Littelfuse, Inc. 55V - 300V Trench Gate Power MOSFETs with HiPerFET™ Options IXTQ50N25T

Description
Trench Gate Power MOSFETs are ideally suited for low voltage/ high current applications, requiring an exceedingly low RDS(on), thus guaranteeing very low power Dissipation. This, combined with wide ranging operating junction temperature from -40 °C to 175 °C make them suitable candidates for automobile applications and other similar demanding applications in harsh environments. Advantages: Easy to Mount Space Savings High power density International Standard Packages Low RDS(ON) Avalanche rated High Current Handling Capability Fast Intrinsic Rectifier
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Description
Trench Gate Power MOSFETs are ideally suited for low voltage/ high current applications, requiring an exceedingly low RDS(on), thus guaranteeing very low power Dissipation. This, combined with wide ranging operating junction temperature from -40 °C to 175 °C make them suitable candidates for automobile applications and other similar demanding applications in harsh environments. Advantages: Easy to Mount Space Savings High power density International Standard Packages Low RDS(ON) Avalanche rated High Current Handling Capability Fast Intrinsic Rectifier
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Datasheet
Datasheet Summary
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The IXTQ50N25T is an N-channel enhancement mode MOSFET designed for high-power switching applications such as DC-DC converters, battery chargers, and motor drives. It is packaged in a TO-3P case with a maximum drain-source voltage of 250 V and a continuous drain current of 50 A at 25°C. The device has a maximum on-state resistance of 60 mΩ at VGS = 10 V and ID = 25 A. It is avalanche rated, features a fast intrinsic rectifier, and supports a junction temperature range of -55°C to 150°C. The thermal resistance from junction to case is 0.25°C/W. The part meets standard industrial reliability requirements and is mounted using a torque of 1.13 N·m.

Datasheet Summary
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The IXTQ50N25T is an N-channel enhancement mode MOSFET designed for high-power switching applications such as DC-DC converters, battery chargers, and motor drives. It is packaged in a TO-3P case with a maximum drain-source voltage of 250 V and a continuous drain current of 50 A at 25°C. The device has a maximum on-state resistance of 60 mΩ at VGS = 10 V and ID = 25 A. It is avalanche rated, features a fast intrinsic rectifier, and supports a junction temperature range of -55°C to 150°C. The thermal resistance from junction to case is 0.25°C/W. The part meets standard industrial reliability requirements and is mounted using a torque of 1.13 N·m.

Suppliers

Company
Product
Description
Supplier Links
55V - 300V Trench Gate Power MOSFETs with HiPerFET™ Options - IXTQ50N25T - Littelfuse, Inc.
Rosemont, IL, United States
55V - 300V Trench Gate Power MOSFETs with HiPerFET™ Options
IXTQ50N25T
55V - 300V Trench Gate Power MOSFETs with HiPerFET™ Options IXTQ50N25T
Trench Gate Power MOSFETs are ideally suited for low voltage/ high current applications, requiring an exceedingly low RDS(on), thus guaranteeing very low power Dissipation. This, combined with wide ranging operating junction temperature from -40 °C to 175 °C make them suitable candidates for automobile applications and other similar demanding applications in harsh environments. Advantages: Easy to Mount Space Savings High power density International Standard Packages Low RDS(ON) Avalanche rated High Current Handling Capability Fast Intrinsic Rectifier

Trench Gate Power MOSFETs are ideally suited for low voltage/ high current applications, requiring an exceedingly low RDS(on), thus guaranteeing very low power Dissipation. This, combined with wide ranging operating junction temperature from -40 °C to 175 °C make them suitable candidates for automobile applications and other similar demanding applications in harsh environments. Advantages: Easy to Mount Space Savings High power density International Standard Packages Low RDS(ON) Avalanche rated High Current Handling Capability Fast Intrinsic Rectifier

Supplier's Site Datasheet
Singapore, Singapore
MOSFET Transistor
278-IXTQ50N25T
MOSFET Transistor 278-IXTQ50N25T
Power Field-Effect Transistor, Product overview: IXTQ50N25T from Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXTQ50N25T can be used for catalog matching and distributor lookup.

Power Field-Effect Transistor, Product overview: IXTQ50N25T from Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXTQ50N25T can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet

Technical Specifications

  Littelfuse, Inc. ERSAELECTRONICS PTE. LTD.
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number IXTQ50N25T 278-IXTQ50N25T
Product Name 55V - 300V Trench Gate Power MOSFETs with HiPerFET™ Options MOSFET Transistor
Polarity N-Channel
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