Littelfuse, Inc. -50V to -200V P-Channel Power MOSFETs IXTP24P085T

Description
Trench P-Channel MOSFETs are well suited for ‘high side’ switching applications where a simple drive circuit referenced to ground can be employed, avoiding additional ‘high side’ driver circuitry commonly involved when using an N-Channel MOSFET. This enables designers to reduce component count, thereby improving drive circuit simplicity and over-all component cost structure. Furthermore, it allows for the design of a complementary power output stage with a corresponding N-Channel MOSFET, for a power half bridge stage paired with a simple drive circuit. Advantages: Low gate charge resulting in simple drive requirement High power density Fast switching Fast intrinsic diode Low Qg and RDSon Avalanche rated Extended FBSOA International standard packages
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Description
Trench P-Channel MOSFETs are well suited for ‘high side’ switching applications where a simple drive circuit referenced to ground can be employed, avoiding additional ‘high side’ driver circuitry commonly involved when using an N-Channel MOSFET. This enables designers to reduce component count, thereby improving drive circuit simplicity and over-all component cost structure. Furthermore, it allows for the design of a complementary power output stage with a corresponding N-Channel MOSFET, for a power half bridge stage paired with a simple drive circuit. Advantages: Low gate charge resulting in simple drive requirement High power density Fast switching Fast intrinsic diode Low Qg and RDSon Avalanche rated Extended FBSOA International standard packages
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Datasheet
Datasheet Summary
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The IXTP24P085T is a P-channel enhancement mode MOSFET rated for -85 V drain-source voltage and -24 A continuous drain current, designed for high-side switching, push-pull amplifiers, and battery charger applications. It is packaged in a TO-220AB case with a thermal resistance from junction to case of 0.50 °C/W and an avalanche energy rating of 200 mJ. The device features a maximum on-resistance of 65 mΩ at -10 V gate voltage and -12 A drain current, a gate charge of 41 nC, and an extended forward bias safe operating area. It is avalanche rated, includes a fast intrinsic diode, and meets RoHS standards. The operating junction temperature range is -55 °C to +150 °C.

Datasheet Summary
Powered by GS/AI

The IXTP24P085T is a P-channel enhancement mode MOSFET rated for -85 V drain-source voltage and -24 A continuous drain current, designed for high-side switching, push-pull amplifiers, and battery charger applications. It is packaged in a TO-220AB case with a thermal resistance from junction to case of 0.50 °C/W and an avalanche energy rating of 200 mJ. The device features a maximum on-resistance of 65 mΩ at -10 V gate voltage and -12 A drain current, a gate charge of 41 nC, and an extended forward bias safe operating area. It is avalanche rated, includes a fast intrinsic diode, and meets RoHS standards. The operating junction temperature range is -55 °C to +150 °C.

Suppliers

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Product
Description
Supplier Links
-50V to -200V P-Channel Power MOSFETs - IXTP24P085T - Littelfuse, Inc.
Rosemont, IL, United States
-50V to -200V P-Channel Power MOSFETs
IXTP24P085T
-50V to -200V P-Channel Power MOSFETs IXTP24P085T
Trench P-Channel MOSFETs are well suited for ‘high side’ switching applications where a simple drive circuit referenced to ground can be employed, avoiding additional ‘high side’ driver circuitry commonly involved when using an N-Channel MOSFET. This enables designers to reduce component count, thereby improving drive circuit simplicity and over-all component cost structure. Furthermore, it allows for the design of a complementary power output stage with a corresponding N-Channel MOSFET, for a power half bridge stage paired with a simple drive circuit. Advantages: Low gate charge resulting in simple drive requirement High power density Fast switching Fast intrinsic diode Low Qg and RDSon Avalanche rated Extended FBSOA International standard packages

Trench P-Channel MOSFETs are well suited for ‘high side’ switching applications where a simple drive circuit referenced to ground can be employed, avoiding additional ‘high side’ driver circuitry commonly involved when using an N-Channel MOSFET. This enables designers to reduce component count, thereby improving drive circuit simplicity and over-all component cost structure. Furthermore, it allows for the design of a complementary power output stage with a corresponding N-Channel MOSFET, for a power half bridge stage paired with a simple drive circuit. Advantages: Low gate charge resulting in simple drive requirement High power density Fast switching Fast intrinsic diode Low Qg and RDSon Avalanche rated Extended FBSOA International standard packages

Supplier's Site Datasheet
Singapore, Singapore
MOSFET Transistor
278-IXTP24P085T
MOSFET Transistor 278-IXTP24P085T
Power Field-Effect Transistor, Product overview: IXTP24P085T from Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXTP24P085T can be used for catalog matching and distributor lookup.

Power Field-Effect Transistor, Product overview: IXTP24P085T from Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXTP24P085T can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet

Technical Specifications

  Littelfuse, Inc. ERSAELECTRONICS PTE. LTD.
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number IXTP24P085T 278-IXTP24P085T
Product Name -50V to -200V P-Channel Power MOSFETs MOSFET Transistor
Polarity P-Channel
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