Littelfuse, Inc. 100V - 1200V N-Channel Standard Power MOSFETs IXTP14N60PM

Description
Polar™ Standard Power MOSFETs are tailored to provide designers with a device solution that offers the best compromise between performance and cost. These devices incorporate the Polar technology platform to achieve low on-state resistances (Rdson). Polar Standard MOSFETs feature low gate charge Qg values, resulting in more efficient switching at all frequencies. This gives the designer the option to operate at higher frequencies, which enables the use of smaller passive components in a variety of load switching designs. The avalanche capabilities of these devices add an additional safeguard against over-voltage transients. Advantages: Easy to mount Space savings High power density International Standard Packages Dynamic dv/dt rating Low RDS(on) and Qg Avalanche Rated Low Package Inductance
Request a Quote
Description
Polar™ Standard Power MOSFETs are tailored to provide designers with a device solution that offers the best compromise between performance and cost. These devices incorporate the Polar technology platform to achieve low on-state resistances (Rdson). Polar Standard MOSFETs feature low gate charge Qg values, resulting in more efficient switching at all frequencies. This gives the designer the option to operate at higher frequencies, which enables the use of smaller passive components in a variety of load switching designs. The avalanche capabilities of these devices add an additional safeguard against over-voltage transients. Advantages: Easy to mount Space savings High power density International Standard Packages Dynamic dv/dt rating Low RDS(on) and Qg Avalanche Rated Low Package Inductance
Request a Quote
Datasheet
Datasheet Summary
Powered by GS/AI

The IXTP14N60PM is an N-channel enhancement mode MOSFET rated for 600 V drain-source voltage and 7 A continuous drain current at 25°C, with a maximum on-state resistance of 550 mΩ. It features an isolated tab, avalanche capability, and a fast intrinsic diode in an ISOLATED TO-220 package. The device is rated for a junction temperature range of -55°C to 150°C and has a thermal resistance of 1.66 °C/W from junction to case. It meets AEC-Q200 qualifications and is designed for switched-mode and resonant-mode power supplies, DC-DC converters, laser drivers, and motor drives. The package weighs 2.5 g and has a mounting torque of 1.13 Nm (10 lb.in.).

Datasheet Summary
Powered by GS/AI

The IXTP14N60PM is an N-channel enhancement mode MOSFET rated for 600 V drain-source voltage and 7 A continuous drain current at 25°C, with a maximum on-state resistance of 550 mΩ. It features an isolated tab, avalanche capability, and a fast intrinsic diode in an ISOLATED TO-220 package. The device is rated for a junction temperature range of -55°C to 150°C and has a thermal resistance of 1.66 °C/W from junction to case. It meets AEC-Q200 qualifications and is designed for switched-mode and resonant-mode power supplies, DC-DC converters, laser drivers, and motor drives. The package weighs 2.5 g and has a mounting torque of 1.13 Nm (10 lb.in.).

Suppliers

Company
Product
Description
Supplier Links
100V - 1200V N-Channel Standard Power MOSFETs - IXTP14N60PM - Littelfuse, Inc.
Rosemont, IL, United States
100V - 1200V N-Channel Standard Power MOSFETs
IXTP14N60PM
100V - 1200V N-Channel Standard Power MOSFETs IXTP14N60PM
Polar™ Standard Power MOSFETs are tailored to provide designers with a device solution that offers the best compromise between performance and cost. These devices incorporate the Polar technology platform to achieve low on-state resistances (Rdson). Polar Standard MOSFETs feature low gate charge Qg values, resulting in more efficient switching at all frequencies. This gives the designer the option to operate at higher frequencies, which enables the use of smaller passive components in a variety of load switching designs. The avalanche capabilities of these devices add an additional safeguard against over-voltage transients. Advantages: Easy to mount Space savings High power density International Standard Packages Dynamic dv/dt rating Low RDS(on) and Qg Avalanche Rated Low Package Inductance

Polar™ Standard Power MOSFETs are tailored to provide designers with a device solution that offers the best compromise between performance and cost. These devices incorporate the Polar technology platform to achieve low on-state resistances (Rdson). Polar Standard MOSFETs feature low gate charge Qg values, resulting in more efficient switching at all frequencies. This gives the designer the option to operate at higher frequencies, which enables the use of smaller passive components in a variety of load switching designs. The avalanche capabilities of these devices add an additional safeguard against over-voltage transients. Advantages: Easy to mount Space savings High power density International Standard Packages Dynamic dv/dt rating Low RDS(on) and Qg Avalanche Rated Low Package Inductance

Supplier's Site Datasheet
Singapore, Singapore
N-Channel 7A 600V 0.55ohm MOSFET Transistor
278-IXTP14N60PM
N-Channel 7A 600V 0.55ohm MOSFET Transistor 278-IXTP14N60PM
Power Field-Effect Transistor, 7A I(D), 600V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN Product overview: IXTP14N60PM from Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 7A, 600V, 0.55ohm, TO-220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 7A, 600V, 0.55ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXTP14N60PM can be used for catalog matching and distributor lookup.

Power Field-Effect Transistor, 7A I(D), 600V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN Product overview: IXTP14N60PM from Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 7A, 600V, 0.55ohm, TO-220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 7A, 600V, 0.55ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXTP14N60PM can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet

Technical Specifications

  Littelfuse, Inc. ERSAELECTRONICS PTE. LTD.
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number IXTP14N60PM 278-IXTP14N60PM
Product Name 100V - 1200V N-Channel Standard Power MOSFETs N-Channel 7A 600V 0.55ohm MOSFET Transistor
Polarity N-Channel
Unlock Full Specs
to access all available technical data

Similar Products

Power - MOSFET (Si/SiC) - Silicon Carbide CoolSiC™ MOSFET - Silicon Carbide MOSFET Discretes - AIMBG75R020M1H - AIMBG75R020M1H - Infineon Technologies AG
Specs
Polarity N-Channel; N
Transistor Technology / Material Silicon carbide
TJ -55 to 175 C (-67 to 347 F)
View Details
N-channel TrenchMOS intermediate level FET - BST82,215 - Nexperia B.V.
Specs
Package Type SOT23; SOT23 SOT23
View Details
7 suppliers
CSD16340Q3 25V, N Channel NexFET? Power MOSFET - CSD16340Q3T - Texas Instruments
Specs
Polarity N-Channel
V(BR)DSS 25 volts
rDS(on) 0.0055 ohms
View Details
6 suppliers