Littelfuse, Inc. 100V - 1200V N-Channel Standard Power MOSFETs IXTP1R4N100P

Description
Polar™ Standard Power MOSFETs are tailored to provide designers with a device solution that offers the best compromise between performance and cost. These devices incorporate the Polar technology platform to achieve low on-state resistances (Rdson). Polar Standard MOSFETs feature low gate charge Qg values, resulting in more efficient switching at all frequencies. This gives the designer the option to operate at higher frequencies, which enables the use of smaller passive components in a variety of load switching designs. The avalanche capabilities of these devices add an additional safeguard against over-voltage transients. Advantages: Easy to mount Space savings High power density International Standard Packages Dynamic dv/dt rating Low RDS(on) and Qg Avalanche Rated Low Package Inductance
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Description
Polar™ Standard Power MOSFETs are tailored to provide designers with a device solution that offers the best compromise between performance and cost. These devices incorporate the Polar technology platform to achieve low on-state resistances (Rdson). Polar Standard MOSFETs feature low gate charge Qg values, resulting in more efficient switching at all frequencies. This gives the designer the option to operate at higher frequencies, which enables the use of smaller passive components in a variety of load switching designs. The avalanche capabilities of these devices add an additional safeguard against over-voltage transients. Advantages: Easy to mount Space savings High power density International Standard Packages Dynamic dv/dt rating Low RDS(on) and Qg Avalanche Rated Low Package Inductance
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Datasheet
Datasheet Summary
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The IXTP1R4N100P is an N-channel enhancement mode MOSFET rated for 1000 V drain-source voltage and 1.4 A continuous drain current in a TO-220 package. It has a maximum on-state resistance of 11.8 Ω at 25°C and is avalanche rated with an individual energy rating of 100 mJ. The device features low gate charge (17.8 nC), low package inductance, and an integrated fast intrinsic rectifier. Maximum junction temperature is 150°C and thermal resistance from junction to case is 2.0 °C/W. It meets international standard package requirements and is suitable for DC-DC converters, switch-mode power supplies, motor drives, laser drivers, and robotics control applications.

Datasheet Summary
Powered by GS/AI

The IXTP1R4N100P is an N-channel enhancement mode MOSFET rated for 1000 V drain-source voltage and 1.4 A continuous drain current in a TO-220 package. It has a maximum on-state resistance of 11.8 Ω at 25°C and is avalanche rated with an individual energy rating of 100 mJ. The device features low gate charge (17.8 nC), low package inductance, and an integrated fast intrinsic rectifier. Maximum junction temperature is 150°C and thermal resistance from junction to case is 2.0 °C/W. It meets international standard package requirements and is suitable for DC-DC converters, switch-mode power supplies, motor drives, laser drivers, and robotics control applications.

Suppliers

Company
Product
Description
Supplier Links
100V - 1200V N-Channel Standard Power MOSFETs - IXTP1R4N100P - Littelfuse, Inc.
Rosemont, IL, United States
100V - 1200V N-Channel Standard Power MOSFETs
IXTP1R4N100P
100V - 1200V N-Channel Standard Power MOSFETs IXTP1R4N100P
Polar™ Standard Power MOSFETs are tailored to provide designers with a device solution that offers the best compromise between performance and cost. These devices incorporate the Polar technology platform to achieve low on-state resistances (Rdson). Polar Standard MOSFETs feature low gate charge Qg values, resulting in more efficient switching at all frequencies. This gives the designer the option to operate at higher frequencies, which enables the use of smaller passive components in a variety of load switching designs. The avalanche capabilities of these devices add an additional safeguard against over-voltage transients. Advantages: Easy to mount Space savings High power density International Standard Packages Dynamic dv/dt rating Low RDS(on) and Qg Avalanche Rated Low Package Inductance

Polar™ Standard Power MOSFETs are tailored to provide designers with a device solution that offers the best compromise between performance and cost. These devices incorporate the Polar technology platform to achieve low on-state resistances (Rdson). Polar Standard MOSFETs feature low gate charge Qg values, resulting in more efficient switching at all frequencies. This gives the designer the option to operate at higher frequencies, which enables the use of smaller passive components in a variety of load switching designs. The avalanche capabilities of these devices add an additional safeguard against over-voltage transients. Advantages: Easy to mount Space savings High power density International Standard Packages Dynamic dv/dt rating Low RDS(on) and Qg Avalanche Rated Low Package Inductance

Supplier's Site Datasheet
Singapore, Singapore
N-Channel 1.4A 1000V 11ohm MOSFET Transistor
278-IXTP1R4N100P
N-Channel 1.4A 1000V 11ohm MOSFET Transistor 278-IXTP1R4N100P
Power Field-Effect Transistor, 1.4A I(D), 1000V, 11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN Product overview: IXTP1R4N100P from Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 1.4A, 1000V, 11ohm, TO-220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 1.4A, 1000V, 11ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXTP1R4N100P can be used for catalog matching and distributor lookup.

Power Field-Effect Transistor, 1.4A I(D), 1000V, 11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN Product overview: IXTP1R4N100P from Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 1.4A, 1000V, 11ohm, TO-220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 1.4A, 1000V, 11ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXTP1R4N100P can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet

Technical Specifications

  Littelfuse, Inc. ERSAELECTRONICS PTE. LTD.
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number IXTP1R4N100P 278-IXTP1R4N100P
Product Name 100V - 1200V N-Channel Standard Power MOSFETs N-Channel 1.4A 1000V 11ohm MOSFET Transistor
Polarity N-Channel
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