Littelfuse, Inc. 55V - 300V Trench Gate Power MOSFETs with HiPerFET™ Options IXTP44N10T

Description
Trench Gate Power MOSFETs are ideally suited for low voltage/ high current applications, requiring an exceedingly low RDS(on), thus guaranteeing very low power Dissipation. This, combined with wide ranging operating junction temperature from -40 °C to 175 °C make them suitable candidates for automobile applications and other similar demanding applications in harsh environments. Advantages: Easy to Mount Space Savings High power density International Standard Packages Low RDS(ON) Avalanche rated High Current Handling Capability Fast Intrinsic Rectifier
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Description
Trench Gate Power MOSFETs are ideally suited for low voltage/ high current applications, requiring an exceedingly low RDS(on), thus guaranteeing very low power Dissipation. This, combined with wide ranging operating junction temperature from -40 °C to 175 °C make them suitable candidates for automobile applications and other similar demanding applications in harsh environments. Advantages: Easy to Mount Space Savings High power density International Standard Packages Low RDS(ON) Avalanche rated High Current Handling Capability Fast Intrinsic Rectifier
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Datasheet
Datasheet Summary
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The IXTP44N10T is an N-channel enhancement mode MOSFET in a TO-220 package, rated for 100V drain-source voltage and 44A continuous drain current at 25°C. It features a maximum on-resistance of 30 mΩ at 10V gate-source voltage and 22A drain current, with an avalanche energy rating of 250 mJ. The device supports junction temperatures from -55°C to 175°C and requires a maximum lead temperature of 260°C for 10 seconds during soldering. It is avalanche rated and designed for high current switching, automotive, and DC/DC conversion applications. Weight is 3.00 g. The TO-220 mounting torque is 1.13 Nm (10 lb.in.).

Datasheet Summary
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The IXTP44N10T is an N-channel enhancement mode MOSFET in a TO-220 package, rated for 100V drain-source voltage and 44A continuous drain current at 25°C. It features a maximum on-resistance of 30 mΩ at 10V gate-source voltage and 22A drain current, with an avalanche energy rating of 250 mJ. The device supports junction temperatures from -55°C to 175°C and requires a maximum lead temperature of 260°C for 10 seconds during soldering. It is avalanche rated and designed for high current switching, automotive, and DC/DC conversion applications. Weight is 3.00 g. The TO-220 mounting torque is 1.13 Nm (10 lb.in.).

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Supplier Links
55V - 300V Trench Gate Power MOSFETs with HiPerFET™ Options - IXTP44N10T - Littelfuse, Inc.
Rosemont, IL, United States
55V - 300V Trench Gate Power MOSFETs with HiPerFET™ Options
IXTP44N10T
55V - 300V Trench Gate Power MOSFETs with HiPerFET™ Options IXTP44N10T
Trench Gate Power MOSFETs are ideally suited for low voltage/ high current applications, requiring an exceedingly low RDS(on), thus guaranteeing very low power Dissipation. This, combined with wide ranging operating junction temperature from -40 °C to 175 °C make them suitable candidates for automobile applications and other similar demanding applications in harsh environments. Advantages: Easy to Mount Space Savings High power density International Standard Packages Low RDS(ON) Avalanche rated High Current Handling Capability Fast Intrinsic Rectifier

Trench Gate Power MOSFETs are ideally suited for low voltage/ high current applications, requiring an exceedingly low RDS(on), thus guaranteeing very low power Dissipation. This, combined with wide ranging operating junction temperature from -40 °C to 175 °C make them suitable candidates for automobile applications and other similar demanding applications in harsh environments. Advantages: Easy to Mount Space Savings High power density International Standard Packages Low RDS(ON) Avalanche rated High Current Handling Capability Fast Intrinsic Rectifier

Supplier's Site Datasheet
Singapore, Singapore
MOSFET Transistor
278-IXTP44N10T
MOSFET Transistor 278-IXTP44N10T
Power Field-Effect Transistor, Product overview: IXTP44N10T from Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXTP44N10T can be used for catalog matching and distributor lookup.

Power Field-Effect Transistor, Product overview: IXTP44N10T from Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXTP44N10T can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet

Technical Specifications

  Littelfuse, Inc. ERSAELECTRONICS PTE. LTD.
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number IXTP44N10T 278-IXTP44N10T
Product Name 55V - 300V Trench Gate Power MOSFETs with HiPerFET™ Options MOSFET Transistor
Polarity N-Channel
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