Littelfuse, Inc. 100V - 1200V N-Channel Standard Power MOSFETs IXTP12N50P

Description
Polar™ Standard Power MOSFETs are tailored to provide designers with a device solution that offers the best compromise between performance and cost. These devices incorporate the Polar technology platform to achieve low on-state resistances (Rdson). Polar Standard MOSFETs feature low gate charge Qg values, resulting in more efficient switching at all frequencies. This gives the designer the option to operate at higher frequencies, which enables the use of smaller passive components in a variety of load switching designs. The avalanche capabilities of these devices add an additional safeguard against over-voltage transients. Advantages: Easy to mount Space savings High power density International Standard Packages Dynamic dv/dt rating Low RDS(on) and Qg Avalanche Rated Low Package Inductance
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Description
Polar™ Standard Power MOSFETs are tailored to provide designers with a device solution that offers the best compromise between performance and cost. These devices incorporate the Polar technology platform to achieve low on-state resistances (Rdson). Polar Standard MOSFETs feature low gate charge Qg values, resulting in more efficient switching at all frequencies. This gives the designer the option to operate at higher frequencies, which enables the use of smaller passive components in a variety of load switching designs. The avalanche capabilities of these devices add an additional safeguard against over-voltage transients. Advantages: Easy to mount Space savings High power density International Standard Packages Dynamic dv/dt rating Low RDS(on) and Qg Avalanche Rated Low Package Inductance
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Datasheet
Datasheet Summary
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The IXTP12N50P is an N-channel enhancement mode MOSFET rated for 500V drain-source voltage and 12A continuous drain current, designed for high-speed switching applications such as DC-DC converters, battery chargers, and AC motor drives. It is packaged in a TO-220AB case, weighs 3.0 g, and features a maximum on-state resistance of 500 mΩ at 25°C. The device is avalanche rated, has a fast intrinsic rectifier, and supports a transient gate-source voltage of ±40 V. It meets the AEC-Q200 qualification standard and is designed for operation from -55°C to +150°C junction temperature. Thermal resistance from junction to case is 0.50 °C/W. The package has low inductance and low gate charge for efficient switching.

Datasheet Summary
Powered by GS/AI

The IXTP12N50P is an N-channel enhancement mode MOSFET rated for 500V drain-source voltage and 12A continuous drain current, designed for high-speed switching applications such as DC-DC converters, battery chargers, and AC motor drives. It is packaged in a TO-220AB case, weighs 3.0 g, and features a maximum on-state resistance of 500 mΩ at 25°C. The device is avalanche rated, has a fast intrinsic rectifier, and supports a transient gate-source voltage of ±40 V. It meets the AEC-Q200 qualification standard and is designed for operation from -55°C to +150°C junction temperature. Thermal resistance from junction to case is 0.50 °C/W. The package has low inductance and low gate charge for efficient switching.

Suppliers

Company
Product
Description
Supplier Links
100V - 1200V N-Channel Standard Power MOSFETs - IXTP12N50P - Littelfuse, Inc.
Rosemont, IL, United States
100V - 1200V N-Channel Standard Power MOSFETs
IXTP12N50P
100V - 1200V N-Channel Standard Power MOSFETs IXTP12N50P
Polar™ Standard Power MOSFETs are tailored to provide designers with a device solution that offers the best compromise between performance and cost. These devices incorporate the Polar technology platform to achieve low on-state resistances (Rdson). Polar Standard MOSFETs feature low gate charge Qg values, resulting in more efficient switching at all frequencies. This gives the designer the option to operate at higher frequencies, which enables the use of smaller passive components in a variety of load switching designs. The avalanche capabilities of these devices add an additional safeguard against over-voltage transients. Advantages: Easy to mount Space savings High power density International Standard Packages Dynamic dv/dt rating Low RDS(on) and Qg Avalanche Rated Low Package Inductance

Polar™ Standard Power MOSFETs are tailored to provide designers with a device solution that offers the best compromise between performance and cost. These devices incorporate the Polar technology platform to achieve low on-state resistances (Rdson). Polar Standard MOSFETs feature low gate charge Qg values, resulting in more efficient switching at all frequencies. This gives the designer the option to operate at higher frequencies, which enables the use of smaller passive components in a variety of load switching designs. The avalanche capabilities of these devices add an additional safeguard against over-voltage transients. Advantages: Easy to mount Space savings High power density International Standard Packages Dynamic dv/dt rating Low RDS(on) and Qg Avalanche Rated Low Package Inductance

Supplier's Site Datasheet
Singapore, Singapore
N-Channel 12A 500V 0.5ohm MOSFET Transistor
278-IXTP12N50P
N-Channel 12A 500V 0.5ohm MOSFET Transistor 278-IXTP12N50P
Power Field-Effect Transistor, 12A I(D), 500V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN Product overview: IXTP12N50P from Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 12A, 500V, 0.5ohm, TO-220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 12A, 500V, 0.5ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXTP12N50P can be used for catalog matching and distributor lookup.

Power Field-Effect Transistor, 12A I(D), 500V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN Product overview: IXTP12N50P from Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 12A, 500V, 0.5ohm, TO-220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 12A, 500V, 0.5ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXTP12N50P can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet

Technical Specifications

  Littelfuse, Inc. ERSAELECTRONICS PTE. LTD.
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number IXTP12N50P 278-IXTP12N50P
Product Name 100V - 1200V N-Channel Standard Power MOSFETs N-Channel 12A 500V 0.5ohm MOSFET Transistor
Polarity N-Channel
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