Littelfuse, Inc. 100V - 1200V N-Channel Standard Power MOSFETs IXTQ69N30P

Description
Polar™ Standard Power MOSFETs are tailored to provide designers with a device solution that offers the best compromise between performance and cost. These devices incorporate the Polar technology platform to achieve low on-state resistances (Rdson). Polar Standard MOSFETs feature low gate charge Qg values, resulting in more efficient switching at all frequencies. This gives the designer the option to operate at higher frequencies, which enables the use of smaller passive components in a variety of load switching designs. The avalanche capabilities of these devices add an additional safeguard against over-voltage transients. Advantages: Easy to mount Space savings High power density International Standard Packages Dynamic dv/dt rating Low RDS(on) and Qg Avalanche Rated Low Package Inductance
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Description
Polar™ Standard Power MOSFETs are tailored to provide designers with a device solution that offers the best compromise between performance and cost. These devices incorporate the Polar technology platform to achieve low on-state resistances (Rdson). Polar Standard MOSFETs feature low gate charge Qg values, resulting in more efficient switching at all frequencies. This gives the designer the option to operate at higher frequencies, which enables the use of smaller passive components in a variety of load switching designs. The avalanche capabilities of these devices add an additional safeguard against over-voltage transients. Advantages: Easy to mount Space savings High power density International Standard Packages Dynamic dv/dt rating Low RDS(on) and Qg Avalanche Rated Low Package Inductance
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Datasheet
Datasheet Summary
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The IXTQ69N30P is an N-channel enhancement mode MOSFET rated for 300 V drain-source voltage and 69 A continuous drain current, designed for high-power switching applications such as DC-DC converters, motor drives, and uninterruptible power supplies. It is packaged in a TO-3P case, weighing 5.5 g, with a maximum junction temperature of 150°C and a thermal resistance from junction to case of 0.21 °C/W. The device features a typical on-resistance of 49 mΩ at 10 V gate voltage and 34.5 A drain current, an avalanche energy rating of 1.5 J, and a fast intrinsic body diode with a reverse recovery charge of 4.13 μC at 100 V. It meets the AEC-Q200 standard and is rated for a dv/dt of 15 V/ns. The gate charge totals 180 nC, supporting efficient switching performance. The package is designed for low inductance and easy mounting, with a mounting torque of 1.13 Nm.

Datasheet Summary
Powered by GS/AI

The IXTQ69N30P is an N-channel enhancement mode MOSFET rated for 300 V drain-source voltage and 69 A continuous drain current, designed for high-power switching applications such as DC-DC converters, motor drives, and uninterruptible power supplies. It is packaged in a TO-3P case, weighing 5.5 g, with a maximum junction temperature of 150°C and a thermal resistance from junction to case of 0.21 °C/W. The device features a typical on-resistance of 49 mΩ at 10 V gate voltage and 34.5 A drain current, an avalanche energy rating of 1.5 J, and a fast intrinsic body diode with a reverse recovery charge of 4.13 μC at 100 V. It meets the AEC-Q200 standard and is rated for a dv/dt of 15 V/ns. The gate charge totals 180 nC, supporting efficient switching performance. The package is designed for low inductance and easy mounting, with a mounting torque of 1.13 Nm.

Suppliers

Company
Product
Description
Supplier Links
100V - 1200V N-Channel Standard Power MOSFETs - IXTQ69N30P - Littelfuse, Inc.
Rosemont, IL, United States
100V - 1200V N-Channel Standard Power MOSFETs
IXTQ69N30P
100V - 1200V N-Channel Standard Power MOSFETs IXTQ69N30P
Polar™ Standard Power MOSFETs are tailored to provide designers with a device solution that offers the best compromise between performance and cost. These devices incorporate the Polar technology platform to achieve low on-state resistances (Rdson). Polar Standard MOSFETs feature low gate charge Qg values, resulting in more efficient switching at all frequencies. This gives the designer the option to operate at higher frequencies, which enables the use of smaller passive components in a variety of load switching designs. The avalanche capabilities of these devices add an additional safeguard against over-voltage transients. Advantages: Easy to mount Space savings High power density International Standard Packages Dynamic dv/dt rating Low RDS(on) and Qg Avalanche Rated Low Package Inductance

Polar™ Standard Power MOSFETs are tailored to provide designers with a device solution that offers the best compromise between performance and cost. These devices incorporate the Polar technology platform to achieve low on-state resistances (Rdson). Polar Standard MOSFETs feature low gate charge Qg values, resulting in more efficient switching at all frequencies. This gives the designer the option to operate at higher frequencies, which enables the use of smaller passive components in a variety of load switching designs. The avalanche capabilities of these devices add an additional safeguard against over-voltage transients. Advantages: Easy to mount Space savings High power density International Standard Packages Dynamic dv/dt rating Low RDS(on) and Qg Avalanche Rated Low Package Inductance

Supplier's Site Datasheet
Singapore, Singapore
N-Channel 69A 300V 0.049ohm MOSFET Transistor
278-IXTQ69N30P
N-Channel 69A 300V 0.049ohm MOSFET Transistor 278-IXTQ69N30P
Power Field-Effect Transistor, 69A I(D), 300V, 0.049ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN Product overview: IXTQ69N30P from Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 69A, 300V, 0.049ohm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 69A, 300V, 0.049ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXTQ69N30P can be used for catalog matching and distributor lookup.

Power Field-Effect Transistor, 69A I(D), 300V, 0.049ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN Product overview: IXTQ69N30P from Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 69A, 300V, 0.049ohm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 69A, 300V, 0.049ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXTQ69N30P can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet

Technical Specifications

  Littelfuse, Inc. ERSAELECTRONICS PTE. LTD.
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number IXTQ69N30P 278-IXTQ69N30P
Product Name 100V - 1200V N-Channel Standard Power MOSFETs N-Channel 69A 300V 0.049ohm MOSFET Transistor
Polarity N-Channel
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