Littelfuse, Inc. -50V to -200V P-Channel Power MOSFETs IXTP96P085T

Description
Trench P-Channel MOSFETs are well suited for ‘high side’ switching applications where a simple drive circuit referenced to ground can be employed, avoiding additional ‘high side’ driver circuitry commonly involved when using an N-Channel MOSFET. This enables designers to reduce component count, thereby improving drive circuit simplicity and over-all component cost structure. Furthermore, it allows for the design of a complementary power output stage with a corresponding N-Channel MOSFET, for a power half bridge stage paired with a simple drive circuit. Advantages: Low gate charge resulting in simple drive requirement High power density Fast switching Fast intrinsic diode Low Qg and RDSon Avalanche rated Extended FBSOA International standard packages
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Description
Trench P-Channel MOSFETs are well suited for ‘high side’ switching applications where a simple drive circuit referenced to ground can be employed, avoiding additional ‘high side’ driver circuitry commonly involved when using an N-Channel MOSFET. This enables designers to reduce component count, thereby improving drive circuit simplicity and over-all component cost structure. Furthermore, it allows for the design of a complementary power output stage with a corresponding N-Channel MOSFET, for a power half bridge stage paired with a simple drive circuit. Advantages: Low gate charge resulting in simple drive requirement High power density Fast switching Fast intrinsic diode Low Qg and RDSon Avalanche rated Extended FBSOA International standard packages
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Datasheet
Datasheet Summary
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The IXTP96P085T is a P-channel enhancement mode MOSFET designed for high-side switching, push-pull amplifiers, DC choppers, and battery charger applications. It is packaged in a TO-220AB case with a weight of 3.0 g. The device has a maximum drain-source voltage of -85 V and a continuous drain current of -96 A at 25°C. Its drain-source on-resistance is 13 mΩ at -10 V gate-source voltage and -48 A drain current. The MOSFET is avalanche rated and features an extended FBSOA and a fast intrinsic diode. Thermal resistance from junction to case is 0.50 °C/W. Operating junction and storage temperatures range from -55°C to 150°C.

Datasheet Summary
Powered by GS/AI

The IXTP96P085T is a P-channel enhancement mode MOSFET designed for high-side switching, push-pull amplifiers, DC choppers, and battery charger applications. It is packaged in a TO-220AB case with a weight of 3.0 g. The device has a maximum drain-source voltage of -85 V and a continuous drain current of -96 A at 25°C. Its drain-source on-resistance is 13 mΩ at -10 V gate-source voltage and -48 A drain current. The MOSFET is avalanche rated and features an extended FBSOA and a fast intrinsic diode. Thermal resistance from junction to case is 0.50 °C/W. Operating junction and storage temperatures range from -55°C to 150°C.

Suppliers

Company
Product
Description
Supplier Links
-50V to -200V P-Channel Power MOSFETs - IXTP96P085T - Littelfuse, Inc.
Rosemont, IL, United States
-50V to -200V P-Channel Power MOSFETs
IXTP96P085T
-50V to -200V P-Channel Power MOSFETs IXTP96P085T
Trench P-Channel MOSFETs are well suited for ‘high side’ switching applications where a simple drive circuit referenced to ground can be employed, avoiding additional ‘high side’ driver circuitry commonly involved when using an N-Channel MOSFET. This enables designers to reduce component count, thereby improving drive circuit simplicity and over-all component cost structure. Furthermore, it allows for the design of a complementary power output stage with a corresponding N-Channel MOSFET, for a power half bridge stage paired with a simple drive circuit. Advantages: Low gate charge resulting in simple drive requirement High power density Fast switching Fast intrinsic diode Low Qg and RDSon Avalanche rated Extended FBSOA International standard packages

Trench P-Channel MOSFETs are well suited for ‘high side’ switching applications where a simple drive circuit referenced to ground can be employed, avoiding additional ‘high side’ driver circuitry commonly involved when using an N-Channel MOSFET. This enables designers to reduce component count, thereby improving drive circuit simplicity and over-all component cost structure. Furthermore, it allows for the design of a complementary power output stage with a corresponding N-Channel MOSFET, for a power half bridge stage paired with a simple drive circuit. Advantages: Low gate charge resulting in simple drive requirement High power density Fast switching Fast intrinsic diode Low Qg and RDSon Avalanche rated Extended FBSOA International standard packages

Supplier's Site Datasheet
Singapore, Singapore
P-Channel 85V 96A TO-220 MOSFET Transistor
278-IXTP96P085T
P-Channel 85V 96A TO-220 MOSFET Transistor 278-IXTP96P085T
P-Channel MOSFET, 85V, 96A, TO-220 Product overview: IXTP96P085T from Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, 85V, 96A, TO-220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 85V, 96A, TO-220, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXTP96P085T can be used for catalog matching and distributor lookup.

P-Channel MOSFET, 85V, 96A, TO-220 Product overview: IXTP96P085T from Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, 85V, 96A, TO-220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 85V, 96A, TO-220, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXTP96P085T can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet

Technical Specifications

  Littelfuse, Inc. ERSAELECTRONICS PTE. LTD.
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number IXTP96P085T 278-IXTP96P085T
Product Name -50V to -200V P-Channel Power MOSFETs P-Channel 85V 96A TO-220 MOSFET Transistor
Polarity P-Channel
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