Littelfuse, Inc. Power Semiconductors & Control ICs - MOSFETs (Si/SiC) - N-Channel Ultra Junction - Series: X4-Class - IXTT240N15X4HV IXTT240N15X4HV

Description
These devices are developed using a charge compensation principle and proprietary process technology, resulting in Power MOSFETs with significantly reduced resistance RDS(on) and gate charge Qg. A low on-state resistance reduces the conduction losses; it also lowers the energy stored in the output capacitance, minimizing the switching losses. A low gate charge results in higher efficiency at light loads as well as lower gate drive requirements. In addition, these MOSFETs are avalanche rated and exhibit a superior dv/dt performance. Also due to the positive temperature coefficient of their on-state resistance, they can be operated in parallel to meet higher current requirements. Low on-resistance RDS(ON) and gate charge Qg dv/dt ruggedness Avalanche capability International standard packages
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Description
These devices are developed using a charge compensation principle and proprietary process technology, resulting in Power MOSFETs with significantly reduced resistance RDS(on) and gate charge Qg. A low on-state resistance reduces the conduction losses; it also lowers the energy stored in the output capacitance, minimizing the switching losses. A low gate charge results in higher efficiency at light loads as well as lower gate drive requirements. In addition, these MOSFETs are avalanche rated and exhibit a superior dv/dt performance. Also due to the positive temperature coefficient of their on-state resistance, they can be operated in parallel to meet higher current requirements. Low on-resistance RDS(ON) and gate charge Qg dv/dt ruggedness Avalanche capability International standard packages
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Datasheet
Datasheet Summary
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The IXTT240N15X4HV is an N-channel enhancement mode power MOSFET designed for high-power switching applications such as switch-mode and resonant-mode power supplies, DC-DC converters, PFC circuits, and motor drives. It is packaged in a TO-268HV case with a weight of 4 g and features an avalanche rating, low on-resistance of 4.4 mΩ at 25°C, and a continuous drain current of 240 A at 25°C. The device operates with a maximum drain-source voltage of 150 V and a junction temperature range of -55°C to 175°C. It meets standards for international standard packages and has a thermal resistance from junction to case of 0.16 °C/W. The gate charge is 195 nC, and the input capacitance is 8900 pF at 25 V. Device switching performance and thermal reliability are optimized for high-power density applications.

Datasheet Summary
Powered by GS/AI

The IXTT240N15X4HV is an N-channel enhancement mode power MOSFET designed for high-power switching applications such as switch-mode and resonant-mode power supplies, DC-DC converters, PFC circuits, and motor drives. It is packaged in a TO-268HV case with a weight of 4 g and features an avalanche rating, low on-resistance of 4.4 mΩ at 25°C, and a continuous drain current of 240 A at 25°C. The device operates with a maximum drain-source voltage of 150 V and a junction temperature range of -55°C to 175°C. It meets standards for international standard packages and has a thermal resistance from junction to case of 0.16 °C/W. The gate charge is 195 nC, and the input capacitance is 8900 pF at 25 V. Device switching performance and thermal reliability are optimized for high-power density applications.

Suppliers

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Product
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Supplier Links
Power Semiconductors & Control ICs - MOSFETs (Si/SiC) - N-Channel Ultra Junction - Series: X4-Class - IXTT240N15X4HV - IXTT240N15X4HV - Littelfuse, Inc.
Rosemont, IL, United States
Power Semiconductors & Control ICs - MOSFETs (Si/SiC) - N-Channel Ultra Junction - Series: X4-Class - IXTT240N15X4HV
IXTT240N15X4HV
Power Semiconductors & Control ICs - MOSFETs (Si/SiC) - N-Channel Ultra Junction - Series: X4-Class - IXTT240N15X4HV IXTT240N15X4HV
These devices are developed using a charge compensation principle and proprietary process technology, resulting in Power MOSFETs with significantly reduced resistance RDS(on) and gate charge Qg. A low on-state resistance reduces the conduction losses; it also lowers the energy stored in the output capacitance, minimizing the switching losses. A low gate charge results in higher efficiency at light loads as well as lower gate drive requirements. In addition, these MOSFETs are avalanche rated and exhibit a superior dv/dt performance. Also due to the positive temperature coefficient of their on-state resistance, they can be operated in parallel to meet higher current requirements. Low on-resistance RDS(ON) and gate charge Qg dv/dt ruggedness Avalanche capability International standard packages

These devices are developed using a charge compensation principle and proprietary process technology, resulting in Power MOSFETs with significantly reduced resistance RDS(on) and gate charge Qg. A low on-state resistance reduces the conduction losses; it also lowers the energy stored in the output capacitance, minimizing the switching losses. A low gate charge results in higher efficiency at light loads as well as lower gate drive requirements. In addition, these MOSFETs are avalanche rated and exhibit a superior dv/dt performance. Also due to the positive temperature coefficient of their on-state resistance, they can be operated in parallel to meet higher current requirements. Low on-resistance RDS(ON) and gate charge Qg dv/dt ruggedness Avalanche capability International standard packages

Supplier's Site Datasheet
Singapore, Singapore
MOSFET Transistor
278-IXTT240N15X4HV
MOSFET Transistor 278-IXTT240N15X4HV
X4-Class Power MOSFET Product overview: IXTT240N15X4HV from Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXTT240N15X4HV can be used for catalog matching and distributor lookup.

X4-Class Power MOSFET Product overview: IXTT240N15X4HV from Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXTT240N15X4HV can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet

Technical Specifications

  Littelfuse, Inc. ERSAELECTRONICS PTE. LTD.
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number IXTT240N15X4HV 278-IXTT240N15X4HV
Product Name Power Semiconductors & Control ICs - MOSFETs (Si/SiC) - N-Channel Ultra Junction - Series: X4-Class - IXTT240N15X4HV MOSFET Transistor
Polarity N-Channel
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