Littelfuse, Inc. 40V - 175V Trench Gate Power MOSFETs with HiPerFET™ Options IXTP70N075T2

Description
These devices are offered with drain-to-source voltage ratings from 40V to 170V and provide high current capabilities of up to 600 Amperes (Tc=@25oC). The combined high current ratings of these devices and available compact package options provide designers the ability to control more power within a smaller footprint. Furthermore, these devices promote device consolidation through the reduction or elimination of multiple paralleled lower current rated MOSFET devices in high power switching applications. The resultant effect is a reduction in part count, as well as the number of required drive components, thus improving upon over-all system simplicity, reliability, and cost. Advantages: Eliminates multiple paralleled lower current rated MOSFET devices Provides the ability to control more power within a smaller footprint Improves overall system reliability and cost High current capability (up to 600A) Low RDS(ON) and gate charge (Qg) Incorporates Littelfuse HiPerFETTM technology for fast power switching performance Avalanches capabilities
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Description
These devices are offered with drain-to-source voltage ratings from 40V to 170V and provide high current capabilities of up to 600 Amperes (Tc=@25oC). The combined high current ratings of these devices and available compact package options provide designers the ability to control more power within a smaller footprint. Furthermore, these devices promote device consolidation through the reduction or elimination of multiple paralleled lower current rated MOSFET devices in high power switching applications. The resultant effect is a reduction in part count, as well as the number of required drive components, thus improving upon over-all system simplicity, reliability, and cost. Advantages: Eliminates multiple paralleled lower current rated MOSFET devices Provides the ability to control more power within a smaller footprint Improves overall system reliability and cost High current capability (up to 600A) Low RDS(ON) and gate charge (Qg) Incorporates Littelfuse HiPerFETTM technology for fast power switching performance Avalanches capabilities
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Datasheet
Datasheet Summary
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The IXTP70N075T2 is an N-channel enhancement mode MOSFET designed for high current switching applications such as automotive engine control, synchronous buck converters, and DC/DC conversion. It is packaged in a TO-220 case, weighing 3.0 g, and features a drain-source voltage rating of 75 V and a continuous drain current of 70 A at 25°C. The device has a maximum RDS(on) of 12 mΩ at VGS=10V and ID=25A, and is rated for a maximum junction temperature of 175°C. It is avalanche rated, compliant with RoHS standards, and includes a fast intrinsic rectifier. Thermal resistance from junction to case is 0.50 °C/W for the TO-220 package.

Datasheet Summary
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The IXTP70N075T2 is an N-channel enhancement mode MOSFET designed for high current switching applications such as automotive engine control, synchronous buck converters, and DC/DC conversion. It is packaged in a TO-220 case, weighing 3.0 g, and features a drain-source voltage rating of 75 V and a continuous drain current of 70 A at 25°C. The device has a maximum RDS(on) of 12 mΩ at VGS=10V and ID=25A, and is rated for a maximum junction temperature of 175°C. It is avalanche rated, compliant with RoHS standards, and includes a fast intrinsic rectifier. Thermal resistance from junction to case is 0.50 °C/W for the TO-220 package.

Suppliers

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Product
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Supplier Links
40V - 175V Trench Gate Power MOSFETs with HiPerFET™ Options - IXTP70N075T2 - Littelfuse, Inc.
Rosemont, IL, United States
40V - 175V Trench Gate Power MOSFETs with HiPerFET™ Options
IXTP70N075T2
40V - 175V Trench Gate Power MOSFETs with HiPerFET™ Options IXTP70N075T2
These devices are offered with drain-to-source voltage ratings from 40V to 170V and provide high current capabilities of up to 600 Amperes (Tc=@25oC). The combined high current ratings of these devices and available compact package options provide designers the ability to control more power within a smaller footprint. Furthermore, these devices promote device consolidation through the reduction or elimination of multiple paralleled lower current rated MOSFET devices in high power switching applications. The resultant effect is a reduction in part count, as well as the number of required drive components, thus improving upon over-all system simplicity, reliability, and cost. Advantages: Eliminates multiple paralleled lower current rated MOSFET devices Provides the ability to control more power within a smaller footprint Improves overall system reliability and cost High current capability (up to 600A) Low RDS(ON) and gate charge (Qg) Incorporates Littelfuse HiPerFETTM technology for fast power switching performance Avalanches capabilities

These devices are offered with drain-to-source voltage ratings from 40V to 170V and provide high current capabilities of up to 600 Amperes (Tc=@25oC). The combined high current ratings of these devices and available compact package options provide designers the ability to control more power within a smaller footprint. Furthermore, these devices promote device consolidation through the reduction or elimination of multiple paralleled lower current rated MOSFET devices in high power switching applications. The resultant effect is a reduction in part count, as well as the number of required drive components, thus improving upon over-all system simplicity, reliability, and cost. Advantages: Eliminates multiple paralleled lower current rated MOSFET devices Provides the ability to control more power within a smaller footprint Improves overall system reliability and cost High current capability (up to 600A) Low RDS(ON) and gate charge (Qg) Incorporates Littelfuse HiPerFETTM technology for fast power switching performance Avalanches capabilities

Supplier's Site Datasheet
Singapore, Singapore
MOSFET Transistor
278-IXTP70N075T2
MOSFET Transistor 278-IXTP70N075T2
Power Field-Effect Transistor, Product overview: IXTP70N075T2 from Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXTP70N075T2 can be used for catalog matching and distributor lookup.

Power Field-Effect Transistor, Product overview: IXTP70N075T2 from Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXTP70N075T2 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet

Technical Specifications

  Littelfuse, Inc. ERSAELECTRONICS PTE. LTD.
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number IXTP70N075T2 278-IXTP70N075T2
Product Name 40V - 175V Trench Gate Power MOSFETs with HiPerFET™ Options MOSFET Transistor
Polarity N-Channel
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