The IXTP36P15P is a P-channel enhancement mode MOSFET designed for high-side switching, push-pull amplifiers, DC choppers, and current regulators. It is packaged in a TO-220AB case, measuring 15.75 to 16.26 mm in width, 20.80 to 21.46 mm in length, and 4.7 to 5.3 mm in height. The device has a maximum drain-source voltage of -150 V, a continuous drain current of -36 A at 25°C, and a maximum on-state resistance of 110 mΩ at -10 V gate-source voltage. It is avalanche rated with an energy rating of 1.5 J and has a maximum junction temperature of 150°C. The thermal resistance from junction to case is 0.42 °C/W. The device complies with the international standard package formats and features a low package inductance, fast intrinsic diode, and dynamic dv/dt rating. It is rated for operating temperatures from -55°C to +150°C and meets the RoHS requirements.
Polar™ P-Channel MOSFETS are fabricated using our Polar technology platform, which significantly reduces the on-state resistance (RDSon) by 30% and gate charge (Qg) by 40% in comparison to legacy counterparts, resulting in lower conduction loss and providing excellent switching performance. They are dynamic dv/dt and avalanche rated making them extremely rugged in demanding operating environments and can easily be paralleled due to an on-state resistance with positive temperature coefficient. These MOSFETs are ideal in a variety of applications, with best-in-class performance and competitive pricing. Applications include push-pull amplifiers, buck converters, DC choppers, power solid state relays, CMOS high power amplifiers, high current regulators, and high side switching in automotive and test equipment. The superior ruggedness of the Polar P-Channel Power MOSFETs also makes them suitable devices for motor control and power cut-off switches or power SSRs for energy saving applications. Advantages: Low gate charge results in simple drive requirement High power density Easy to parallel Fast switching Fast intrinsic diode Rugged PolarP™ process Avalanche rated Low package inductance Dynamic dv/dt rated
Power Field-Effect Transistor, Product overview: IXTP36P15P from Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXTP36P15P can be used for catalog matching and distributor lookup.
| Littelfuse, Inc. | ERSAELECTRONICS PTE. LTD. | |
|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IXTP36P15P | 278-IXTP36P15P |
| Product Name | -100V to -600V P-Channel Power MOSFETs | MOSFET Transistor |
| Polarity | P-Channel |
