Littelfuse, Inc. Power Semiconductors & Control ICs - MOSFETs (Si/SiC) - N-Channel Depletion Mode - Series: Standard - IXTP02N50D IXTP02N50D

Description
Depletion mode MOSFETs, unlike the regular enhancement type MOSFETs, require a negative gate bias to turn off. Consequently they remain on at or above zero gate bias voltage but otherwise have similar MOSFET like characteristics. They are suitable for level shifting, solid state relays, current regulators, and active loads. Normally on operation Linear mode tolerant Internal standard packages UL 94 V-0 Flammability qualified (molding epoxies)
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Description
Depletion mode MOSFETs, unlike the regular enhancement type MOSFETs, require a negative gate bias to turn off. Consequently they remain on at or above zero gate bias voltage but otherwise have similar MOSFET like characteristics. They are suitable for level shifting, solid state relays, current regulators, and active loads. Normally on operation Linear mode tolerant Internal standard packages UL 94 V-0 Flammability qualified (molding epoxies)
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Datasheet
Datasheet Summary
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IXTP02N50D is a normally-on N-channel depletion mode MOSFET designed for applications such as level shifting, solid state relays, and current regulators. It is packaged in a TO-220AB case with a weight of 3.00 g. The device has a drain-source breakdown voltage of 500 V, a continuous drain current of 200 mA at 25°C, and a maximum power dissipation of 25 W. The on-state resistance is specified at a maximum of 30 Ω with a gate-source voltage of -10 V. The gate-source voltage rating is ±20 V continuous and ±30 V transient. Thermal resistance from junction to case is 5.0 °C/W. The part features a rugged polysilicon gate cell structure and fast switching speed. It operates over a junction temperature range of -55 °C to +150 °C.

Datasheet Summary
Powered by GS/AI

IXTP02N50D is a normally-on N-channel depletion mode MOSFET designed for applications such as level shifting, solid state relays, and current regulators. It is packaged in a TO-220AB case with a weight of 3.00 g. The device has a drain-source breakdown voltage of 500 V, a continuous drain current of 200 mA at 25°C, and a maximum power dissipation of 25 W. The on-state resistance is specified at a maximum of 30 Ω with a gate-source voltage of -10 V. The gate-source voltage rating is ±20 V continuous and ±30 V transient. Thermal resistance from junction to case is 5.0 °C/W. The part features a rugged polysilicon gate cell structure and fast switching speed. It operates over a junction temperature range of -55 °C to +150 °C.

Suppliers

Company
Product
Description
Supplier Links
Power Semiconductors & Control ICs - MOSFETs (Si/SiC) - N-Channel Depletion Mode - Series: Standard - IXTP02N50D - IXTP02N50D - Littelfuse, Inc.
Rosemont, IL, United States
Power Semiconductors & Control ICs - MOSFETs (Si/SiC) - N-Channel Depletion Mode - Series: Standard - IXTP02N50D
IXTP02N50D
Power Semiconductors & Control ICs - MOSFETs (Si/SiC) - N-Channel Depletion Mode - Series: Standard - IXTP02N50D IXTP02N50D
Depletion mode MOSFETs, unlike the regular enhancement type MOSFETs, require a negative gate bias to turn off. Consequently they remain on at or above zero gate bias voltage but otherwise have similar MOSFET like characteristics. They are suitable for level shifting, solid state relays, current regulators, and active loads. Normally on operation Linear mode tolerant Internal standard packages UL 94 V-0 Flammability qualified (molding epoxies)

Depletion mode MOSFETs, unlike the regular enhancement type MOSFETs, require a negative gate bias to turn off. Consequently they remain on at or above zero gate bias voltage but otherwise have similar MOSFET like characteristics. They are suitable for level shifting, solid state relays, current regulators, and active loads. Normally on operation Linear mode tolerant Internal standard packages UL 94 V-0 Flammability qualified (molding epoxies)

Supplier's Site Datasheet
Singapore, Singapore
MOSFET Transistor
278-IXTP02N50D
MOSFET Transistor 278-IXTP02N50D
Power Field-Effect Transistor, Product overview: IXTP02N50D from Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXTP02N50D can be used for catalog matching and distributor lookup.

Power Field-Effect Transistor, Product overview: IXTP02N50D from Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXTP02N50D can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet

Technical Specifications

  Littelfuse, Inc. ERSAELECTRONICS PTE. LTD.
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number IXTP02N50D 278-IXTP02N50D
Product Name Power Semiconductors & Control ICs - MOSFETs (Si/SiC) - N-Channel Depletion Mode - Series: Standard - IXTP02N50D MOSFET Transistor
Polarity N-Channel
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