Littelfuse, Inc. 100V - 1500V N-Channel Standard Power MOSFETs IXTH3N120

Description
The High Voltage series of N-Channel Standard MOSFETs are suitable for a wide variety of power switching systems, including high-voltage power supplies, capacitor discharge circuits, pulse circuits, and current regulators. Advantages: Easy to mount Space savings High power density International standard packages Fast switching times Avalanche rated Rugged Polysilicon Gate Cell structure Ultra-low RDS(on)
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Description
The High Voltage series of N-Channel Standard MOSFETs are suitable for a wide variety of power switching systems, including high-voltage power supplies, capacitor discharge circuits, pulse circuits, and current regulators. Advantages: Easy to mount Space savings High power density International standard packages Fast switching times Avalanche rated Rugged Polysilicon Gate Cell structure Ultra-low RDS(on)
Request a Quote
Datasheet
Datasheet Summary
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The IXTH3N120 is an N-channel enhancement mode MOSFET designed for high-voltage switching applications such as power supplies, capacitor discharge, and pulse circuits. It comes in a TO-247 package, measures 15.88 mm in length and 10.41 mm in width, and weighs 6.0 g. The device has a drain-source breakdown voltage of 1200 V, continuous drain current of 3 A at 25°C, and a maximum on-resistance of 4.5 Ω at 10 V gate drive. It is avalanche rated with a single-pulse avalanche energy of 700 mJ and a dv/dt rating of 5 V/ns. The molding epoxy meets UL 94 V-0 flammability classification. Thermal resistance from junction to case is 0.21 °C/W. Operating junction and storage temperatures range from -55°C to 150°C. The part is compliant with international standard packages and features a fast intrinsic diode.

Datasheet Summary
Powered by GS/AI

The IXTH3N120 is an N-channel enhancement mode MOSFET designed for high-voltage switching applications such as power supplies, capacitor discharge, and pulse circuits. It comes in a TO-247 package, measures 15.88 mm in length and 10.41 mm in width, and weighs 6.0 g. The device has a drain-source breakdown voltage of 1200 V, continuous drain current of 3 A at 25°C, and a maximum on-resistance of 4.5 Ω at 10 V gate drive. It is avalanche rated with a single-pulse avalanche energy of 700 mJ and a dv/dt rating of 5 V/ns. The molding epoxy meets UL 94 V-0 flammability classification. Thermal resistance from junction to case is 0.21 °C/W. Operating junction and storage temperatures range from -55°C to 150°C. The part is compliant with international standard packages and features a fast intrinsic diode.

Suppliers

Company
Product
Description
Supplier Links
100V - 1500V N-Channel Standard Power MOSFETs - IXTH3N120 - Littelfuse, Inc.
Rosemont, IL, United States
100V - 1500V N-Channel Standard Power MOSFETs
IXTH3N120
100V - 1500V N-Channel Standard Power MOSFETs IXTH3N120
The High Voltage series of N-Channel Standard MOSFETs are suitable for a wide variety of power switching systems, including high-voltage power supplies, capacitor discharge circuits, pulse circuits, and current regulators. Advantages: Easy to mount Space savings High power density International standard packages Fast switching times Avalanche rated Rugged Polysilicon Gate Cell structure Ultra-low RDS(on)

The High Voltage series of N-Channel Standard MOSFETs are suitable for a wide variety of power switching systems, including high-voltage power supplies, capacitor discharge circuits, pulse circuits, and current regulators. Advantages: Easy to mount Space savings High power density International standard packages Fast switching times Avalanche rated Rugged Polysilicon Gate Cell structure Ultra-low RDS(on)

Supplier's Site Datasheet
Singapore, Singapore
MOSFET Transistor
278-IXTH3N120
MOSFET Transistor 278-IXTH3N120
Power Field-Effect Transistor, Product overview: IXTH3N120 from Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXTH3N120 can be used for catalog matching and distributor lookup.

Power Field-Effect Transistor, Product overview: IXTH3N120 from Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXTH3N120 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet

Technical Specifications

  Littelfuse, Inc. ERSAELECTRONICS PTE. LTD.
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number IXTH3N120 278-IXTH3N120
Product Name 100V - 1500V N-Channel Standard Power MOSFETs MOSFET Transistor
Polarity N-Channel
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