Littelfuse, Inc. -50V to -200V P-Channel Power MOSFETs IXTR210P10T

Description
Trench P-Channel MOSFETs are well suited for ‘high side’ switching applications where a simple drive circuit referenced to ground can be employed, avoiding additional ‘high side’ driver circuitry commonly involved when using an N-Channel MOSFET. This enables designers to reduce component count, thereby improving drive circuit simplicity and over-all component cost structure. Furthermore, it allows for the design of a complementary power output stage with a corresponding N-Channel MOSFET, for a power half bridge stage paired with a simple drive circuit. Advantages: Low gate charge resulting in simple drive requirement High power density Fast switching Fast intrinsic diode Low Qg and RDSon Avalanche rated Extended FBSOA International standard packages
Request a Quote
Description
Trench P-Channel MOSFETs are well suited for ‘high side’ switching applications where a simple drive circuit referenced to ground can be employed, avoiding additional ‘high side’ driver circuitry commonly involved when using an N-Channel MOSFET. This enables designers to reduce component count, thereby improving drive circuit simplicity and over-all component cost structure. Furthermore, it allows for the design of a complementary power output stage with a corresponding N-Channel MOSFET, for a power half bridge stage paired with a simple drive circuit. Advantages: Low gate charge resulting in simple drive requirement High power density Fast switching Fast intrinsic diode Low Qg and RDSon Avalanche rated Extended FBSOA International standard packages
Request a Quote
Datasheet
Datasheet Summary
Powered by GS/AI

The IXTR210P10T is a P-channel enhancement mode MOSFET designed for high-side switching, push-pull amplifiers, and DC choppers. It is packaged in an ISOPLUS247 case with an isolated mounting surface and measures 5 g in weight. The device has a maximum drain-source voltage of -100 V and a continuous drain current of -195 A at 25°C. It features a maximum on-resistance of 8 mΩ at -10 V gate-source voltage and -105 A drain current, and is avalanche rated with an extended FBSOA. The device supports a peak pulse current of 800 A and has a thermal resistance from junction to case of 0.21 °C/W. It includes a fast intrinsic rectifier and a maximum junction temperature of 150 °C. The isolation voltage is rated at 2500 V~.

Datasheet Summary
Powered by GS/AI

The IXTR210P10T is a P-channel enhancement mode MOSFET designed for high-side switching, push-pull amplifiers, and DC choppers. It is packaged in an ISOPLUS247 case with an isolated mounting surface and measures 5 g in weight. The device has a maximum drain-source voltage of -100 V and a continuous drain current of -195 A at 25°C. It features a maximum on-resistance of 8 mΩ at -10 V gate-source voltage and -105 A drain current, and is avalanche rated with an extended FBSOA. The device supports a peak pulse current of 800 A and has a thermal resistance from junction to case of 0.21 °C/W. It includes a fast intrinsic rectifier and a maximum junction temperature of 150 °C. The isolation voltage is rated at 2500 V~.

Suppliers

Company
Product
Description
Supplier Links
-50V to -200V P-Channel Power MOSFETs - IXTR210P10T - Littelfuse, Inc.
Rosemont, IL, United States
-50V to -200V P-Channel Power MOSFETs
IXTR210P10T
-50V to -200V P-Channel Power MOSFETs IXTR210P10T
Trench P-Channel MOSFETs are well suited for ‘high side’ switching applications where a simple drive circuit referenced to ground can be employed, avoiding additional ‘high side’ driver circuitry commonly involved when using an N-Channel MOSFET. This enables designers to reduce component count, thereby improving drive circuit simplicity and over-all component cost structure. Furthermore, it allows for the design of a complementary power output stage with a corresponding N-Channel MOSFET, for a power half bridge stage paired with a simple drive circuit. Advantages: Low gate charge resulting in simple drive requirement High power density Fast switching Fast intrinsic diode Low Qg and RDSon Avalanche rated Extended FBSOA International standard packages

Trench P-Channel MOSFETs are well suited for ‘high side’ switching applications where a simple drive circuit referenced to ground can be employed, avoiding additional ‘high side’ driver circuitry commonly involved when using an N-Channel MOSFET. This enables designers to reduce component count, thereby improving drive circuit simplicity and over-all component cost structure. Furthermore, it allows for the design of a complementary power output stage with a corresponding N-Channel MOSFET, for a power half bridge stage paired with a simple drive circuit. Advantages: Low gate charge resulting in simple drive requirement High power density Fast switching Fast intrinsic diode Low Qg and RDSon Avalanche rated Extended FBSOA International standard packages

Supplier's Site Datasheet
Singapore, Singapore
MOSFET Transistor
278-IXTR210P10T
MOSFET Transistor 278-IXTR210P10T
Power Field-Effect Transistor, Product overview: IXTR210P10T from Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXTR210P10T can be used for catalog matching and distributor lookup.

Power Field-Effect Transistor, Product overview: IXTR210P10T from Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXTR210P10T can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet

Technical Specifications

  Littelfuse, Inc. ERSAELECTRONICS PTE. LTD.
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number IXTR210P10T 278-IXTR210P10T
Product Name -50V to -200V P-Channel Power MOSFETs MOSFET Transistor
Polarity P-Channel
Unlock Full Specs
to access all available technical data

Similar Products

Single FETs, MOSFETs - 448-AUIRF1010ZSTRLTR-ND - DigiKey
Specs
Polarity N-Channel
Package Type TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Transistor Grade / Operating Range Automotive
View Details
3 suppliers
QUAD/DUAL N-CHANNEL ENHANCEMENT MODE EPAD® PRECISION MATCHED PAIR MOSFET ARRAY - ALD110904SAL - Advanced Linear Devices, Inc.
Specs
Polarity N-Channel
MOSFET Operating Mode Enhancement; Precision Enhancement Mode
V(BR)DSS 10 volts
View Details
3 suppliers
N-channel TrenchMOS standard level FET - BUK7Y28-75B,115 - Nexperia B.V.
Specs
Package Type SOT669 SOT669
Transistor Grade / Operating Range Automotive
View Details
5 suppliers