The IXTT26N60P is an N-channel enhancement mode MOSFET with a 600 V drain-source breakdown voltage and a continuous drain current of 26 A at 25°C. It is packaged in a TO-268 format with a weight of 5.0 g. The device has a maximum on-state resistance of 270 mΩ at 25°C and is rated for avalanche energy up to 1.2 J. It supports an unclamped inductive switching rating and features low package inductance and fast recovery body diode. The junction temperature range is -55°C to 150°C, and the thermal resistance from junction to case is 0.27°C/W. The device is avalanche rated and meets international standard package requirements.
Polar™ Standard Power MOSFETs are tailored to provide designers with a device solution that offers the best compromise between performance and cost. These devices incorporate the Polar technology platform to achieve low on-state resistances (Rdson). Polar Standard MOSFETs feature low gate charge Qg values, resulting in more efficient switching at all frequencies. This gives the designer the option to operate at higher frequencies, which enables the use of smaller passive components in a variety of load switching designs. The avalanche capabilities of these devices add an additional safeguard against over-voltage transients. Advantages: Easy to mount Space savings High power density International Standard Packages Dynamic dv/dt rating Low RDS(on) and Qg Avalanche Rated Low Package Inductance
Power Field-Effect Transistor, 26A I(D), 600V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268AA, TO-268, 3 PIN Product overview: IXTT26N60P from Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 26A, 600V, 0.27ohm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 26A, 600V, 0.27ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXTT26N60P can be used for catalog matching and distributor lookup.
| Littelfuse, Inc. | ERSAELECTRONICS PTE. LTD. | |
|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IXTT26N60P | 278-IXTT26N60P |
| Product Name | 100V - 1200V N-Channel Standard Power MOSFETs | N-Channel 26A 600V 0.27ohm MOSFET Transistor |
| Polarity | N-Channel |
