IRHYB9A7234CM is a radiation-hardened, N-channel power MOSFET designed for space applications, featuring a tabless TO-257AA package with a hermetically sealed ceramic housing and electrically isolated case. It has a drain-to-source breakdown voltage of 250V, a continuous drain current of 17A at 25°C, and a maximum on-state resistance of 110mΩ at 12V gate drive. The device supports a total gate charge of 34nC and operates with a junction temperature range from -55°C to +150°C. It is qualified under MIL-PRF-19500, hardened against total ionizing dose up to 100 krad(Si), and characterized for single event effects up to 88.6 MeV·cm²/mg. ESD performance meets MIL-STD-750, Method 1020, Class 2.
Rad hard, 250V, 17A, single, N-channel MOSFET, R9 in a TO-257AA Low Ohmic package - TO-257AA Low Ohmic, 100 krad(Si) TID, COTS
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| Infineon Technologies AG | |
|---|---|
| Product Category | Power MOSFET |
| Product Number | IRHYB9A7234CM |
| Product Name | High Reliability - Space - Power - Rad hard MOSFETs - N-channel rad hard power MOSFETs - IRHYB9A7234CM |
| Polarity | N-Channel; N |