Littelfuse, Inc. 100V - 1200V N-Channel Standard Power MOSFETs IXTP3N100P

Description
Polar™ Standard Power MOSFETs are tailored to provide designers with a device solution that offers the best compromise between performance and cost. These devices incorporate the Polar technology platform to achieve low on-state resistances (Rdson). Polar Standard MOSFETs feature low gate charge Qg values, resulting in more efficient switching at all frequencies. This gives the designer the option to operate at higher frequencies, which enables the use of smaller passive components in a variety of load switching designs. The avalanche capabilities of these devices add an additional safeguard against over-voltage transients. Advantages: Easy to mount Space savings High power density International Standard Packages Dynamic dv/dt rating Low RDS(on) and Qg Avalanche Rated Low Package Inductance
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Description
Polar™ Standard Power MOSFETs are tailored to provide designers with a device solution that offers the best compromise between performance and cost. These devices incorporate the Polar technology platform to achieve low on-state resistances (Rdson). Polar Standard MOSFETs feature low gate charge Qg values, resulting in more efficient switching at all frequencies. This gives the designer the option to operate at higher frequencies, which enables the use of smaller passive components in a variety of load switching designs. The avalanche capabilities of these devices add an additional safeguard against over-voltage transients. Advantages: Easy to mount Space savings High power density International Standard Packages Dynamic dv/dt rating Low RDS(on) and Qg Avalanche Rated Low Package Inductance
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Datasheet
Datasheet Summary
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The IXTP3N100P is an N-channel enhancement mode MOSFET in a TO-220 package, rated for 1000 V drain-source voltage and 3 A continuous drain current at 25°C. It features a maximum on-state resistance of 4.8 Ω at 10 V gate-source voltage and 1.5 A drain current, and is avalanche rated with a single-pulse energy rating of 200 mJ. The device supports a transient gate-source voltage of ±30 V and has a gate charge of 9 nC for gate-source and 13 nC for gate-drain. Thermal resistance from junction to case is 0.50 °C/W. It operates from -55 °C to 150 °C junction temperature and meets RoHS standards. The package is designed for low inductance and easy mounting, suitable for switch-mode and resonant-mode power supplies, DC-DC converters, and motor drives.

Datasheet Summary
Powered by GS/AI

The IXTP3N100P is an N-channel enhancement mode MOSFET in a TO-220 package, rated for 1000 V drain-source voltage and 3 A continuous drain current at 25°C. It features a maximum on-state resistance of 4.8 Ω at 10 V gate-source voltage and 1.5 A drain current, and is avalanche rated with a single-pulse energy rating of 200 mJ. The device supports a transient gate-source voltage of ±30 V and has a gate charge of 9 nC for gate-source and 13 nC for gate-drain. Thermal resistance from junction to case is 0.50 °C/W. It operates from -55 °C to 150 °C junction temperature and meets RoHS standards. The package is designed for low inductance and easy mounting, suitable for switch-mode and resonant-mode power supplies, DC-DC converters, and motor drives.

Suppliers

Company
Product
Description
Supplier Links
100V - 1200V N-Channel Standard Power MOSFETs - IXTP3N100P - Littelfuse, Inc.
Rosemont, IL, United States
100V - 1200V N-Channel Standard Power MOSFETs
IXTP3N100P
100V - 1200V N-Channel Standard Power MOSFETs IXTP3N100P
Polar™ Standard Power MOSFETs are tailored to provide designers with a device solution that offers the best compromise between performance and cost. These devices incorporate the Polar technology platform to achieve low on-state resistances (Rdson). Polar Standard MOSFETs feature low gate charge Qg values, resulting in more efficient switching at all frequencies. This gives the designer the option to operate at higher frequencies, which enables the use of smaller passive components in a variety of load switching designs. The avalanche capabilities of these devices add an additional safeguard against over-voltage transients. Advantages: Easy to mount Space savings High power density International Standard Packages Dynamic dv/dt rating Low RDS(on) and Qg Avalanche Rated Low Package Inductance

Polar™ Standard Power MOSFETs are tailored to provide designers with a device solution that offers the best compromise between performance and cost. These devices incorporate the Polar technology platform to achieve low on-state resistances (Rdson). Polar Standard MOSFETs feature low gate charge Qg values, resulting in more efficient switching at all frequencies. This gives the designer the option to operate at higher frequencies, which enables the use of smaller passive components in a variety of load switching designs. The avalanche capabilities of these devices add an additional safeguard against over-voltage transients. Advantages: Easy to mount Space savings High power density International Standard Packages Dynamic dv/dt rating Low RDS(on) and Qg Avalanche Rated Low Package Inductance

Supplier's Site Datasheet
Singapore, Singapore
N-Channel 3A 1000V 4.8ohm MOSFET Transistor
278-IXTP3N100P
N-Channel 3A 1000V 4.8ohm MOSFET Transistor 278-IXTP3N100P
Power Field-Effect Transistor, 3A I(D), 1000V, 4.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN Product overview: IXTP3N100P from Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 3A, 1000V, 4.8ohm, TO-220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 3A, 1000V, 4.8ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXTP3N100P can be used for catalog matching and distributor lookup.

Power Field-Effect Transistor, 3A I(D), 1000V, 4.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN Product overview: IXTP3N100P from Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 3A, 1000V, 4.8ohm, TO-220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 3A, 1000V, 4.8ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXTP3N100P can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet

Technical Specifications

  Littelfuse, Inc. ERSAELECTRONICS PTE. LTD.
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number IXTP3N100P 278-IXTP3N100P
Product Name 100V - 1200V N-Channel Standard Power MOSFETs N-Channel 3A 1000V 4.8ohm MOSFET Transistor
Polarity N-Channel
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