Littelfuse, Inc. -50V to -200V P-Channel Power MOSFETs IXTA96P085T

Description
Trench P-Channel MOSFETs are well suited for ‘high side’ switching applications where a simple drive circuit referenced to ground can be employed, avoiding additional ‘high side’ driver circuitry commonly involved when using an N-Channel MOSFET. This enables designers to reduce component count, thereby improving drive circuit simplicity and over-all component cost structure. Furthermore, it allows for the design of a complementary power output stage with a corresponding N-Channel MOSFET, for a power half bridge stage paired with a simple drive circuit. Advantages: Low gate charge resulting in simple drive requirement High power density Fast switching Fast intrinsic diode Low Qg and RDSon Avalanche rated Extended FBSOA International standard packages
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Description
Trench P-Channel MOSFETs are well suited for ‘high side’ switching applications where a simple drive circuit referenced to ground can be employed, avoiding additional ‘high side’ driver circuitry commonly involved when using an N-Channel MOSFET. This enables designers to reduce component count, thereby improving drive circuit simplicity and over-all component cost structure. Furthermore, it allows for the design of a complementary power output stage with a corresponding N-Channel MOSFET, for a power half bridge stage paired with a simple drive circuit. Advantages: Low gate charge resulting in simple drive requirement High power density Fast switching Fast intrinsic diode Low Qg and RDSon Avalanche rated Extended FBSOA International standard packages
Request a Quote
Datasheet
Datasheet Summary
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The IXTA96P085T is a P-channel enhancement mode MOSFET for high-side switching, push-pull amplifiers, and battery charging applications, housed in a TO-263 AA package measuring 9.65 mm by 8.13 mm with a weight of 2.5 g. It has a drain-source voltage rating of -85 V and a continuous drain current of -96 A at 25°C, with a maximum on-state resistance of 13 mΩ at -10 V gate drive. The device is avalanche rated, features a fast intrinsic diode, and meets international standard package dimensions. Thermal resistance from junction to case is 0.42 °C/W. It complies with AEC-Q200 and is RoHS compliant.

Datasheet Summary
Powered by GS/AI

The IXTA96P085T is a P-channel enhancement mode MOSFET for high-side switching, push-pull amplifiers, and battery charging applications, housed in a TO-263 AA package measuring 9.65 mm by 8.13 mm with a weight of 2.5 g. It has a drain-source voltage rating of -85 V and a continuous drain current of -96 A at 25°C, with a maximum on-state resistance of 13 mΩ at -10 V gate drive. The device is avalanche rated, features a fast intrinsic diode, and meets international standard package dimensions. Thermal resistance from junction to case is 0.42 °C/W. It complies with AEC-Q200 and is RoHS compliant.

Suppliers

Company
Product
Description
Supplier Links
-50V to -200V P-Channel Power MOSFETs - IXTA96P085T - Littelfuse, Inc.
Rosemont, IL, United States
-50V to -200V P-Channel Power MOSFETs
IXTA96P085T
-50V to -200V P-Channel Power MOSFETs IXTA96P085T
Trench P-Channel MOSFETs are well suited for ‘high side’ switching applications where a simple drive circuit referenced to ground can be employed, avoiding additional ‘high side’ driver circuitry commonly involved when using an N-Channel MOSFET. This enables designers to reduce component count, thereby improving drive circuit simplicity and over-all component cost structure. Furthermore, it allows for the design of a complementary power output stage with a corresponding N-Channel MOSFET, for a power half bridge stage paired with a simple drive circuit. Advantages: Low gate charge resulting in simple drive requirement High power density Fast switching Fast intrinsic diode Low Qg and RDSon Avalanche rated Extended FBSOA International standard packages

Trench P-Channel MOSFETs are well suited for ‘high side’ switching applications where a simple drive circuit referenced to ground can be employed, avoiding additional ‘high side’ driver circuitry commonly involved when using an N-Channel MOSFET. This enables designers to reduce component count, thereby improving drive circuit simplicity and over-all component cost structure. Furthermore, it allows for the design of a complementary power output stage with a corresponding N-Channel MOSFET, for a power half bridge stage paired with a simple drive circuit. Advantages: Low gate charge resulting in simple drive requirement High power density Fast switching Fast intrinsic diode Low Qg and RDSon Avalanche rated Extended FBSOA International standard packages

Supplier's Site Datasheet
Singapore, Singapore
P-Channel 85V 96A MOSFET Transistor
278-IXTA96P085T
P-Channel 85V 96A MOSFET Transistor 278-IXTA96P085T
P-Channel MOSFET, 85V, 96A, TO-268 Product overview: IXTA96P085T from Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, 85V, 96A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 85V, 96A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXTA96P085T can be used for catalog matching and distributor lookup.

P-Channel MOSFET, 85V, 96A, TO-268 Product overview: IXTA96P085T from Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, 85V, 96A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 85V, 96A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXTA96P085T can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet

Technical Specifications

  Littelfuse, Inc. ERSAELECTRONICS PTE. LTD.
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number IXTA96P085T 278-IXTA96P085T
Product Name -50V to -200V P-Channel Power MOSFETs P-Channel 85V 96A MOSFET Transistor
Polarity P-Channel
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