Littelfuse, Inc. Power Semiconductors & Control ICs - MOSFETs (Si/SiC) - N-Channel Depletion Mode - Series: Standard - IXTU01N100D IXTU01N100D

Description
Depletion mode MOSFETs, unlike the regular enhancement type MOSFETs, require a negative gate bias to turn off. Consequently they remain on at or above zero gate bias voltage but otherwise have similar MOSFET like characteristics. They are suitable for level shifting, solid state relays, current regulators, and active loads. Normally on operation Linear mode tolerant Internal standard packages UL 94 V-0 Flammability qualified (molding epoxies)
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Description
Depletion mode MOSFETs, unlike the regular enhancement type MOSFETs, require a negative gate bias to turn off. Consequently they remain on at or above zero gate bias voltage but otherwise have similar MOSFET like characteristics. They are suitable for level shifting, solid state relays, current regulators, and active loads. Normally on operation Linear mode tolerant Internal standard packages UL 94 V-0 Flammability qualified (molding epoxies)
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Datasheet
Datasheet Summary
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The IXTU01N100D is a normally-on N-channel depletion mode MOSFET in a TO-251 package, rated for 1000 V drain-source voltage and 400 mA continuous drain current. It has a maximum RDS(on) of 80 Ω at 25 °C and a power dissipation of 25 W. The device features a low RDS(on), fast switching speed, and a rugged polysilicon gate structure. Operating junction temperature ranges from -55 °C to 150 °C. The molded epoxy meets UL 94 V-0 flammability rating. The TO-251 package has a weight of 0.40 g and dimensions consistent with industry-standard mounting. Thermal resistance from junction to case is 1.6 °C/W. The gate-source voltage is rated for continuous ±20 V and transient ±30 V. Applications include level shifting, triggers, solid state relays, and current regulators.

Datasheet Summary
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The IXTU01N100D is a normally-on N-channel depletion mode MOSFET in a TO-251 package, rated for 1000 V drain-source voltage and 400 mA continuous drain current. It has a maximum RDS(on) of 80 Ω at 25 °C and a power dissipation of 25 W. The device features a low RDS(on), fast switching speed, and a rugged polysilicon gate structure. Operating junction temperature ranges from -55 °C to 150 °C. The molded epoxy meets UL 94 V-0 flammability rating. The TO-251 package has a weight of 0.40 g and dimensions consistent with industry-standard mounting. Thermal resistance from junction to case is 1.6 °C/W. The gate-source voltage is rated for continuous ±20 V and transient ±30 V. Applications include level shifting, triggers, solid state relays, and current regulators.

Suppliers

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Product
Description
Supplier Links
Power Semiconductors & Control ICs - MOSFETs (Si/SiC) - N-Channel Depletion Mode - Series: Standard - IXTU01N100D - IXTU01N100D - Littelfuse, Inc.
Rosemont, IL, United States
Power Semiconductors & Control ICs - MOSFETs (Si/SiC) - N-Channel Depletion Mode - Series: Standard - IXTU01N100D
IXTU01N100D
Power Semiconductors & Control ICs - MOSFETs (Si/SiC) - N-Channel Depletion Mode - Series: Standard - IXTU01N100D IXTU01N100D
Depletion mode MOSFETs, unlike the regular enhancement type MOSFETs, require a negative gate bias to turn off. Consequently they remain on at or above zero gate bias voltage but otherwise have similar MOSFET like characteristics. They are suitable for level shifting, solid state relays, current regulators, and active loads. Normally on operation Linear mode tolerant Internal standard packages UL 94 V-0 Flammability qualified (molding epoxies)

Depletion mode MOSFETs, unlike the regular enhancement type MOSFETs, require a negative gate bias to turn off. Consequently they remain on at or above zero gate bias voltage but otherwise have similar MOSFET like characteristics. They are suitable for level shifting, solid state relays, current regulators, and active loads. Normally on operation Linear mode tolerant Internal standard packages UL 94 V-0 Flammability qualified (molding epoxies)

Supplier's Site Datasheet
Singapore, Singapore
MOSFET Transistor
278-IXTU01N100D
MOSFET Transistor 278-IXTU01N100D
Power Field-Effect Transistor, Product overview: IXTU01N100D from Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXTU01N100D can be used for catalog matching and distributor lookup.

Power Field-Effect Transistor, Product overview: IXTU01N100D from Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXTU01N100D can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet

Technical Specifications

  Littelfuse, Inc. ERSAELECTRONICS PTE. LTD.
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number IXTU01N100D 278-IXTU01N100D
Product Name Power Semiconductors & Control ICs - MOSFETs (Si/SiC) - N-Channel Depletion Mode - Series: Standard - IXTU01N100D MOSFET Transistor
Polarity N-Channel
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