Littelfuse, Inc. Power Semiconductors & Control ICs - MOSFETs (Si/SiC) - N-Channel Trench Gate - Series: Gen1 - IXTQ182N055T IXTQ182N055T

Description
Trench Gate Power MOSFETs are ideally suited for low voltage/ high current applications, requiring an exceedingly low RDS(ON), thus guaranteeing very low power Dissipation. This, combined with wide ranging operating junction temperature from -40 °C to 175 °C make them suitable candidates for automobile applications and other similar demanding applications in harsh environments. Advantages: Easy to Mount Space Savings High power density International Standard Packages Low RDS(ON) Avalanche rated High Current Handling Capability Fast Intrinsic Rectifier
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Description
Trench Gate Power MOSFETs are ideally suited for low voltage/ high current applications, requiring an exceedingly low RDS(ON), thus guaranteeing very low power Dissipation. This, combined with wide ranging operating junction temperature from -40 °C to 175 °C make them suitable candidates for automobile applications and other similar demanding applications in harsh environments. Advantages: Easy to Mount Space Savings High power density International Standard Packages Low RDS(ON) Avalanche rated High Current Handling Capability Fast Intrinsic Rectifier
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Suppliers

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Power Semiconductors & Control ICs - MOSFETs (Si/SiC) - N-Channel Trench Gate - Series: Gen1 - IXTQ182N055T - IXTQ182N055T - Littelfuse, Inc.
Rosemont, IL, United States
Power Semiconductors & Control ICs - MOSFETs (Si/SiC) - N-Channel Trench Gate - Series: Gen1 - IXTQ182N055T
IXTQ182N055T
Power Semiconductors & Control ICs - MOSFETs (Si/SiC) - N-Channel Trench Gate - Series: Gen1 - IXTQ182N055T IXTQ182N055T
Trench Gate Power MOSFETs are ideally suited for low voltage/ high current applications, requiring an exceedingly low RDS(ON), thus guaranteeing very low power Dissipation. This, combined with wide ranging operating junction temperature from -40 °C to 175 °C make them suitable candidates for automobile applications and other similar demanding applications in harsh environments. Advantages: Easy to Mount Space Savings High power density International Standard Packages Low RDS(ON) Avalanche rated High Current Handling Capability Fast Intrinsic Rectifier

Trench Gate Power MOSFETs are ideally suited for low voltage/ high current applications, requiring an exceedingly low RDS(ON), thus guaranteeing very low power Dissipation. This, combined with wide ranging operating junction temperature from -40 °C to 175 °C make them suitable candidates for automobile applications and other similar demanding applications in harsh environments. Advantages: Easy to Mount Space Savings High power density International Standard Packages Low RDS(ON) Avalanche rated High Current Handling Capability Fast Intrinsic Rectifier

Supplier's Site Datasheet
Singapore
55V 182A MOSFET Transistor
278-IXTQ182N055T
55V 182A MOSFET Transistor 278-IXTQ182N055T
Trans MOSFET N-CH 55V 182A 3-Pin(3+Tab) TO-3P Product overview: IXTQ182N055T from Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 55V, 182A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 55V, 182A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXTQ182N055T can be used for catalog matching and distributor lookup.

Trans MOSFET N-CH 55V 182A 3-Pin(3+Tab) TO-3P Product overview: IXTQ182N055T from Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 55V, 182A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 55V, 182A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXTQ182N055T can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet

Technical Specifications

  Littelfuse, Inc. ERSAELECTRONICS PTE. LTD.
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number IXTQ182N055T 278-IXTQ182N055T
Product Name Power Semiconductors & Control ICs - MOSFETs (Si/SiC) - N-Channel Trench Gate - Series: Gen1 - IXTQ182N055T 55V 182A MOSFET Transistor
Polarity N-Channel
Package Type TO-3; TO-3P
MOSFET Operating Mode Enhancement
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