The JANTXV2N6784 is a hermetically sealed, N-channel HEXFET® power MOSFET rated for 200V drain-to-source voltage and designed for high-reliability applications such as switching power supplies and pulse circuits. It is packaged in a TO-205AF (TO-39) case with a typical weight of 0.98 g. The device supports a continuous drain current of 2.25 A at 25°C and 1.50 A at 100°C, with a maximum power dissipation of 15 W and a junction-to-case thermal resistance of 8.33°C/W. It is rated for repetitive avalanche energy of 1.5 mJ and a peak diode recovery dv/dt of 5.0 V/ns. The part meets MIL-PRF-19500/556 and MIL-STD-750 Class 1A ESD requirements.
200V Single N-Channel Hi-Rel MOSFET in a TO-205AF package - A JANTXV2N6784 with Hermetic Packaging
Benefits
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| Infineon Technologies AG | |
|---|---|
| Product Category | Power MOSFET |
| Product Number | JANTXV2N6784 |
| Product Name | High Reliability - Defense - Power - HiRel MOSFETs - Single channel high reliability power MOSFETs - JANTXV2N6784 |
| Polarity | N-Channel; N |
