Littelfuse, Inc. 100V - 1200V N-Channel Standard Power MOSFETs IXTT170N10P

Description
Polar™ Standard Power MOSFETs are tailored to provide designers with a device solution that offers the best compromise between performance and cost. These devices incorporate the Polar technology platform to achieve low on-state resistances RDS(ON). Polar Standard MOSFETs feature low gate charge Qg values, resulting in more efficient switching at all frequencies. This gives the designer the option to operate at higher frequencies, which enables the use of smaller passive components in a variety of load switching designs. The avalanche capabilities of these devices add an additional safeguard against over-voltage transients. Advantages: Easy to mount Space savings High power density International Standard Packages Dynamic dv/dt rating Low RDS(ON) and Qg Avalanche Rated Low Package Inductance
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Description
Polar™ Standard Power MOSFETs are tailored to provide designers with a device solution that offers the best compromise between performance and cost. These devices incorporate the Polar technology platform to achieve low on-state resistances RDS(ON). Polar Standard MOSFETs feature low gate charge Qg values, resulting in more efficient switching at all frequencies. This gives the designer the option to operate at higher frequencies, which enables the use of smaller passive components in a variety of load switching designs. The avalanche capabilities of these devices add an additional safeguard against over-voltage transients. Advantages: Easy to mount Space savings High power density International Standard Packages Dynamic dv/dt rating Low RDS(ON) and Qg Avalanche Rated Low Package Inductance
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Datasheet
Datasheet Summary
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The IXTT170N10P is a 100V, 170A N-channel enhancement mode MOSFET in a TO-268 package with dimensions of 25.91-26.16 mm in length and 19.81-19.96 mm in width. It features a maximum on-state resistance of 9 mΩ at 25°C and 7 mΩ at 15V gate voltage, an avalanche energy rating of 2 J, and a continuous drain current limit of 170 A. The device is avalanche rated, has a fast intrinsic rectifier, low package inductance, and a thermal resistance from junction to case of 0.21 °C/W. It is rated for operation from -55°C to 175°C junction temperature and is designed for switch-mode power supplies, DC-DC converters, motor drives, and laser drivers.

Datasheet Summary
Powered by GS/AI

The IXTT170N10P is a 100V, 170A N-channel enhancement mode MOSFET in a TO-268 package with dimensions of 25.91-26.16 mm in length and 19.81-19.96 mm in width. It features a maximum on-state resistance of 9 mΩ at 25°C and 7 mΩ at 15V gate voltage, an avalanche energy rating of 2 J, and a continuous drain current limit of 170 A. The device is avalanche rated, has a fast intrinsic rectifier, low package inductance, and a thermal resistance from junction to case of 0.21 °C/W. It is rated for operation from -55°C to 175°C junction temperature and is designed for switch-mode power supplies, DC-DC converters, motor drives, and laser drivers.

Suppliers

Company
Product
Description
Supplier Links
100V - 1200V N-Channel Standard Power MOSFETs - IXTT170N10P - Littelfuse, Inc.
Rosemont, IL, United States
100V - 1200V N-Channel Standard Power MOSFETs
IXTT170N10P
100V - 1200V N-Channel Standard Power MOSFETs IXTT170N10P
Polar™ Standard Power MOSFETs are tailored to provide designers with a device solution that offers the best compromise between performance and cost. These devices incorporate the Polar technology platform to achieve low on-state resistances RDS(ON). Polar Standard MOSFETs feature low gate charge Qg values, resulting in more efficient switching at all frequencies. This gives the designer the option to operate at higher frequencies, which enables the use of smaller passive components in a variety of load switching designs. The avalanche capabilities of these devices add an additional safeguard against over-voltage transients. Advantages: Easy to mount Space savings High power density International Standard Packages Dynamic dv/dt rating Low RDS(ON) and Qg Avalanche Rated Low Package Inductance

Polar™ Standard Power MOSFETs are tailored to provide designers with a device solution that offers the best compromise between performance and cost. These devices incorporate the Polar technology platform to achieve low on-state resistances RDS(ON). Polar Standard MOSFETs feature low gate charge Qg values, resulting in more efficient switching at all frequencies. This gives the designer the option to operate at higher frequencies, which enables the use of smaller passive components in a variety of load switching designs. The avalanche capabilities of these devices add an additional safeguard against over-voltage transients. Advantages: Easy to mount Space savings High power density International Standard Packages Dynamic dv/dt rating Low RDS(ON) and Qg Avalanche Rated Low Package Inductance

Supplier's Site Datasheet
Singapore, Singapore
N-Channel 170A 100V 0.009ohm MOSFET Transistor
278-IXTT170N10P
N-Channel 170A 100V 0.009ohm MOSFET Transistor 278-IXTT170N10P
Power Field-Effect Transistor, 170A I(D), 100V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268AA, TO-268, 3 PIN Product overview: IXTT170N10P from Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 170A, 100V, 0.009ohm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 170A, 100V, 0.009ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXTT170N10P can be used for catalog matching and distributor lookup.

Power Field-Effect Transistor, 170A I(D), 100V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268AA, TO-268, 3 PIN Product overview: IXTT170N10P from Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 170A, 100V, 0.009ohm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 170A, 100V, 0.009ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXTT170N10P can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet

Technical Specifications

  Littelfuse, Inc. ERSAELECTRONICS PTE. LTD.
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number IXTT170N10P 278-IXTT170N10P
Product Name 100V - 1200V N-Channel Standard Power MOSFETs N-Channel 170A 100V 0.009ohm MOSFET Transistor
Polarity N-Channel
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