Littelfuse, Inc. 55V - 300V Trench Gate Power MOSFETs with HiPerFET™ Options IXTQ86N20T

Description
Trench Gate Power MOSFETs are ideally suited for low voltage/ high current applications, requiring an exceedingly low RDS(on), thus guaranteeing very low power Dissipation. This, combined with wide ranging operating junction temperature from -40 °C to 175 °C make them suitable candidates for automobile applications and other similar demanding applications in harsh environments. Advantages: Easy to Mount Space Savings High power density International Standard Packages Low RDS(ON) Avalanche rated High Current Handling Capability Fast Intrinsic Rectifier
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Description
Trench Gate Power MOSFETs are ideally suited for low voltage/ high current applications, requiring an exceedingly low RDS(on), thus guaranteeing very low power Dissipation. This, combined with wide ranging operating junction temperature from -40 °C to 175 °C make them suitable candidates for automobile applications and other similar demanding applications in harsh environments. Advantages: Easy to Mount Space Savings High power density International Standard Packages Low RDS(ON) Avalanche rated High Current Handling Capability Fast Intrinsic Rectifier
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Datasheet
Datasheet Summary
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IXTQ86N20T is an N-channel enhancement mode MOSFET designed for high-speed power switching in applications such as DC-DC converters, battery chargers, and AC motor drives. It is packaged in a TO-3P case with a maximum drain-source voltage of 200 V and a continuous drain current of 86 A at 25°C. The device has a maximum on-state resistance of 33 mΩ at 10 V gate voltage and 43 A drain current, and is avalanche rated with an energy rating of 1 J. It features a fast intrinsic rectifier, low gate charge, and a junction temperature range of -55°C to 175°C. The TO-3P package has a thermal resistance from junction to case of 0.25 °C/W.

Datasheet Summary
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IXTQ86N20T is an N-channel enhancement mode MOSFET designed for high-speed power switching in applications such as DC-DC converters, battery chargers, and AC motor drives. It is packaged in a TO-3P case with a maximum drain-source voltage of 200 V and a continuous drain current of 86 A at 25°C. The device has a maximum on-state resistance of 33 mΩ at 10 V gate voltage and 43 A drain current, and is avalanche rated with an energy rating of 1 J. It features a fast intrinsic rectifier, low gate charge, and a junction temperature range of -55°C to 175°C. The TO-3P package has a thermal resistance from junction to case of 0.25 °C/W.

Suppliers

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Supplier Links
55V - 300V Trench Gate Power MOSFETs with HiPerFET™ Options - IXTQ86N20T - Littelfuse, Inc.
Rosemont, IL, United States
55V - 300V Trench Gate Power MOSFETs with HiPerFET™ Options
IXTQ86N20T
55V - 300V Trench Gate Power MOSFETs with HiPerFET™ Options IXTQ86N20T
Trench Gate Power MOSFETs are ideally suited for low voltage/ high current applications, requiring an exceedingly low RDS(on), thus guaranteeing very low power Dissipation. This, combined with wide ranging operating junction temperature from -40 °C to 175 °C make them suitable candidates for automobile applications and other similar demanding applications in harsh environments. Advantages: Easy to Mount Space Savings High power density International Standard Packages Low RDS(ON) Avalanche rated High Current Handling Capability Fast Intrinsic Rectifier

Trench Gate Power MOSFETs are ideally suited for low voltage/ high current applications, requiring an exceedingly low RDS(on), thus guaranteeing very low power Dissipation. This, combined with wide ranging operating junction temperature from -40 °C to 175 °C make them suitable candidates for automobile applications and other similar demanding applications in harsh environments. Advantages: Easy to Mount Space Savings High power density International Standard Packages Low RDS(ON) Avalanche rated High Current Handling Capability Fast Intrinsic Rectifier

Supplier's Site Datasheet
Singapore, Singapore
200V 86A MOSFET Transistor
278-IXTQ86N20T
200V 86A MOSFET Transistor 278-IXTQ86N20T
Trans MOSFET N-CH 200V 86A 3-Pin(3+Tab) TO-3P Product overview: IXTQ86N20T from Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 200V, 86A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 200V, 86A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXTQ86N20T can be used for catalog matching and distributor lookup.

Trans MOSFET N-CH 200V 86A 3-Pin(3+Tab) TO-3P Product overview: IXTQ86N20T from Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 200V, 86A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 200V, 86A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXTQ86N20T can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet

Technical Specifications

  Littelfuse, Inc. ERSAELECTRONICS PTE. LTD.
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number IXTQ86N20T 278-IXTQ86N20T
Product Name 55V - 300V Trench Gate Power MOSFETs with HiPerFET™ Options 200V 86A MOSFET Transistor
Polarity N-Channel
Package Type TO-3; TO-3P
MOSFET Operating Mode Enhancement
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