The IXTT6N120 is an N-channel enhancement mode MOSFET rated for 1200 V drain-to-source voltage and 6 A continuous drain current, designed for high-voltage switching applications. It is packaged in a TO-268 case with a drain tab, measuring 20.80 mm to 21.46 mm in length and 15.75 mm to 16.26 mm in width. The device has a maximum on-state resistance of 2.6 Ω at 25 °C and is avalanche rated with an unclamped inductive switching energy of 25 mJ. Operating junction temperature ranges from -55 °C to 150 °C, with a thermal resistance of 0.42 K/W from junction to case. The part meets international standard package dimensions and features a low package inductance design for easy drive and protection.
Trans MOSFET N-CH Si 1.2KV 6A 3-Pin(2+Tab) TO-268 T/R Product overview: IXTT6N120-TRL from Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1.2KV, 6A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 1.2KV, 6A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXTT6N120-TRL can be used for catalog matching and distributor lookup.
| ERSAELECTRONICS PTE. LTD. | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-IXTT6N120-TRL |
| Product Name | 1.2KV 6A MOSFET Transistor |
| MOSFET Operating Mode | Enhancement |
| V(BR)DSS | 1200 volts |
| PD | 300000 milliwatts |
