state resistance of 240 mΩ at VGS = 10 V and ID = 0.5 × 30 A, and is avalanche rated with a single-pulse energy absorption capability of 50 mJ. The device supports unclamped inductive switching and features a fast recovery body diode with a repetitive peak current of 80 A and a forward voltage of 1.5 V. Its thermal resistance from junction to case is 0.23 °C/W. The part meets international standard package requirements and is designed for low package inductance and ease of drive and protection. Operating junction temperature ranges from -55°C to 150°C. Mounting torque is specified at 1.13 Nm (10 lb.in.).

Datasheet Summary
Powered by GS/AI

The IXTQ30N60P is an N-channel enhancement mode MOSFET in a TO-3P package, rated for 600 V drain-source voltage and 30 A continuous drain current at 25°C. It has a maximum on-state resistance of 240 mΩ at VGS = 10 V and ID = 0.5 × 30 A, and is avalanche rated with a single-pulse energy absorption capability of 50 mJ. The device supports unclamped inductive switching and features a fast recovery body diode with a repetitive peak current of 80 A and a forward voltage of 1.5 V. Its thermal resistance from junction to case is 0.23 °C/W. The part meets international standard package requirements and is designed for low package inductance and ease of drive and protection. Operating junction temperature ranges from -55°C to 150°C. Mounting torque is specified at 1.13 Nm (10 lb.in.).

Suppliers

Company
Product
Description
Supplier Links
100V - 1200V N-Channel Standard Power MOSFETs - IXTQ30N60P - Littelfuse, Inc.
Rosemont, IL, United States
100V - 1200V N-Channel Standard Power MOSFETs
IXTQ30N60P
100V - 1200V N-Channel Standard Power MOSFETs IXTQ30N60P
Polar™ Standard Power MOSFETs are tailored to provide designers with a device solution that offers the best compromise between performance and cost. These devices incorporate the Polar technology platform to achieve low on-state resistances (Rdson). Polar Standard MOSFETs feature low gate charge Qg values, resulting in more efficient switching at all frequencies. This gives the designer the option to operate at higher frequencies, which enables the use of smaller passive components in a variety of load switching designs. The avalanche capabilities of these devices add an additional safeguard against over-voltage transients. Advantages: Easy to mount Space savings High power density International Standard Packages Dynamic dv/dt rating Low RDS(on) and Qg Avalanche Rated Low Package Inductance

Polar™ Standard Power MOSFETs are tailored to provide designers with a device solution that offers the best compromise between performance and cost. These devices incorporate the Polar technology platform to achieve low on-state resistances (Rdson). Polar Standard MOSFETs feature low gate charge Qg values, resulting in more efficient switching at all frequencies. This gives the designer the option to operate at higher frequencies, which enables the use of smaller passive components in a variety of load switching designs. The avalanche capabilities of these devices add an additional safeguard against over-voltage transients. Advantages: Easy to mount Space savings High power density International Standard Packages Dynamic dv/dt rating Low RDS(on) and Qg Avalanche Rated Low Package Inductance

Supplier's Site Datasheet
Singapore, Singapore
N-Channel 30A 600V 0.24ohm MOSFET Transistor
278-IXTQ30N60P
N-Channel 30A 600V 0.24ohm MOSFET Transistor 278-IXTQ30N60P
Power Field-Effect Transistor, 30A I(D), 600V, 0.24ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN Product overview: IXTQ30N60P from Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 30A, 600V, 0.24ohm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30A, 600V, 0.24ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXTQ30N60P can be used for catalog matching and distributor lookup.

Power Field-Effect Transistor, 30A I(D), 600V, 0.24ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN Product overview: IXTQ30N60P from Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 30A, 600V, 0.24ohm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30A, 600V, 0.24ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXTQ30N60P can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet

Technical Specifications

  Littelfuse, Inc. ERSAELECTRONICS PTE. LTD.
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number IXTQ30N60P 278-IXTQ30N60P
Product Name 100V - 1200V N-Channel Standard Power MOSFETs N-Channel 30A 600V 0.24ohm MOSFET Transistor
Polarity N-Channel
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