Littelfuse, Inc. 100V - 1200V N-Channel Standard Power MOSFETs IXTQ36N30P

Description
Polar™ Standard Power MOSFETs are tailored to provide designers with a device solution that offers the best compromise between performance and cost. These devices incorporate the Polar technology platform to achieve low on-state resistances (Rdson). Polar Standard MOSFETs feature low gate charge Qg values, resulting in more efficient switching at all frequencies. This gives the designer the option to operate at higher frequencies, which enables the use of smaller passive components in a variety of load switching designs. The avalanche capabilities of these devices add an additional safeguard against over-voltage transients. Advantages: Easy to mount Space savings High power density International Standard Packages Dynamic dv/dt rating Low RDS(on) and Qg Avalanche Rated Low Package Inductance
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Description
Polar™ Standard Power MOSFETs are tailored to provide designers with a device solution that offers the best compromise between performance and cost. These devices incorporate the Polar technology platform to achieve low on-state resistances (Rdson). Polar Standard MOSFETs feature low gate charge Qg values, resulting in more efficient switching at all frequencies. This gives the designer the option to operate at higher frequencies, which enables the use of smaller passive components in a variety of load switching designs. The avalanche capabilities of these devices add an additional safeguard against over-voltage transients. Advantages: Easy to mount Space savings High power density International Standard Packages Dynamic dv/dt rating Low RDS(on) and Qg Avalanche Rated Low Package Inductance
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Datasheet
Datasheet Summary
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The IXTQ36N30P is an N-channel enhancement mode MOSFET rated for 300 V drain-source voltage and 36 A continuous drain current, designed for high-power switching applications. It is housed in a TO-3P package with a mounting torque of 1.13 Nm. The device features a maximum on-resistance of 110 mΩ at 25°C, an avalanche energy rating of 1.0 J, and unclamped inductive switching capability. Thermal resistance from junction to case is 0.42°C/W. It is avalanche rated, meets IEC 60286-3 for lead soldering, and supports operating junction temperatures from -55°C to 150°C. The package complies with RoHS standards and offers low gate charge and low package inductance for efficient switching.

Datasheet Summary
Powered by GS/AI

The IXTQ36N30P is an N-channel enhancement mode MOSFET rated for 300 V drain-source voltage and 36 A continuous drain current, designed for high-power switching applications. It is housed in a TO-3P package with a mounting torque of 1.13 Nm. The device features a maximum on-resistance of 110 mΩ at 25°C, an avalanche energy rating of 1.0 J, and unclamped inductive switching capability. Thermal resistance from junction to case is 0.42°C/W. It is avalanche rated, meets IEC 60286-3 for lead soldering, and supports operating junction temperatures from -55°C to 150°C. The package complies with RoHS standards and offers low gate charge and low package inductance for efficient switching.

Suppliers

Company
Product
Description
Supplier Links
100V - 1200V N-Channel Standard Power MOSFETs - IXTQ36N30P - Littelfuse, Inc.
Rosemont, IL, United States
100V - 1200V N-Channel Standard Power MOSFETs
IXTQ36N30P
100V - 1200V N-Channel Standard Power MOSFETs IXTQ36N30P
Polar™ Standard Power MOSFETs are tailored to provide designers with a device solution that offers the best compromise between performance and cost. These devices incorporate the Polar technology platform to achieve low on-state resistances (Rdson). Polar Standard MOSFETs feature low gate charge Qg values, resulting in more efficient switching at all frequencies. This gives the designer the option to operate at higher frequencies, which enables the use of smaller passive components in a variety of load switching designs. The avalanche capabilities of these devices add an additional safeguard against over-voltage transients. Advantages: Easy to mount Space savings High power density International Standard Packages Dynamic dv/dt rating Low RDS(on) and Qg Avalanche Rated Low Package Inductance

Polar™ Standard Power MOSFETs are tailored to provide designers with a device solution that offers the best compromise between performance and cost. These devices incorporate the Polar technology platform to achieve low on-state resistances (Rdson). Polar Standard MOSFETs feature low gate charge Qg values, resulting in more efficient switching at all frequencies. This gives the designer the option to operate at higher frequencies, which enables the use of smaller passive components in a variety of load switching designs. The avalanche capabilities of these devices add an additional safeguard against over-voltage transients. Advantages: Easy to mount Space savings High power density International Standard Packages Dynamic dv/dt rating Low RDS(on) and Qg Avalanche Rated Low Package Inductance

Supplier's Site Datasheet
Singapore, Singapore
N-Channel 36A 300V 0.11ohm MOSFET Transistor
278-IXTQ36N30P
N-Channel 36A 300V 0.11ohm MOSFET Transistor 278-IXTQ36N30P
Power Field-Effect Transistor, 36A I(D), 300V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN Product overview: IXTQ36N30P from Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 36A, 300V, 0.11ohm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 36A, 300V, 0.11ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXTQ36N30P can be used for catalog matching and distributor lookup.

Power Field-Effect Transistor, 36A I(D), 300V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN Product overview: IXTQ36N30P from Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 36A, 300V, 0.11ohm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 36A, 300V, 0.11ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXTQ36N30P can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet

Technical Specifications

  Littelfuse, Inc. ERSAELECTRONICS PTE. LTD.
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number IXTQ36N30P 278-IXTQ36N30P
Product Name 100V - 1200V N-Channel Standard Power MOSFETs N-Channel 36A 300V 0.11ohm MOSFET Transistor
Polarity N-Channel
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