Littelfuse, Inc. 55V - 300V Trench Gate Power MOSFETs with HiPerFET™ Options IXTQ200N10T

Description
Trench Gate Power MOSFETs are ideally suited for low voltage/ high current applications, requiring an exceedingly low RDS(on), thus guaranteeing very low power Dissipation. This, combined with wide ranging operating junction temperature from -40 °C to 175 °C make them suitable candidates for automobile applications and other similar demanding applications in harsh environments. Advantages: Easy to Mount Space Savings High power density International Standard Packages Low RDS(ON) Avalanche rated High Current Handling Capability Fast Intrinsic Rectifier
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Description
Trench Gate Power MOSFETs are ideally suited for low voltage/ high current applications, requiring an exceedingly low RDS(on), thus guaranteeing very low power Dissipation. This, combined with wide ranging operating junction temperature from -40 °C to 175 °C make them suitable candidates for automobile applications and other similar demanding applications in harsh environments. Advantages: Easy to Mount Space Savings High power density International Standard Packages Low RDS(ON) Avalanche rated High Current Handling Capability Fast Intrinsic Rectifier
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Datasheet
Datasheet Summary
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The IXTQ200N10T is an N-channel enhancement mode MOSFET in a TO-3P package, designed for high-current switching applications such as automotive motor drives, ABS systems, and DC/DC converters. It has a drain-source voltage rating of 100 V and a continuous drain current of 200 A at 25°C, with a pulsed drain current of 500 A. The device features a maximum on-state resistance of 5.5 mΩ at 10 V gate-source voltage and 50 A drain current, and is avalanche rated with an energy rating of 1.5 J. Thermal resistance from junction to case is 0.27 °C/W, and it operates over a junction temperature range of -55°C to 175°C. The package weighs 5.5 g and meets international standard packaging requirements. The IXTQ200N10T is part of a series with identical features across variants, including low RDS(on), high power density, and 175°C operational capability.

Datasheet Summary
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The IXTQ200N10T is an N-channel enhancement mode MOSFET in a TO-3P package, designed for high-current switching applications such as automotive motor drives, ABS systems, and DC/DC converters. It has a drain-source voltage rating of 100 V and a continuous drain current of 200 A at 25°C, with a pulsed drain current of 500 A. The device features a maximum on-state resistance of 5.5 mΩ at 10 V gate-source voltage and 50 A drain current, and is avalanche rated with an energy rating of 1.5 J. Thermal resistance from junction to case is 0.27 °C/W, and it operates over a junction temperature range of -55°C to 175°C. The package weighs 5.5 g and meets international standard packaging requirements. The IXTQ200N10T is part of a series with identical features across variants, including low RDS(on), high power density, and 175°C operational capability.

Suppliers

Company
Product
Description
Supplier Links
55V - 300V Trench Gate Power MOSFETs with HiPerFET™ Options - IXTQ200N10T - Littelfuse, Inc.
Rosemont, IL, United States
55V - 300V Trench Gate Power MOSFETs with HiPerFET™ Options
IXTQ200N10T
55V - 300V Trench Gate Power MOSFETs with HiPerFET™ Options IXTQ200N10T
Trench Gate Power MOSFETs are ideally suited for low voltage/ high current applications, requiring an exceedingly low RDS(on), thus guaranteeing very low power Dissipation. This, combined with wide ranging operating junction temperature from -40 °C to 175 °C make them suitable candidates for automobile applications and other similar demanding applications in harsh environments. Advantages: Easy to Mount Space Savings High power density International Standard Packages Low RDS(ON) Avalanche rated High Current Handling Capability Fast Intrinsic Rectifier

Trench Gate Power MOSFETs are ideally suited for low voltage/ high current applications, requiring an exceedingly low RDS(on), thus guaranteeing very low power Dissipation. This, combined with wide ranging operating junction temperature from -40 °C to 175 °C make them suitable candidates for automobile applications and other similar demanding applications in harsh environments. Advantages: Easy to Mount Space Savings High power density International Standard Packages Low RDS(ON) Avalanche rated High Current Handling Capability Fast Intrinsic Rectifier

Supplier's Site Datasheet
Singapore, Singapore
MOSFET Transistor
278-IXTQ200N10T
MOSFET Transistor 278-IXTQ200N10T
Power Field-Effect Transistor, Product overview: IXTQ200N10T from Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXTQ200N10T can be used for catalog matching and distributor lookup.

Power Field-Effect Transistor, Product overview: IXTQ200N10T from Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXTQ200N10T can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet

Technical Specifications

  Littelfuse, Inc. ERSAELECTRONICS PTE. LTD.
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number IXTQ200N10T 278-IXTQ200N10T
Product Name 55V - 300V Trench Gate Power MOSFETs with HiPerFET™ Options MOSFET Transistor
Polarity N-Channel
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