The IXTH180N10T is an N-channel enhancement mode MOSFET designed for high current switching in automotive, motor drives, and 48V power systems. It is packaged in a TO-247 case, measuring 20.80 to 21.46 mm in length, with a drain tab for thermal conduction. The device has a drain-source breakdown voltage of 100 V, continuous drain current of 180 A at 25°C, and a maximum on-resistance of 6.4 mΩ at 10 V gate-source voltage. It supports an avalanche energy of 750 mJ and operates at junction temperatures from -55°C to 175°C. The MOSFET is avalanche rated and features low package inductance and unclamped inductive switching capability.
Trench Gate Power MOSFETs are ideally suited for low voltage/ high current applications, requiring an exceedingly low RDS(on), thus guaranteeing very low power Dissipation. This, combined with wide ranging operating junction temperature from -40 °C to 175 °C make them suitable candidates for automobile applications and other similar demanding applications in harsh environments. Advantages: Easy to Mount Space Savings High power density International Standard Packages Low RDS(ON) Avalanche rated High Current Handling Capability Fast Intrinsic Rectifier
Power Field-Effect Transistor, Product overview: IXTH180N10T from Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXTH180N10T can be used for catalog matching and distributor lookup.
| Littelfuse, Inc. | ERSAELECTRONICS PTE. LTD. | |
|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IXTH180N10T | 278-IXTH180N10T |
| Product Name | 55V - 300V Trench Gate Power MOSFETs with HiPerFET™ Options | MOSFET Transistor |
| Polarity | N-Channel |
