Littelfuse, Inc. 100V - 1200V N-Channel Standard Power MOSFETs IXTQ26N50P

Description
Polar™ Standard Power MOSFETs are tailored to provide designers with a device solution that offers the best compromise between performance and cost. These devices incorporate the Polar technology platform to achieve low on-state resistances (Rdson). Polar Standard MOSFETs feature low gate charge Qg values, resulting in more efficient switching at all frequencies. This gives the designer the option to operate at higher frequencies, which enables the use of smaller passive components in a variety of load switching designs. The avalanche capabilities of these devices add an additional safeguard against over-voltage transients. Advantages: Easy to mount Space savings High power density International Standard Packages Dynamic dv/dt rating Low RDS(on) and Qg Avalanche Rated Low Package Inductance
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Description
Polar™ Standard Power MOSFETs are tailored to provide designers with a device solution that offers the best compromise between performance and cost. These devices incorporate the Polar technology platform to achieve low on-state resistances (Rdson). Polar Standard MOSFETs feature low gate charge Qg values, resulting in more efficient switching at all frequencies. This gives the designer the option to operate at higher frequencies, which enables the use of smaller passive components in a variety of load switching designs. The avalanche capabilities of these devices add an additional safeguard against over-voltage transients. Advantages: Easy to mount Space savings High power density International Standard Packages Dynamic dv/dt rating Low RDS(on) and Qg Avalanche Rated Low Package Inductance
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Datasheet
Datasheet Summary
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The IXTQ26N50P is an N-channel enhancement mode MOSFET rated for 500 V drain-source voltage and 26 A continuous drain current, designed for high-power switching applications with avalanche capability. It is packaged in a TO-3P case, weighing 6 g, with a maximum junction temperature of 150 °C. The device features a maximum on-state resistance of 230 mΩ at 25 °C and 10 V gate-source voltage, a thermal resistance from junction to case of 0.31 °C/W, and an unclamped inductive switching energy rating of 40 mJ. It meets standards for international standard packages, low package inductance, and is rated for 10 V/ns dv/dt. The device supports unclamped inductive switching and is avalanche-rated.

Datasheet Summary
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The IXTQ26N50P is an N-channel enhancement mode MOSFET rated for 500 V drain-source voltage and 26 A continuous drain current, designed for high-power switching applications with avalanche capability. It is packaged in a TO-3P case, weighing 6 g, with a maximum junction temperature of 150 °C. The device features a maximum on-state resistance of 230 mΩ at 25 °C and 10 V gate-source voltage, a thermal resistance from junction to case of 0.31 °C/W, and an unclamped inductive switching energy rating of 40 mJ. It meets standards for international standard packages, low package inductance, and is rated for 10 V/ns dv/dt. The device supports unclamped inductive switching and is avalanche-rated.

Suppliers

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Product
Description
Supplier Links
100V - 1200V N-Channel Standard Power MOSFETs - IXTQ26N50P - Littelfuse, Inc.
Rosemont, IL, United States
100V - 1200V N-Channel Standard Power MOSFETs
IXTQ26N50P
100V - 1200V N-Channel Standard Power MOSFETs IXTQ26N50P
Polar™ Standard Power MOSFETs are tailored to provide designers with a device solution that offers the best compromise between performance and cost. These devices incorporate the Polar technology platform to achieve low on-state resistances (Rdson). Polar Standard MOSFETs feature low gate charge Qg values, resulting in more efficient switching at all frequencies. This gives the designer the option to operate at higher frequencies, which enables the use of smaller passive components in a variety of load switching designs. The avalanche capabilities of these devices add an additional safeguard against over-voltage transients. Advantages: Easy to mount Space savings High power density International Standard Packages Dynamic dv/dt rating Low RDS(on) and Qg Avalanche Rated Low Package Inductance

Polar™ Standard Power MOSFETs are tailored to provide designers with a device solution that offers the best compromise between performance and cost. These devices incorporate the Polar technology platform to achieve low on-state resistances (Rdson). Polar Standard MOSFETs feature low gate charge Qg values, resulting in more efficient switching at all frequencies. This gives the designer the option to operate at higher frequencies, which enables the use of smaller passive components in a variety of load switching designs. The avalanche capabilities of these devices add an additional safeguard against over-voltage transients. Advantages: Easy to mount Space savings High power density International Standard Packages Dynamic dv/dt rating Low RDS(on) and Qg Avalanche Rated Low Package Inductance

Supplier's Site Datasheet
Singapore, Singapore
N-Channel 26A 500V 0.23ohm MOSFET Transistor
278-IXTQ26N50P
N-Channel 26A 500V 0.23ohm MOSFET Transistor 278-IXTQ26N50P
Power Field-Effect Transistor, 26A I(D), 500V, 0.23ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN Product overview: IXTQ26N50P from Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 26A, 500V, 0.23ohm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 26A, 500V, 0.23ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXTQ26N50P can be used for catalog matching and distributor lookup.

Power Field-Effect Transistor, 26A I(D), 500V, 0.23ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN Product overview: IXTQ26N50P from Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 26A, 500V, 0.23ohm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 26A, 500V, 0.23ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXTQ26N50P can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet

Technical Specifications

  Littelfuse, Inc. ERSAELECTRONICS PTE. LTD.
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number IXTQ26N50P 278-IXTQ26N50P
Product Name 100V - 1200V N-Channel Standard Power MOSFETs N-Channel 26A 500V 0.23ohm MOSFET Transistor
Polarity N-Channel
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