Littelfuse, Inc. 200V - 2500V N-Channel Linear Power MOSFETs with Extended FBSOAs IXTN62N50L

Description
When Power MOSFETs are used in the linear-mode operation, as opposed to their conventional switch-mode one, they are required to endure substantially high thermal and electrical stresses due to the simultaneous occurrence of high drain voltages and currents; these extreme stresses can cause typical devices to fail. Littelfuse Linear MOSFETs have been designed to address these kinds of device failures – the FBSOAs are “extended” when the positive feedback of electro-thermal instability is suppressed, giving rise to larger “operating windows.” The FBSOAs are guaranteed at 75°C. Designed for linear operation Guaranteed FBSOA at 75°C Avalanche rated International standard packages UL 94 V-0 Flammability qualified (molding epoxies)
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Description
When Power MOSFETs are used in the linear-mode operation, as opposed to their conventional switch-mode one, they are required to endure substantially high thermal and electrical stresses due to the simultaneous occurrence of high drain voltages and currents; these extreme stresses can cause typical devices to fail. Littelfuse Linear MOSFETs have been designed to address these kinds of device failures – the FBSOAs are “extended” when the positive feedback of electro-thermal instability is suppressed, giving rise to larger “operating windows.” The FBSOAs are guaranteed at 75°C. Designed for linear operation Guaranteed FBSOA at 75°C Avalanche rated International standard packages UL 94 V-0 Flammability qualified (molding epoxies)
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Datasheet
Datasheet Summary
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The IXTN62N50L is an N-channel enhancement mode MOSFET designed for linear-mode operation with extended forward bias safe operating area (FBSOA) and avalanche capability. It features a miniBLOC package with aluminum nitride isolation, a 500 V drain-source breakdown voltage, a 62 A continuous drain current at 25°C, and a maximum on-resistance of 100 mΩ at 25°C. The device includes a fast intrinsic diode, low gate charge, and low package inductance. Its thermal resistance from junction to case is 0.156 °C/W, and from case to sink is 0.05 °C/W. The case temperature range is -55 °C to 150 °C, and the package weighs 30 g. The device is rated for 500 V gate-drain voltage, ±30 V continuous gate-source voltage, 800 W power dissipation at 25°C, 5 J avalanche energy, and 2500 V RMS isolation voltage. Mounting torque for the base plate is 1.5 Nm.

Datasheet Summary
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The IXTN62N50L is an N-channel enhancement mode MOSFET designed for linear-mode operation with extended forward bias safe operating area (FBSOA) and avalanche capability. It features a miniBLOC package with aluminum nitride isolation, a 500 V drain-source breakdown voltage, a 62 A continuous drain current at 25°C, and a maximum on-resistance of 100 mΩ at 25°C. The device includes a fast intrinsic diode, low gate charge, and low package inductance. Its thermal resistance from junction to case is 0.156 °C/W, and from case to sink is 0.05 °C/W. The case temperature range is -55 °C to 150 °C, and the package weighs 30 g. The device is rated for 500 V gate-drain voltage, ±30 V continuous gate-source voltage, 800 W power dissipation at 25°C, 5 J avalanche energy, and 2500 V RMS isolation voltage. Mounting torque for the base plate is 1.5 Nm.

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Description
Supplier Links
200V - 2500V N-Channel Linear Power MOSFETs with Extended FBSOAs - IXTN62N50L - Littelfuse, Inc.
Rosemont, IL, United States
200V - 2500V N-Channel Linear Power MOSFETs with Extended FBSOAs
IXTN62N50L
200V - 2500V N-Channel Linear Power MOSFETs with Extended FBSOAs IXTN62N50L
When Power MOSFETs are used in the linear-mode operation, as opposed to their conventional switch-mode one, they are required to endure substantially high thermal and electrical stresses due to the simultaneous occurrence of high drain voltages and currents; these extreme stresses can cause typical devices to fail. Littelfuse Linear MOSFETs have been designed to address these kinds of device failures – the FBSOAs are “extended” when the positive feedback of electro-thermal instability is suppressed, giving rise to larger “operating windows.” The FBSOAs are guaranteed at 75°C. Designed for linear operation Guaranteed FBSOA at 75°C Avalanche rated International standard packages UL 94 V-0 Flammability qualified (molding epoxies)

When Power MOSFETs are used in the linear-mode operation, as opposed to their conventional switch-mode one, they are required to endure substantially high thermal and electrical stresses due to the simultaneous occurrence of high drain voltages and currents; these extreme stresses can cause typical devices to fail. Littelfuse Linear MOSFETs have been designed to address these kinds of device failures – the FBSOAs are “extended” when the positive feedback of electro-thermal instability is suppressed, giving rise to larger “operating windows.” The FBSOAs are guaranteed at 75°C. Designed for linear operation Guaranteed FBSOA at 75°C Avalanche rated International standard packages UL 94 V-0 Flammability qualified (molding epoxies)

Supplier's Site Datasheet
Singapore, Singapore
MOSFET Transistor
278-IXTN62N50L
MOSFET Transistor 278-IXTN62N50L
Power Field-Effect Transistor, Product overview: IXTN62N50L from Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXTN62N50L can be used for catalog matching and distributor lookup.

Power Field-Effect Transistor, Product overview: IXTN62N50L from Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXTN62N50L can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet

Technical Specifications

  Littelfuse, Inc. ERSAELECTRONICS PTE. LTD.
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number IXTN62N50L 278-IXTN62N50L
Product Name 200V - 2500V N-Channel Linear Power MOSFETs with Extended FBSOAs MOSFET Transistor
Polarity N-Channel
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