Littelfuse, Inc. 100V - 1200V N-Channel Standard Power MOSFETs IXTQ22N50P

Description
Polar™ Standard Power MOSFETs are tailored to provide designers with a device solution that offers the best compromise between performance and cost. These devices incorporate the Polar technology platform to achieve low on-state resistances (Rdson). Polar Standard MOSFETs feature low gate charge Qg values, resulting in more efficient switching at all frequencies. This gives the designer the option to operate at higher frequencies, which enables the use of smaller passive components in a variety of load switching designs. The avalanche capabilities of these devices add an additional safeguard against over-voltage transients. Advantages: Easy to mount Space savings High power density International Standard Packages Dynamic dv/dt rating Low RDS(on) and Qg Avalanche Rated Low Package Inductance
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Description
Polar™ Standard Power MOSFETs are tailored to provide designers with a device solution that offers the best compromise between performance and cost. These devices incorporate the Polar technology platform to achieve low on-state resistances (Rdson). Polar Standard MOSFETs feature low gate charge Qg values, resulting in more efficient switching at all frequencies. This gives the designer the option to operate at higher frequencies, which enables the use of smaller passive components in a variety of load switching designs. The avalanche capabilities of these devices add an additional safeguard against over-voltage transients. Advantages: Easy to mount Space savings High power density International Standard Packages Dynamic dv/dt rating Low RDS(on) and Qg Avalanche Rated Low Package Inductance
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Datasheet
Datasheet Summary
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The IXTQ22N50P is an N-channel enhancement mode MOSFET rated for 500 V drain-source voltage and 22 A continuous drain current, designed for switched-mode and resonant-mode power supplies, DC-DC converters, laser drivers, and motor drives. It is packaged in a TO-3P case with a drain tab and measures 20.80 to 21.46 mm in length and 15.75 to 16.26 mm in width. The device has a maximum on-state resistance of 270 mΩ at 25°C, an avalanche energy rating of 750 mJ, and a thermal resistance from junction to case of 0.35 °C/W. It features a fast intrinsic diode with a reverse recovery time of 400 ns and is avalanche rated with a transient gate-source voltage limit of ±40 V. The operating junction temperature ranges from -55°C to 150°C, and the maximum lead temperature for soldering is 260°C for 10 seconds. Mounting torque is specified at 1.13 Nm (10 lb.in.).

Datasheet Summary
Powered by GS/AI

The IXTQ22N50P is an N-channel enhancement mode MOSFET rated for 500 V drain-source voltage and 22 A continuous drain current, designed for switched-mode and resonant-mode power supplies, DC-DC converters, laser drivers, and motor drives. It is packaged in a TO-3P case with a drain tab and measures 20.80 to 21.46 mm in length and 15.75 to 16.26 mm in width. The device has a maximum on-state resistance of 270 mΩ at 25°C, an avalanche energy rating of 750 mJ, and a thermal resistance from junction to case of 0.35 °C/W. It features a fast intrinsic diode with a reverse recovery time of 400 ns and is avalanche rated with a transient gate-source voltage limit of ±40 V. The operating junction temperature ranges from -55°C to 150°C, and the maximum lead temperature for soldering is 260°C for 10 seconds. Mounting torque is specified at 1.13 Nm (10 lb.in.).

Suppliers

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Product
Description
Supplier Links
100V - 1200V N-Channel Standard Power MOSFETs - IXTQ22N50P - Littelfuse, Inc.
Rosemont, IL, United States
100V - 1200V N-Channel Standard Power MOSFETs
IXTQ22N50P
100V - 1200V N-Channel Standard Power MOSFETs IXTQ22N50P
Polar™ Standard Power MOSFETs are tailored to provide designers with a device solution that offers the best compromise between performance and cost. These devices incorporate the Polar technology platform to achieve low on-state resistances (Rdson). Polar Standard MOSFETs feature low gate charge Qg values, resulting in more efficient switching at all frequencies. This gives the designer the option to operate at higher frequencies, which enables the use of smaller passive components in a variety of load switching designs. The avalanche capabilities of these devices add an additional safeguard against over-voltage transients. Advantages: Easy to mount Space savings High power density International Standard Packages Dynamic dv/dt rating Low RDS(on) and Qg Avalanche Rated Low Package Inductance

Polar™ Standard Power MOSFETs are tailored to provide designers with a device solution that offers the best compromise between performance and cost. These devices incorporate the Polar technology platform to achieve low on-state resistances (Rdson). Polar Standard MOSFETs feature low gate charge Qg values, resulting in more efficient switching at all frequencies. This gives the designer the option to operate at higher frequencies, which enables the use of smaller passive components in a variety of load switching designs. The avalanche capabilities of these devices add an additional safeguard against over-voltage transients. Advantages: Easy to mount Space savings High power density International Standard Packages Dynamic dv/dt rating Low RDS(on) and Qg Avalanche Rated Low Package Inductance

Supplier's Site Datasheet
Singapore, Singapore
N-Channel 22A 500V 0.27ohm MOSFET Transistor
278-IXTQ22N50P
N-Channel 22A 500V 0.27ohm MOSFET Transistor 278-IXTQ22N50P
Power Field-Effect Transistor, 22A I(D), 500V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN Product overview: IXTQ22N50P from Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 22A, 500V, 0.27ohm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 22A, 500V, 0.27ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXTQ22N50P can be used for catalog matching and distributor lookup.

Power Field-Effect Transistor, 22A I(D), 500V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN Product overview: IXTQ22N50P from Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 22A, 500V, 0.27ohm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 22A, 500V, 0.27ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXTQ22N50P can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet

Technical Specifications

  Littelfuse, Inc. ERSAELECTRONICS PTE. LTD.
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number IXTQ22N50P 278-IXTQ22N50P
Product Name 100V - 1200V N-Channel Standard Power MOSFETs N-Channel 22A 500V 0.27ohm MOSFET Transistor
Polarity N-Channel
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