Littelfuse, Inc. 100V - 1200V N-Channel Standard Power MOSFETs IXTQ96N15P

Description
Polar™ Standard Power MOSFETs are tailored to provide designers with a device solution that offers the best compromise between performance and cost. These devices incorporate the Polar technology platform to achieve low on-state resistances (Rdson). Polar Standard MOSFETs feature low gate charge Qg values, resulting in more efficient switching at all frequencies. This gives the designer the option to operate at higher frequencies, which enables the use of smaller passive components in a variety of load switching designs. The avalanche capabilities of these devices add an additional safeguard against over-voltage transients. Advantages: Easy to mount Space savings High power density International Standard Packages Dynamic dv/dt rating Low RDS(on) and Qg Avalanche Rated Low Package Inductance
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Description
Polar™ Standard Power MOSFETs are tailored to provide designers with a device solution that offers the best compromise between performance and cost. These devices incorporate the Polar technology platform to achieve low on-state resistances (Rdson). Polar Standard MOSFETs feature low gate charge Qg values, resulting in more efficient switching at all frequencies. This gives the designer the option to operate at higher frequencies, which enables the use of smaller passive components in a variety of load switching designs. The avalanche capabilities of these devices add an additional safeguard against over-voltage transients. Advantages: Easy to mount Space savings High power density International Standard Packages Dynamic dv/dt rating Low RDS(on) and Qg Avalanche Rated Low Package Inductance
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Datasheet
Datasheet Summary
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The IXTQ96N15P is an N-channel enhancement mode MOSFET designed for high-power switching applications, rated at 150 V drain-source breakdown voltage and 96 A continuous drain current. It is available in a TO-3P package, weighing 5.5 g, with a maximum junction temperature of 175°C and a thermal resistance from junction to case of 0.31°C/W. The device has a typical on-resistance of 24 mΩ at 25°C and 10 V gate-source voltage, and is avalanche rated with a single-pulse energy absorption of 40 mJ at 25°C. It features low package inductance, low gate charge, and complies with unclamped inductive switching (UIS) requirements. The part is rated for operation from -55°C to 175°C and is designed for space-efficient, high-power-density applications.

Datasheet Summary
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The IXTQ96N15P is an N-channel enhancement mode MOSFET designed for high-power switching applications, rated at 150 V drain-source breakdown voltage and 96 A continuous drain current. It is available in a TO-3P package, weighing 5.5 g, with a maximum junction temperature of 175°C and a thermal resistance from junction to case of 0.31°C/W. The device has a typical on-resistance of 24 mΩ at 25°C and 10 V gate-source voltage, and is avalanche rated with a single-pulse energy absorption of 40 mJ at 25°C. It features low package inductance, low gate charge, and complies with unclamped inductive switching (UIS) requirements. The part is rated for operation from -55°C to 175°C and is designed for space-efficient, high-power-density applications.

Suppliers

Company
Product
Description
Supplier Links
100V - 1200V N-Channel Standard Power MOSFETs - IXTQ96N15P - Littelfuse, Inc.
Rosemont, IL, United States
100V - 1200V N-Channel Standard Power MOSFETs
IXTQ96N15P
100V - 1200V N-Channel Standard Power MOSFETs IXTQ96N15P
Polar™ Standard Power MOSFETs are tailored to provide designers with a device solution that offers the best compromise between performance and cost. These devices incorporate the Polar technology platform to achieve low on-state resistances (Rdson). Polar Standard MOSFETs feature low gate charge Qg values, resulting in more efficient switching at all frequencies. This gives the designer the option to operate at higher frequencies, which enables the use of smaller passive components in a variety of load switching designs. The avalanche capabilities of these devices add an additional safeguard against over-voltage transients. Advantages: Easy to mount Space savings High power density International Standard Packages Dynamic dv/dt rating Low RDS(on) and Qg Avalanche Rated Low Package Inductance

Polar™ Standard Power MOSFETs are tailored to provide designers with a device solution that offers the best compromise between performance and cost. These devices incorporate the Polar technology platform to achieve low on-state resistances (Rdson). Polar Standard MOSFETs feature low gate charge Qg values, resulting in more efficient switching at all frequencies. This gives the designer the option to operate at higher frequencies, which enables the use of smaller passive components in a variety of load switching designs. The avalanche capabilities of these devices add an additional safeguard against over-voltage transients. Advantages: Easy to mount Space savings High power density International Standard Packages Dynamic dv/dt rating Low RDS(on) and Qg Avalanche Rated Low Package Inductance

Supplier's Site Datasheet
Singapore, Singapore
N-Channel 96A 150V 0.024ohm MOSFET Transistor
278-IXTQ96N15P
N-Channel 96A 150V 0.024ohm MOSFET Transistor 278-IXTQ96N15P
Power Field-Effect Transistor, 96A I(D), 150V, 0.024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN Product overview: IXTQ96N15P from Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 96A, 150V, 0.024ohm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 96A, 150V, 0.024ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXTQ96N15P can be used for catalog matching and distributor lookup.

Power Field-Effect Transistor, 96A I(D), 150V, 0.024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN Product overview: IXTQ96N15P from Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 96A, 150V, 0.024ohm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 96A, 150V, 0.024ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXTQ96N15P can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet

Technical Specifications

  Littelfuse, Inc. ERSAELECTRONICS PTE. LTD.
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number IXTQ96N15P 278-IXTQ96N15P
Product Name 100V - 1200V N-Channel Standard Power MOSFETs N-Channel 96A 150V 0.024ohm MOSFET Transistor
Polarity N-Channel
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